Simple Gain Model of Group III-V Semiconductor-based Laser Diode

Abhishek Saha; Vedatrayee Chakraborty

doi:10.37591/rtecs.v7i3.5402

Abstract

In these days, a layer of low bandgap material is sandwiched between two high bandgap layers.Most commonly-used pair of materials is gallium arsenide (GaAs) with aluminium galliumarsenide (AlGaAs) and Indium Phosphide (InP) with Indium gallium arsenide phosphide(InGaAsP) laser. A heterostructure is the junctions between different bandgap materials. Here,two such junctions are present, hence it is called the name "double heterostructure laser" orDH laser. The kind of laser diode may be referred to as a homojunction laser, for contrast withthese more popular devices. In this work a Group III-V based laser diode structure is chosen.Material of the active region is InP/InGaAsP. The Laser structure is grown with the help of thedevice simulator, Silvaco Atlas, step by Step. The Mesh analysis is done with this simulator. Theconcentration Profile, Band structure, Potential profile are studied through this work. And,furthermore, the Laser current and Power output is studied thoroughly. An improvement is donewith the strip geometry laser model to obtain better result. With that structure a better anodecurrent and a better laser output power is obtained with same anode bias. For much loweranode bias a comparable gain is also obtained with this structure.