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Simple Gain Model of Group III-V Semiconductor-based Laser DiodeBy Abhishek Saha, Vedatrayee Chakraborty
Abstract: In these days, a layer of low bandgap material is sandwiched between two high bandgap layers.Most commonly-used pair of materials is gallium arsenide (GaAs) with aluminium galliumarsenide (AlGaAs) and Indium Phosphide (InP) with Indium gallium arsenide phosphide(InGaAsP) laser. A heterostructure is the junctions between different bandgap materials. Here,two such junctions are present, hence it is called the name "double heterostructure laser" orDH laser. The kind of laser diode may be …
Published in Recent Trends in Electronics Communication Systems · Vol. 7, Issue 3, 2020 · pp. 9–27 Read article →