STM Journals Peer-reviewed research from Consortium e-Learning Network

Journal of VLSI Design Tools and Technology

Switching Loss Calculation of Power MOSFET using the Estimation Technique

  1. Soumya Sen
  2. Souvik Saha
  3. Angshuman Khan
  4. Rajeev Arya

Abstract

An accurate analytical model is very important to measure the switching losses of PowerMOSFET. The perfect estimation of Power MOSFET switching loss is very difficult to predictthe efficiency of the power electronics circuit. This paper investigates the basic internalphysics of the Power MOSFET device and proposed the best possible analytical model tocalculate the power loss. The pre-existing widely accepted power loss calculation method isfound to be useless and inaccurate. In addition, the result of the pre-existing method isoverestimated to apply approximating switching time. This paper focused on new chargeparameters specification and switching time estimation technique to measure less erroneousswitching losses of Power MOSFET.Keywords: DESSIS, Estimation technique, Power MOSFET, Switching loss, Sabre RD
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