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Journal of Semiconductor Devices and Circuits

Advances and Challenges in the Development of High-performance Silicon Carbide (SiC) Power Devices

  1. Abhishek Chaurasiya

Abstract

Due to its distinct features, silicon carbide (SiC), a wide-bandgap semiconductor material, has attracted a lot of attention lately. SiC has superior electrical characteristics compared to silicon, making it an attractive material for high-performance power electronic devices. SiC-based devices can operate at higher temperatures, higher voltages, and higher switching frequencies, which can result in increased power density and efficiency. Recent advances in SiC device technology have led to the development of high-performance SiC power devices such as SiC MOSFETs, SiCSchottky diodes, and SiC JFETs. These devices have demonstrated significant improvements in power density, efficiency, and reliability compared to their silicon counterparts. SiC MOSFETs have demonstrated outstanding performance in a variety of electric car, renewable energy system, and motor drive applications. SiCSchottky diodes have shown improved efficiency and lower reverse recovery losses in power factor correction circuits and switching power supplies. SiC JFETs have shown promising results in high-voltage and high-temperature applications such as power distribution systems and aerospace applications. However, the development of SiC power devices also poses significant challenges. The high cost of SiC material and manufacturing procedures is one of the major issues. This can limit the widespread adoption of SiC devices in commercial applications. Another challenge is the issue of reliability and lifetime of SiC devices. SiC devices are susceptible to defects and degradation, which can affect their performance and reliability over time. To address these challenges, ongoing research is focused on developing new manufacturing processes to reduce costs and improve device performance and reliability. In addition to the challenges in manufacturing and reliability, SiC power devices also face challenges in terms of integration and standardization. Integration of SiC devices with existing power electronics systems can be complex, requiring significant changes to system design and control. To guarantee compatibility and interoperability between different manufacturers and applications, SiC devices and their packaging must be standardised.

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