Emerging applications
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Advances and Challenges in the Development of High-performance Silicon Carbide (SiC) Power Devices
Abstract: Due to its distinct features, silicon carbide (SiC), a wide-bandgap semiconductor material, has attracted a lot of attention lately. SiC has superior electrical characteristics compared to silicon, making it an attractive material for high-performance power electronic devices. SiC-based devices can operate at higher temperatures, higher voltages, and higher switching frequencies, which can result in increased power density and efficiency. Recent advances in SiC device technology have led to the development …
Published in Journal of Semiconductor Devices and Circuits · Vol. 9, Issue 3, 2022 · pp. 15–20 Read article