Study and Analysis on Multi-gate MOSFET Design

Kamlesh Kumar Singh; Nilesh Yadav

doi:10.37591/josdc.v7i1.3988

Abstract

AbstractMulti-gate MOSFET is the emerging technology that is used in the area of low-power VLSI design. Multi-gate devices provide much better advantages over conventional MOSFET. As less power dissipation, decrease size, and more operational value could be obtained. Multi-gate MOSFET devices also reduce cost of production. Thus, design of electronics devices based on multi-gate technology is beneficial in today’s requirement. Basic MOSFET due to its reduction in size shows short channel effects. In multi-gate MOSFET, these effects are decreased and better control over the channel is observed. In this paper, we have introduced multi-gate MOSFET and few devices, we have also done simulation of these designs and done their analysis too. Simple MOSFET is drawn on PSPICE in order to know the difference between the characteristics of multi-gate MOSFET and simple CMOS MOSFET. The transient response of the drawn circuits is studied and evaluated.Keywords: Multi-gate, PSPICE, CMOS, simulation, AC analysisCite this ArticleNilesh Yadav, Kamlesh Kumar Singh. Study and Analysis on Multi-gate MOSFET Design. Journal of Semiconductor Devices and Circuits. 2020; 7(1): 1–7p.