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215 articles for “device characteristic”
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An Efficient LoRa-Enabled Fault Detection Using Self-Powered IoT Device
Abstract: This study describes a revolutionary internet of things (IoT) solution for effective defect detection in a variety of applications. By utilizing an IoT device that generates energy from the surroundings, the suggested solution gets around the drawbacks of conventional battery-operated gadgets. The suggested approach makes use of a self-sustaining IoT gadget that can capture energy from the surroundings to get beyond the drawbacks of conventional battery-powered IoT devices. Longer functioning …
Published in Journal of Microcontroller Engineering and Applications · Vol. 12, Issue 1, 2025 · pp. 1–13 Read article
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Electrical Characteristics of Nanoelectronic Double-Heterojunction High Electron Mobility Transistors
Abstract: AbstractIn this work, a maximum drain current of 554 mA is achieved by the simulated structures of double-heterojunction HEMTs using the SILVACO-ATLAS software tool. The drain current is found to be higher at shorter gate length and at larger aluminium mole fraction. The drain current is also higher at larger thickness of AlGaN barrier layer and at larger doping concentration of AlGaN barrier layer.In this work, the formation of 2-DEG …
Published in Journal of Semiconductor Devices and Circuits · Vol. 7, Issue 1, 2020 · pp. 18–28 Read article
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Modeling and Simulation of ZnO/Si Hetreojunction Photodetector for Optical Communication
Abstract: AbstractIn this work, we present numerical simulation and modeling of ZnO/Si Heterojunction photodetectors. We analyze the performance of ZnO/Si Heterojunction photodetectors using commercial device simulation software ATLAS from Silvaco international. Device structure has been created using ATLAS and its electrical and optical characteristics has been simulated using ATLAS. Main figure of merits like dark current, photocurrent, spectral response and quantum efficiency has been extracted.Keywords: ZnO/Si, Heterojunction Photodetector, Silvaco Deckbuild software, …
Published in Trends in Opto-electro & Optical Communication · Vol. 9, Issue 3, 2019 · pp. 19–27 Read article
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Design of Linear Quadratic Optimal Regulator for Nanopositioning System
Abstract: One of the most important requirement of nanotechnology is precision control and manipulation of devices and materials at nanoscale i.e., nanopositioning. In this paper, open loop characteristics of the non minimum phase nanopositioning system such as poles and zeros location, controllability, observability are investigated. To improve the system characteristics feedback controllers are used. The key of the controller is to design a system with good time response characteristics as well …
Published in Journal of Nanoscience, NanoEngineering & Applications · Vol. 2, Issue 2, 2012 · pp. 12–27 Read article
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Industrial Applications of Radiation
Abstract: In the past 50 years, radiation has found ever increasing use in medicine, industry, archeology, and agriculture. Such applications depend on either the unique characteristics of radioisotopes or the radiation produced by various nuclear and atomic devices. The ingenuity of nuclear technology applications developed over the past half century is extraordinary. Since radiation touches every aspect of our lives, it is in fact, responsible for our lives; it is essential …
Published in Research and Reviews : A Journal of Biotechnology · Vol. 11, Issue 2, 2021 · pp. 33–47 Read article
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Role of Reinforcement Learning in Improvement of Semiconductor Doping
Abstract: The semiconductor industry faces increasing challenges in achieving optimal doping profiles as device dimensions shrink and performance requirements intensify. Traditional doping optimization methods, while effective, often struggle with the complex, multi-dimensional parameter spaces characteristic of modern semiconductor manufacturing. This study explores the transformative role of reinforcement learning (RL) in improving semiconductor doping processes, examining how RL algorithms can autonomously optimize doping parameters to enhance device performance, reduce manufacturing costs, and …
Published in Journal of Semiconductor Devices and Circuits · Vol. 12, Issue 2, 2025 · pp. 23–34 Read article
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Physics of Semiconductors and Electronic Circuits
Abstract: This study talks about the basic ideas behind semiconductor physics and how important they are for making and running modern electronic circuits. It starts with a look at intrinsic and extrinsic semiconductors, going into how charge carriers move, energy band theory, and how doping affects how well the electricity flows. Next, the conversation turns to semiconductor devices like diodes, bipolar junction transistors (BJTs), and field-effect transistors (FETs). The focus is …
Published in Journal of Semiconductor Devices and Circuits · Vol. 12, Issue 2, 2025 · pp. 9–17 Read article
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Enhancing Peptic Ulcer Therapy: Innovations in Mucoadhesive Drug Delivery
Abstract: Peptic ulcer disease is still a sincere gastrointestinal demand makes medication administration difficult because of the harsh and changing stomach environment. This paper investigates the potential of using mucoadhesive drug delivery devices to improve the accuracy and effectiveness of peptic ulcer therapies. Due to the inherent characteristics of mucoadhesive drug delivery systems, localized and sustained drug release is made possible by their extended contact and adherence to the gastrointestinal tract's …
Published in Trends in Drug Delivery · Vol. 11, Issue 1, 2024 · pp. 62–76 Read article
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Performance Evaluation of Hybrid Polymer Composite Materials for Electromagnetic Interference Shielding in Flexible and Wearable Electronic Devices
Abstract: Wearable electronic devices require novel hybrid polymer composites that offer flexible, lightweight and highly effective EMI shielding characteristics. The development and characterization of flexible polymer composites combining hard magnetic nanoparticles and electrically conductive fillers are explored. The suitability of thermoplastic polyurethane (TPU), polydimethylsiloxane (PDMS) and epoxy resins for use as EMI shielding composite matrices was evaluated in terms of their flexibility, stability and biocompatibility. Hybrid filler systems were developed to …
Published in Journal of Polymer & Composites · Vol. 13, Issue 6, 2025 · pp. 630–648 Read article
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The Role of IoT in Sustainable Agriculture: Leveraging Big Data for Precision Farming
Abstract: Precision farming combined with the Internet of Things (IoT) is transforming the agricultural industry by boosting productivity and encouraging sustainable practices.. This paper explores the transformative impact of IoT technologies on modern agriculture, focusing on how big data analytics can be leveraged to optimize farming practices, reduce waste, and conserve resources. The Internet of Things (IoT) offers real-time data on a range of agricultural characteristics, including soil moisture, temperature, humidity, …
Published in Journal of Instrumentation Technology & Innovations · Vol. 14, Issue 2, 2024 Read article
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SYNTHESIS AND CHARACTERIZATION OF Mn2+ DOPED LiPbX3(X = Cl, Br, I)
Abstract: In this paper the structural, electronic and optical properties of Mn doped Pb based cubic perovskites LiPbX3(X= Cl, Br and I) were studied by wet chemical method (sol gel method). For Mn doped LiPbX3(X= Cl, Br and I) NCs, MnCl2 and PbBr2 were added in molar feed ratio 1.35 mole% and nan crystal were examine with the help of TEM and their structure were confirmed by X-ray diffraction (XRD). Additionally, …
Published in Journal of Polymer & Composites · Vol. 12, Issue 6, 2024 · pp. 48–54 Read article
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A Secured Architecture of Internet of Things (IoT) in the 5G Age
Abstract: Internet of things (IoT) is a technology capable of connecting vast number of devices of many types worldwide via the internet using unique IP addresses. The connected devices can communicate ubiquitously anywhere, anytime for any given user. Such globally distributed networks require a high level of connectivity among its components like smart sensors, workstations as well as networking devices. Thankfully, with the aid of the recently emerged 5G technology, which …
Published in International Journal of Mobile Computing Technology · Vol. 3, Issue 1, 2025 · pp. 33–43 Read article
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Experimental Demonstration on Microfluidic Capillary Flow of Red Dye in Photoresist based Glass Microfluidic Devices
Abstract: In this experimental work, a set of three individual SU-8 based glass microfluidic devices are fabricated by maskless lithography and indirect bonding technique in leakage-free conditions. Commercially available red coloured food dye is used as the selected working liquid. The microfluidic leakage in other set of two leaky microfluidic devices is experimentally demonstrated. Microfluidic devices should be fabricated at leakage-free conditions to achieve exact fluid flow characteristics. The effect of …
Published in Journal of Thin Films, Coating Science Technology & Application · Vol. 7, Issue 1, 2020 · pp. 1–7 Read article
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Performance Analysis of Ultra-Short Junctionless DGMOS Nanowire Transistors with High-k Gate Dielectric
Abstract: AbstractIn this report, we present a comparative analysis of ultrashort 3-D junctionless nanowire DGMOS transistors using different high-k gate dielectric by virtually fabricating the device in Visual TCAD. The ultrashort devices having channel length of 20 nm were simulated and performances like I-V characteristics, transconductance etc. were analysed. It was found that HfO2 has better steady state performances as gate dielectric owing to better control of the channel over the …
Published in Journal of Communication Engineering & Systems · Vol. 9, Issue 1, 2019 · pp. 35–42 Read article
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Optimization and Analysis of InGaAs Vertical Nanowire Transistor for Memory Array Applications
Abstract: In this paper, we present a cylindrical gate all around In 0.53 Ga 0.47 As Vertical Nanowire Transistor (VNWT) on silicon at ultra-shortchannel gate length 14nm by numerical simulation approach. The In 0.53 Ga 0.47 As VNWT device dimensions like diameter, source and drainextension length and channel doping are taken as critical process parameters and optimized for better performance. The proposed device isscalable up-to 10nm with a maximum On-current of …
Published in Journal of VLSI Design Tools and Technology · Vol. 13, Issue 2, 2023 · pp. 32–44 Read article
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Techniques of Atomic Structure Orbit Potential of The Frequency Characteristics of Silicon Element
Abstract: This study explores the technological applications and material integration of semiconductor materials, with a focus on their electronic properties and practical implementations. The investigation primarily addresses four key objectives: analyzing the electronic band structure and density of states (DOS) of semiconductor materials, evaluating the band alignment in heterojunctions, and integrating these materials into practical technological applications. Using a simplified tight-binding model, we compute and plot the electronic band structure of …
Published in Journal of Thin Films, Coating Science Technology & Application · Vol. 11, Issue 3, 2024 · pp. 16–32 Read article
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Simulation Studies on the Electrical Characteristics of Novel Nanoelectronic AlGaN/GaN/AlGaN Double-Heterojunction HEMTs for Industrial Applications
Abstract: AbstractWe report the drain characteristics of AlGaN/GaN/AlGaN double heterojunction (DH) high electron mobility transistors (HEMTs) with the associated quantum well depths. The drain current is higher corresponding to the larger doping concentration of AlGaN nano-layer. The drain current is higher with the larger gate voltage at any particular drain voltage. The quantum well depth is significantly higher with the increasing doping concentration of AlGaN nano-layer. About the novelty of this …
Published in Journal of Semiconductor Devices and Circuits · Vol. 3, Issue 3, 2016 · pp. 6–18 Read article
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A Comparative Analysis of Characterization of Silicon Nanowire and CNT FETs
Abstract: The CMOS technology has been replaced by nano-scale semiconductor devices for future nanotechnology. These nano scale semiconductor devices have been replaced by nanowire FET and CNT FET due to their outstanding device physics. In this paper, a comparative analytical study on the basis of their operation, characteristics, structure and design has been investigated. HSPICE has been used to simulate CNT FET and comparison has been done with nanowire FET. The …
Published in Journal of Nanoscience, NanoEngineering & Applications · Vol. 10, Issue 2, 2020 · pp. 37–49 Read article
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Electrical Performance of the Silicon Nanowire Double Gate FET
Abstract: Silicon nanowire (SiNW) metal-oxide-semiconductor field-effect transistor (MOSFET) is a promising candidate of future CMOS device for further scaling. As the cross-sectional dimensions of SiNW channel is very small, cross-sectional shapes should affect electrical characteristics of SiNW FETs. In this work, effects of cross-sectional shapes of gate stack formation on (i) properties of double gate of SiNW FET; (ii) carrier transport properties including on-current, effective carrier mobility and inversion charge density; …
Published in Nano Trends – A Journal of Nano Technology & Its Applications · Vol. 22, Issue 3, 2020 · pp. 5–11 Read article
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Numerical Simulation-based Comparative Study of P3HT-based Top Contact and Bottom Contact OTFTs
Abstract: AbstractIn this paper presents numerical simulation-based comparative study of bottom and top contact configurations of P3HT based organic thin-film transistor (OTFT). I-V characteristics has been evaluated using the TCAD simulator and comparison of the performance parameters of these devices has been presented. The dimensions of the transistors for all the proposed structures are kept the same for a valid comparison between them. The observed results were explained based on the …
Published in Journal of Electronic Design Technology · Vol. 10, Issue 3, 2019 · pp. 27–32 Read article