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191 articles for “transistor”
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Ultra Low-Power 9-Transistor Flip-Flop Design
Abstract: AbstractThe use of very large scale integration technology in high performance computing, wireless communication, consumer electronics has been rising at a very fast rate. The challenge for VLSI technology is mainly in leakage power consumption. Flip-Flops (FFs) are the basic storage elements used extensively in digital system designs. It accounts for 20%–45% of the total system power and may considerably impact the chip area. In this paper, an ultra-low-power true …
Published in Journal of Microelectronics and Solid State Devices · Vol. 5, Issue 3, 2018 · pp. 27–32 Read article
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A Dual Material Control Gate Tunnel Field Effect Transistor for an Asymmetric Doping at Source and Drain Regions
Abstract: Double-Gate tunnel FET devices, which uses high-κ gate dielectric, are explored using realistic design parameters, showing an ON-current as high as 0.23 mA, a gate voltage of 1.8 V, an OFF-current of not more than 1 fA (neglecting gate leakage), an improved ordinary subthreshold swing of 57 mV/dec, and a lower point slope of 11 mV/dec. A dual material control gate tunnel field effect transistor for an asymmetric doping at …
Published in Journal of VLSI Design Tools and Technology · Vol. 8, Issue 3, 2018 · pp. 45–53 Read article
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Transistor Full Adder: A Comparative Performance Analysis
Abstract: AbstractIn this work the static energy recovery full adder named 10T13A with reduced 10 transistors is implemented. The fan in and fan-out of gates is also reduced by reducing number of transistors. Calculation of 10T13A full adder various parameters has been at 45 nm technology and compared with MTCMOS technique based 10T13A Full Adder. The active power has been calculated at 45 nm technology using Cadence Virtuoso Tool. Simulation results …
Published in Recent Trends in Electronics Communication Systems · Vol. 5, Issue 3, 2018 · pp. 22–31 Read article
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Performance Analysis of Ultra-Short Junctionless DGMOS Nanowire Transistors with High-k Gate Dielectric
Abstract: AbstractIn this report, we present a comparative analysis of ultrashort 3-D junctionless nanowire DGMOS transistors using different high-k gate dielectric by virtually fabricating the device in Visual TCAD. The ultrashort devices having channel length of 20 nm were simulated and performances like I-V characteristics, transconductance etc. were analysed. It was found that HfO2 has better steady state performances as gate dielectric owing to better control of the channel over the …
Published in Journal of Communication Engineering & Systems · Vol. 9, Issue 1, 2019 · pp. 35–42 Read article
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Report on the Novel Electrical Characteristics of Microelectronic High Electron Mobility Transistors to Establish a Low-Cost Microelectronics Laboratory in the National Institute of Technology Arunachal Pradesh
Abstract: AbstractIn this work, total 22584 individual simulation-outputs are reported according to the performed simulation-studies on the microelectronic AlGaN/GaN high electron mobility transistors (HEMTs). This series of simulation work has been performed using the SILVACO-ATLAS software tool on the basis of already established theories related to the semiconductor-physics of HEMTs. In this work, the drain characteristics are investigated with respect to the aluminium mole fraction, drain voltage, gate voltage, gate length …
Published in Journal of Semiconductor Devices and Circuits · Vol. 4, Issue 2, 2017 · pp. 6–28 Read article
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SPICE Modeling of LDMOSFET Transistor
Abstract: AbstractHigh voltage integrated circuits, these days are the most viable alternatives to discrete circuits for various applications. The popular amongst them is the lateral double diffused MOS transistor (LDMOS). It is based on the lightly doped drain (LDD) concept. The constraint that occurred in modeling LDMOS is to minimize the on-resistance along with maintaining a high breakdown voltage. To achieve the objective, the help of RESURF (Reduced Surface Field) concept …
Published in Journal of Semiconductor Devices and Circuits · Vol. 3, Issue 1, 2016 · pp. 42–57 Read article
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A Review on High Electron Mobility Transistors
Abstract: AbstractThe demand for high speed semiconductor devices is increasing in recent years with the rapid development of the high frequency wireless and fiber optical communication systems. High electron mobility transistor (HEMT) is an important device and an excellent candidate for millimeter, sub-millimeter and microwave applications. Also, these devices have high frequency, high speed, low noise, high breakdown voltage, low cost and other power handling capabilities. Due to these reasons, they …
Published in Journal of Semiconductor Devices and Circuits · Vol. 3, Issue 2, 2016 · pp. 1–10 Read article
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Simulation Studies on the Electrical Characteristics of High Electron Mobility Transistors
Abstract: AbstractSimulation studies have been performed on the AlGaN/GaN high electron mobility transistor (HEMT) with AlN spacer layer. The current-voltage characteristics have been studied with respect to different gate voltages and different doping concentrations. Studies have been performed on the quantum well depth variation corresponding to the designed HEMTs.Keywords: Doping, drain current, drain voltage, quantum wellCite this ArticleSanjib Kalita, Ashish Prajapati, Susanta Sinha Roy, Jyoti Prasad Banerjee, James Andrew McLaughlin, Subhadeep …
Published in Journal of Semiconductor Devices and Circuits · Vol. 3, Issue 2, 2016 · pp. 32–36 Read article
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Fundamental Concepts and Applications of High Electron Mobility Transistors (HEMTs): A Qualitative Review
Abstract: A brief qualitative review of the modulation doped field effect transistors (MODFETs), also known as High Electron Mobility Transistors (HEMTs) is provided here. The prominent features of this review include detailed discussion on the role of various layers and comparison between various HEMTs structures. Emphasis has been given to offer a complete overview of the various aspects of HEMT devices, from fabrication to applications, in a synergetic manner.
Published in Journal of Semiconductor Devices and Circuits · Vol. 2, Issue 1, 2015 · pp. 31–47 Read article
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Studies on the Electrical Characteristics of AlGaAs/GaAs High Electron Mobility Transistors
Abstract: AbstractIn this work, total 5722 individual simulation outputs are reported. The effects of drain voltage, gate voltage, aluminium mole fraction, and gate length on drain current are studied in AlGaAs/GaAs high electron mobility transistors (HEMTs). The linear region and saturation region are prominent in each drain characteristic curve. The drain current reduces in the structure of larger gate length. This work is useful to fabricate the HEMT based biomedical sensors. …
Published in Journal of Thin Films, Coating Science Technology & Application · Vol. 5, Issue 3, 2018 · pp. 30–40 Read article
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Low Power High Speed Eight-Transistor (8T) SRAM Cell with Enhanced Data Stability
Abstract: The demand of static random access memory cell in embedded memories is rapidly increasing. To design SRAM is continuously becoming difficult due to limitation of weaker write margin, degraded data stability and higher leakage power consumption. In order to overcome these limitations, new 8T SRAM has been explored. The simulation results depicts better data stability, low access delay and decreased leakage power consumption. Alternatively, proposed cell with sleep transistor and …
Published in Journal of VLSI Design Tools and Technology · Vol. 7, Issue 3, 2017 · pp. 35–44 Read article
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Fabrication, Numerical Simulation and Compact Modeling of Ph-BTBT-C10 Organic Thin Film Transistor
Abstract: Flexible and cost-effective electronics have been necessitated by the advent of organic thin-film transistors (OTFTs). This study aims to study the performance of OTFT using a 2-decyl-7-phenyl-[1]benzothieno[3,2-b][1]benzothiophene (Ph-BTBT-C10) organic semiconductor. The paper also explore accurate device modeling for technology optimization and circuit design that supports device improvement. This research includes device fabrication, numerical simulation using TCAD, compact modeling, and parameter extraction. By combining temperature-dependent bandgap narrowing with existing theories, this …
Published in Journal of Polymer & Composites · Vol. 12, Issue 5, 2024 · pp. 1–18 Read article
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Polymer-coated Composites: Enhancing Performance in Single Electron Transistors
Abstract: The single electron transistors (SETs) have potential for ultra-low power operation and quantum coherence, and due to this it guarantees for next-generation electronics devices and quantum computing. SETs have the ability to control movement of a single electron and this unique ability allows significant advancement in the energy efficiency and device miniaturization. There are some obstacles that need to be overcome to achieve reliable and effective operation, particularly for room …
Published in Journal of Polymer & Composites · Vol. 13, Issue 1, 2025 · pp. 108–114 Read article
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VLSI Transistor and Interconnect Scaling Overview
Abstract: In this paper, various types of device and interconnect scaling used for VLSI transistors are mentioned. Advanced device scaling techniques using SOI & FINFET technology are discussed for nano-devices. New technologies adopted at research level are stated here in brief. Keywords: Scaling factor ‘s’, technology or process node, short-channel effects, draininduced barrier lowering, punch through, surface scattering, velocity saturation, impact ionization, hot electrons, SOI, floating body, FinFET, quantum dot cellular …
Published in Journal of Electronic Design Technology · Vol. 5, Issue 1, 2014 · pp. 1–15 Read article
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Numerical Simulation of Pentacene based Organic Thin Film Transistor with Inorganic Gate Dielectrics
Abstract: This paper presents a 2D numerical simulation and Electrical Characterization of Pentacene (Organic semiconductor) based Organic thin film transistor (OTFT) devices with different inorganic gate dielectrics materials SiO2, Al2O3 and HfO2 and Electrical parameters including; Mobility (µ), Threshold Voltage (Vt), Ion/Ioff ,Sub threshold slope (SS) and Transconductance (gm) are extracted.
Published in Journal of Microelectronics and Solid State Devices · Vol. 6, Issue 2, 2019 · pp. 32–38 Read article
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Numerical Simulation and Parameter Analysis for Pentacene based Organic thin Film Transistor with HfO2 Gate Dielectric
Abstract: This paper explains 2D numerical simulation and Characterization of Electrical parameter of Pentacene (Organic semiconductor) based Organic thin film transistor (OTFT) devices with HfO2 as a gate dielectric and Electrical parameters including; Threshold Voltage (Vt), Mobility (µ),Ion/Ioff, and Transconductance (gm), Sub threshold slope (SS) are extracted. The numerical simulation includes model for defect density of state and field dependent mobility model.
Published in Journal of Semiconductor Devices and Circuits · Vol. 6, Issue 2, 2019 · pp. 28–34 Read article
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Electrical Characteristics of Nanoelectronic Double-Heterojunction High Electron Mobility Transistors
Abstract: AbstractIn this work, a maximum drain current of 554 mA is achieved by the simulated structures of double-heterojunction HEMTs using the SILVACO-ATLAS software tool. The drain current is found to be higher at shorter gate length and at larger aluminium mole fraction. The drain current is also higher at larger thickness of AlGaN barrier layer and at larger doping concentration of AlGaN barrier layer.In this work, the formation of 2-DEG …
Published in Journal of Semiconductor Devices and Circuits · Vol. 7, Issue 1, 2020 · pp. 18–28 Read article
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Simulation Study of Process Variations in Double Gate Junctionless Field-Effect Transistors
Abstract: This work discusses the process variations in symmetrical double-gate (DG) junctionless (JL) field-effect transistors (FETs) by device simulation. Output I-V characteristics along with subthreshold slope increase, DIBL variations with drain voltage and threshold voltage shift variations are systematically analyzed with the general variability issues including oxide thickness, channel thickness and doping concentration. Potential distribution in the body channel region is also analyzed. Optimum values of the variability factors are considered …
Published in Journal of Semiconductor Devices and Circuits · Vol. 2, Issue 2, 2015 · pp. 18–27 Read article
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Experimental Investigations to Improve the Electrical Characteristics of Nitride-Based Nanoelectronic High Electron Mobility Transistors
Abstract: In this work, the DC and RF performances of conventional nanoelectronic high electron mobility transistor (HEMT) are compared with those of two individually modified HEMT structures in a nano-scale regime. All simulation results are produced by the SILVACO- ATLAS physical simulator according to the performed designs of HEMT structures. In each of these HEMT structures, the formation of quantum well is demonstrated at unbiased condition. In the DC analysis of …
Published in Journal of Semiconductor Devices and Circuits · Vol. 8, Issue 1, 2021 · pp. 14–30 Read article
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A Review on Tunnel Field Effect Transistor for Ambipolar Suppression, Higher ON Current and a Lower Subthreshold Swing
Abstract: Modern IC technology force on the ICs design considering more area optimization and low power techniques. We study herein the effect of hetero gate dielectric materials on the OFF-current (IOFF) and ON-current (ION) of the heterogate (high-k/low-k) tunnel field-effect transistor for which the simulations give significant improvements as compared to single-gate devices using an SiO2 gate dielectric. The ambipolar behavior is suppressed and radio frequency (RF) parameters are enhanced by …
Published in Journal of VLSI Design Tools and Technology · Vol. 8, Issue 2, 2018 · pp. 55–66 Read article