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14 articles for “silicon nanowire”
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Electrical Performance of the Silicon Nanowire Double Gate FET
Abstract: Silicon nanowire (SiNW) metal-oxide-semiconductor field-effect transistor (MOSFET) is a promising candidate of future CMOS device for further scaling. As the cross-sectional dimensions of SiNW channel is very small, cross-sectional shapes should affect electrical characteristics of SiNW FETs. In this work, effects of cross-sectional shapes of gate stack formation on (i) properties of double gate of SiNW FET; (ii) carrier transport properties including on-current, effective carrier mobility and inversion charge density; …
Published in Nano Trends – A Journal of Nano Technology & Its Applications · Vol. 22, Issue 3, 2020 · pp. 5–11 Read article
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DNA Hybridization Biosensor using Silicon Nanowire PIC Waveguide
Abstract: Abstract: In this paper, silicon nanowire based optical waveguide is investigated to discover its application as a bio-detecting reason. In silicon nanowire based optical waveguide, silicon bars are vertically adjusted in 2-dimensional exhibit design over SiO2 substrate. These silicon bars are of couple of nanometer sizes and called as nanowire. Low Refractive Index (RI) gapping in these silicon wires holds the optical power. Quasi-TE mode is supported by these vertical …
Published in Recent Trends in Sensor Research & Technology · Vol. 6, Issue 1, 2019 · pp. 7–12 Read article
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A Technological Review on Quantum Ballistic Transport Model Based Silicon Nanowire Field Effect Transistors for Circuit Simulation and Design
Abstract: Nanowire MOSFETs are recognized as one of the most promising candidates to extend Moore’s law into nanoelectronics era. This paper reviews the process, application, device physics and compact modeling of Gate All around (GAA) nanowire MOSFETs. The most widely used methods of nanowire synthesis have been discussed. The paper presents the various device optimization techniques and scaling potential of nanowire transistors. A process sensitivity study of silicon nanowire transistors at …
Published in Journal of Nanoscience, NanoEngineering & Applications · Vol. 5, Issue 2, 2015 · pp. 20–31 Read article
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A Comparative Study on Carbon Nanotube MOSFET, Silicon Nanowire MOSFET and Single Gate MOSFET
Abstract: Among many of the concerns for the researchers in nano-electronics, Single Gate MOSFET, Silicon Nanowire MOSFET and Carbon Nanotube MOSFET were very popular three. All of them are different in their structures and performance. This paper is focused on the comparison of their characteristics in terms of Current- voltage relations, Mobility charge density and Quantum capacitance. ‘FETToy’ in ‘nanohub’ was used to simulate the predefined models in room temperature. Drain …
Published in Journal of Electronic Design Technology · Vol. 6, Issue 2, 2015 · pp. 7–12 Read article
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A Comparative Analysis of Characterization of Silicon Nanowire and CNT FETs
Abstract: The CMOS technology has been replaced by nano-scale semiconductor devices for future nanotechnology. These nano scale semiconductor devices have been replaced by nanowire FET and CNT FET due to their outstanding device physics. In this paper, a comparative analytical study on the basis of their operation, characteristics, structure and design has been investigated. HSPICE has been used to simulate CNT FET and comparison has been done with nanowire FET. The …
Published in Journal of Nanoscience, NanoEngineering & Applications · Vol. 10, Issue 2, 2020 · pp. 37–49 Read article
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Performance Analysis of Junctionless SONOS Memory
Abstract: AbstractThis paper presents the performance analysis of the JL SONOS device electrical characteristics of the two different types of device i.e., one built on BULK substrate and other over the SOI substrate. The difference in the properties and its related impact on the device performance will be discussed through physical interpretations and mathematical equations. Simulation of both devices is done by taking same device dimension and parameter to check the …
Published in Journal of Operating Systems Development & Trends · Vol. 7, Issue 3, 2020 · pp. 25–31 Read article
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Integration of Nanotechnology in Electric Vehical Technology: A Comprehensive Review
Abstract: The integration of nanotechnology in electric vehicles (EVs) heralds significant advancements in energy storage, efficiency, and overall vehicle performance. This paper explores the current state and future potential of nanotechnology applications in EVs, focusing on battery technology, lightweight materials, and energy conversion systems. In battery technology, nanostructured anodes and cathodes, such as silicon nanowires and lithium iron phosphate nanoparticles, enhance energy density and charging rates. Solid-state electrolytes with nanocomposite materials …
Published in Nano Trends – A Journal of Nano Technology & Its Applications · Vol. 26, Issue 1, 2024 · pp. 29–34 Read article
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TiO₂ Nanostructured Material-based Gas Sensor for Detecting Oxygen and LPG Gases
Abstract: This Paper investigates the use of TiO2 nanowires and nanotetrapods on glass and silicon substrates for sensing combustible gases such as LPG (Liquid Petroleum Gas) and Oxygen. The growth of Titanium dioxide (TiO2) nanowires/nanorods/nanotetrapods was investigated using both physical and chemical methods. In thermal evaporation method, both with and without vacuum conditions, was employed to synthesize various TiO2 nanostructures. A vacuum coating machine was utilized to create uniform TiO2 thin …
Published in Journal of Polymer & Composites · Vol. 13, Issue 5, 2025 · pp. 443–451 Read article
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Optimization and Analysis of InGaAs Vertical Nanowire Transistor for Memory Array Applications
Abstract: In this paper, we present a cylindrical gate all around In 0.53 Ga 0.47 As Vertical Nanowire Transistor (VNWT) on silicon at ultra-shortchannel gate length 14nm by numerical simulation approach. The In 0.53 Ga 0.47 As VNWT device dimensions like diameter, source and drainextension length and channel doping are taken as critical process parameters and optimized for better performance. The proposed device isscalable up-to 10nm with a maximum On-current of …
Published in Journal of VLSI Design Tools and Technology · Vol. 13, Issue 2, 2023 · pp. 32–44 Read article
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Effect of Doping and Crystal Orientation on Channel Current for Multigate Si Nanowire FET
Abstract: This manuscript investigates the effects on channel current by varying gate orientation as well as channel doping concentration for Si nanowire FET. Both gate and drain voltage biasing are considered here for showing variations in channel current. After analyzing simulation results for silicon 100 and 110 crystal orientation it has been found that gate all around and top gate only show significant increment in channel current on different occasions over …
Published in Journal of VLSI Design Tools and Technology · Vol. 7, Issue 2, 2017 · pp. 20–29 Read article
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Nanowire Photodetectors and Applications: A Review Study
Abstract: The utilization of nanowires and nanowire structures as photodetectors is an arising research subject. Novel gadget structures incorporated in single nanowire gadgets are additionally being effectively contemplated and created. Here, general NW-PD ideas are investigated, along with a point-by-point depiction of the actual phenomenon happening in nanowire photoconductors & phototransistors. Low dimensional frameworks like nanotubes and nanowires have intriguing, and technologically valuable, optical and electrical properties. Studies on these frameworks …
Published in Journal of Semiconductor Devices and Circuits · Vol. 10, Issue 2, 2024 · pp. 15–19 Read article
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Nanowire Photodetectors and Applications: A Review Study
Abstract: The utilization of nanowires and nanowire structures as photodetectors is an arising research subject. Novel gadget structures incorporated in single nanowire gadgets are additionally being effectively contemplated and created. Here, general NW-PD ideas are investigated, along with a point-by-point depiction of the actual phenomenon happening in nanowire photoconductors & phototransistors. Low dimensional frameworks like nanotubes and nanowires have intriguing, and technologically valuable, optical and electrical properties. Studies on these frameworks …
Published in Journal of Semiconductor Devices and Circuits · Vol. 10, Issue 2, 2024 · pp. 15–19 Read article
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Investigation and Dependency Analysis of Silicon Film Thickness on Performance of Surrounding Gate MOSFET at Subthreshold Regime
Abstract: The characteristics of cylindrical gate all around MOSFET have been studied in terms of the dependence of various device performance metrics on silicon film thickness (Tsi). In this work, the effect of silicon film thickness on numerous performance metrics like threshold voltage (Vt), On current (Ion), subthreshold leakage current (Ioff), On-Off current ratio (Ion/Ioff) and DIBL of cylindrical GAA are comprehensively evaluated and analysed. It has been observed that cylindrical …
Published in Journal of VLSI Design Tools and Technology · Vol. 8, Issue 2, 2018 · pp. 49–54 Read article
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Modeling of ZnO Based Nano Sensor Device for Evaluating Electronic Interaction with NO2 Pollutant: Combining Multiphysics Simulation and DFT Study
Abstract: This study focuses on the designing and modeling of a sensor device employing zinc oxide (ZnO) nanowires (NWs), and the evaluation of the chemical response of the same in the presence of nitrogen dioxide (NO2), which is an acute harmful pollutant for human health and environment. Experimentally synthesized ZnO nanostructures were used as the basis for modeling of the ZnO NWs based sensor device along with a single ZnO NW, …
Published in Journal of Polymer & Composites · Vol. 13, Issue 2, 2025 · pp. 211–219 Read article