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Journal of VLSI Design Tools and Technology

Effect of Doping and Crystal Orientation on Channel Current for Multigate Si Nanowire FET

  1. Habib Muhammad Nazir Ahmad
  2. Mustafa Mohammad Shaky

Abstract

This manuscript investigates the effects on channel current by varying gate orientation as well as channel doping concentration for Si nanowire FET. Both gate and drain voltage biasing are considered here for showing variations in channel current. After analyzing simulation results for silicon 100 and 110 crystal orientation it has been found that gate all around and top gate only show significant increment in channel current on different occasions over other gate structures.   Keywords: FinFET, NWFET, GAA, multi gate Cite this Article Habib Muhammad Nazir Ahmad, Mustafa Mohammad Shaky. Effect of Doping and Crystal Orientation on Channel Current for Multigate Si Nanowire FET. Journal of VLSI Design Tools & Technology. 2017; 7(2):       20–29p.
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