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769 articles for “SR”
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Multicriteria Decision Making using SR-Fuzzy Sets
Abstract: In this study, we introduce and explore square-root fuzzy sets (SR-Fuzzy sets), a novel extension within the realm of fuzzy set theory. We begin by establishing a comparative analysis between SR-Fuzzy sets and two well-known fuzzy set models: Intuitionistic Fuzzy Sets (IFS) and Pythagorean Fuzzy Sets (PFS). This comparison highlights the unique characteristics and mathematical structure of SR-Fuzzy sets. A particular focus is placed on the complement operator, which plays …
Published in Recent Trends in Mathematics · Vol. 1, Issue 2, 2024 · pp. 12–20 Read article
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Delay Analysis of HS-14T 45nm CMOS SRAM with Different SRAM Techniques for Improvement in Speed
Abstract: This paper presents a novel HS-14T design aimed at significantly improving read and write delays compared to conventional 6T and other memory cells RHRD-12T, SEUH-12T, and NHRC-14T. As technology scales, the demand for faster and more stable memory cells becomes increasingly critical. Our proposed HS-14T incorporates additional transistors to enhance stability and reduce access times, resulting in notable performance gains. Comprehensive simulations reveal that the HS-14T SRAM cell substantially reduces …
Published in Journal of VLSI Design Tools and Technology · Vol. 14, Issue 2, 2024 · pp. 1–13 Read article
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Design and Implementation of SRF-PLL for Grid Synchronization
Abstract: The existing power system stands in a peculiar spot where a lot of innovative ideas keeps on forcing it to change itself to work more efficiently and consumer friendly. The micro-grid is one such area where the involvement of consumers in the power system is much more engaging than it was before. With the emergence of dependable and reliable renewable sources of energy such as solar and wind, the need …
Published in Journal of Control & Instrumentation · Vol. 10, Issue 2, 2019 · pp. 21–27 Read article
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Design and Implementation of Low Power and High Speed 10T SRAM with High SNM
Abstract: The project introduces a low standby power 10T (LP10T) SRAM cell that focuses on achieving high read stability and write-ability while minimizing power consumption. The LP10T SRAM cell utilizes a strong cross-coupled structure that combines a standard inverter with a stacked transistor and a Schmitt-trigger inverter with a double-length pull-up transistor. One of the key advantages of the LP10T SRAM cell is that it separates the read path from the …
Published in Journal of Microcontroller Engineering and Applications · Vol. 10, Issue 1, 2023 · pp. 40–65 Read article
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Design and Implementation of Array for Scaling Power and Area in 4t SRAM Cell
Abstract: In this article in order to reduce the power and area of the Static Random-Access Memory (SRAM) array while maintaining the competitive performance. By using the CMOS technology, the design structure is made to for desired configuration of SRAM array by utilizing the SRAM cell and six-transistor (6T), In order to reduce the number of switches for enhancing performance working with the deep submicron of values 130nm, 90nm and 65nm …
Published in Journal of Semiconductor Devices and Circuits · Vol. 9, Issue 1, 2022 · pp. 29–33 Read article
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A Reliable Low Standby Power 6T SRAM Cell
Abstract: The project introduces a low standby power 10T (LP10T) SRAM cell that focuses on achieving high read stability and write-ability while minimizing power consumption. The LP10T SRAM cell uses a robust cross-coupled design that combines a Schmitt-trigger inverter with a double-length pull-up transistor and a regular inverter with a stacking transistor. One of the key advantages of the LP10T SRAM cell is that it separates the read path from the …
Published in Journal of VLSI Design Tools and Technology · Vol. 13, Issue 1, 2023 · pp. 33–59 Read article
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Eu3+/Gd3+ doubly doped ions in SrCO3-Al2O3-B2O3-SiO2 glasses for optical and White light applications
Abstract: The present work deals with the optical analysis of SrCO3-Al2O3-B2O3-SiO2 glass materials doubly doped with Eu3+/Gd3+ ion were prepared by melt quenching technique. These are studied by XRD, physical properties, FITIR, optical absorption and luminescence spectroscopy. The XRD measurements are conducted to verify the amorphous form of prepared material and structural modifications can be explained by the FTIR spectra. The thermal stability of the glass matrix is measured by the …
Published in Journal of Semiconductor Devices and Circuits · Vol. 11, Issue 2, 2024 Read article
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Development of Polymer Based SRAM Cell with Enhance Low Power Performance
Abstract: Low-power memory technologies are in high demand with the rapid growth of portable electronics and energy-efficient computing systems. Static random-access memory (SRAM) plays a crucial role in processors, cache memories, and system-on-chip applications due to their speed and reliability. Static Random Access Memory (SRAM) is typically implemented using complementary MOS (CMOS) technology, which integrates both PMOS (P-channel Metal–Oxide–Semiconductor) and NMOS (N-channel Metal–Oxide–Semiconductor) transistors. However, as technology scales to deep submicron …
Published in Journal of Polymer & Composites · Vol. 14, Issue 1, 2026 · pp. 1439–1448 Read article
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Wideband Bandstop Filter Using Triangular SRR-DGS
Abstract: This article presents a dumbbell shaped triangular split ring resonator (SRR) in the design of wideband bandstop filter. Initially, a conventional dumbbell shaped triangular defective ground structure (DGS) is used to realize the single bandstop filters at the frequency of 3.55 GHz. This triangular shaped DGS structure is modified to a new structure to realize a wideband bandstop filter characteristics with the frequency range of 3.3 to 4.5 GHz which …
Published in Journal of Electronic Design Technology · Vol. 8, Issue 1, 2017 · pp. 11–16 Read article
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An Overview of Construction Market of Sri Lanka
Abstract: This paper provides an overview of the construction market in Sri Lanka, with a focus on the Colombo region. It discusses the strengths, weaknesses, opportunities, and constraints of the construction market in the country. The main drivers of the construction sector are identified, including urbanization and infrastructure development. The paper explores the ease of embarking on international construction projects within the Colombo region, noting that while the Sri Lankan government …
Published in International Journal of Rural and Regional Development · Vol. 1, Issue 1, 2023 · pp. 58–64 Read article
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Performance and Analysis of 6T, 8T & 10T SRAM Cell in 28nm Technology
Abstract: Technology scaling into deep sub-micron regimes has significantly increased the design challenges of Static Random Access Memory (SRAM), particularly at the 28 nm technology node. As transistor dimensions shrink, SRAM cells become more vulnerable to stability degradation, leakage current, process variations, and reduced noise margins, which adversely affect overall memory performance and reliability. The conventional 6T SRAM cell remains widely used due to its compact structure and high storage density; …
Published in Journal of VLSI Design Tools and Technology · Vol. 16, Issue 2, 2026 Read article
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Design And Validation of High Efficiency Of 10T Sram with High Recoverability Of Multi Node Soft Error
Abstract: Sensitive nodes' critical charge is decreasing, which increases the soft-error vulnerability of SRAM cells used in aerospace applications. A single event upset (SEU) occurs when a radiation particle hits a sensitive node in a typical 6T SRAM cell, flipping the data that has been stored in the cell. Consequently, a Soft-Error-Aware Read-Stability-Enhanced Low Power 10T (SARP10T) SRAM cell is suggested in this project to reduce SEUs. The quadro cell exhibits …
Published in Journal of Semiconductor Devices and Circuits · Vol. 10, Issue 2, 2024 · pp. 7–14 Read article
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Low Power High Speed Eight-Transistor (8T) SRAM Cell with Enhanced Data Stability
Abstract: The demand of static random access memory cell in embedded memories is rapidly increasing. To design SRAM is continuously becoming difficult due to limitation of weaker write margin, degraded data stability and higher leakage power consumption. In order to overcome these limitations, new 8T SRAM has been explored. The simulation results depicts better data stability, low access delay and decreased leakage power consumption. Alternatively, proposed cell with sleep transistor and …
Published in Journal of VLSI Design Tools and Technology · Vol. 7, Issue 3, 2017 · pp. 35–44 Read article
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Cluster Based Sleep Transistor Approach for Low Power 6T SRAM Cell
Abstract: The demand of high density VLSI circuits has been increasing as the size of ICs is becoming small day by day. It has been seen that, to reduce active power dissipation in memory, the supply voltage reduction is necessary. Lowering the supply voltage is one of the most straightforward and effective ways to suppress the energy consumption because reducing the supply voltage could reduce the dynamic power and leakage power …
Published in Journal of VLSI Design Tools and Technology · Vol. 6, Issue 1, 2016 · pp. 41–48 Read article
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Designing and Testing of various types of SRAM topologies with 90nm Technology
Abstract: VLSI technology provides a way for designing compact devices which are useful to human for leading their day to day, the advancement in the technology provides high speed and power consuming appliances. In this category, intend to design an application with high data rate and low power, memory efficient device and Static Random-Access Memory (SRAM) is structured. Improvement in the technology comprises of scaling down the design process and impact …
Published in Journal of Electronic Design Technology · Vol. 13, Issue 1, 2022 · pp. 12–16 Read article
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Performance Analysis of CMOS and FinFET Based SRAM
Abstract: As CMOS devices are scaled to nanometer regime, the consequences such as short channel effects and variations in the process parameters are increased which affects the reliability and performance of the circuit. In order to over these issues, FinFET can be used as a suitable replacement for CMOS as it is a promising and better technology without sacrificing the reliability and performance of the applications and the circuit design. In …
Published in Journal of VLSI Design Tools and Technology · Vol. 8, Issue 3, 2018 · pp. 23–27 Read article
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Low Power High Speed Eight-Transistor (8T) SRAM Cell with Enhanced Data Stability
Abstract: The demand of static random access memory cell in embedded memories is rapidly increasing. To design SRAM is continuously becoming difficult due to limitation of weaker write margin, degraded data stability and higher leakage power consumption. In order to overcome these limitations, new 8T SRAM has been explored. The simulation results depicts better data stability, low access delay and decreased leakage power consumption. Alternatively, proposed cell with sleep transistor and …
Published in Journal of VLSI Design Tools and Technology · Vol. 7, Issue 2, 2017 · pp. 35–44 Read article
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TORQUE RIPPLE MINIMIZATION OF PV BASED SRM DRIVE
Abstract: The switched reluctance motor drive is the recent choice for industrial applications due to its unique features like double salient pole motor without winding, permanent magnet and commutator in rotor. Solar photovoltaic based water pumping system using AC and DC motor is common but SRM drive is more favourable in terms of cost, reliability, robustness in nature. The primary drawback of SRM drive is higher torque ripple which makes heavy …
Published in Journal of Control & Instrumentation · Vol. 9, Issue 3, 2018 · pp. 37–44 Read article
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Leveraging cross-coupled domino logic for low-power, two-port SRAM with resilience to Differential Power Analysis (DPA) attacks
Abstract: Side channel attacks have become a serious threat to embedded and cryptographic systems. These attacks can be deployed by capturing the power consumption traces or electromagnetic radiations from the power and communication channels. SRAM is vulnerable to such attacks. Power consumed by SRAM for various read and write operations can express the information about bits being read from or written into the bit-cells which eventually exposes the instructions and data …
Published in Journal of VLSI Design Tools and Technology · Vol. 11, Issue 1, 2021 · pp. 8–16 Read article
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Design of 10T SRAM Cell for Low Power and High Speed Applications
Abstract: AbstractThis paper presents techniques for designing a low-power and higher read speed Static Random Access Memory (SRAM) cell. The cell achieves low power dissipation due to Virtual Ground (VGND) scheme and provides higher read performance due to Forward Body Biasing (FBB). Design metrics of the proposed SRAM cell was studied and compared with that of CON 6T, CON D10T, TG 8T, 9T, and ST-10T SRAM cells. It was observed that …
Published in Journal of Electronic Design Technology · Vol. 8, Issue 2, 2017 · pp. 16–27 Read article