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Journal of VLSI Design Tools and Technology

Performance Analysis of CMOS and FinFET Based SRAM

  1. Jeny Elsa Joji
  2. Sreekala K. S.
  3. Dhanusha P. B.

Abstract

As CMOS devices are scaled to nanometer regime, the consequences such as short channel effects and variations in the process parameters are increased which affects the reliability and performance of the circuit. In order to over these issues, FinFET can be used as a suitable replacement for CMOS as it is a promising and better technology without sacrificing the reliability and performance of the applications and the circuit design. In this study, comparison of performance of CMOS and FINFET based SRAM is done. This comparison study will help to select the better technology to design the circuits in future.Keywords: CMOS, FinFET, short channel effect, SRAM, reliabilityCite this ArticleJeny Elsa Joji, Sreekala KS, Dhanusha PB. Performance Analysis of CMOS and FinFET Based SRAM. Journal of VLSI Design Tools & Technology. 2018; 8(3): 23–27p.
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