1 publication

• Published Subscription 3 Dec 2018

  Performance Analysis of CMOS and FinFET Based SRAM

  By Jeny Elsa Joji, Sreekala K. S., Dhanusha P. B.

  Abstract: As CMOS devices are scaled to nanometer regime, the consequences such as short channel effects and variations in the process parameters are increased which affects the reliability and performance of the circuit. In order to over these issues, FinFET can be used as a suitable replacement for CMOS as it is a promising and better technology without sacrificing the reliability and performance of the applications and the circuit design. In …

  Published in Journal of VLSI Design Tools and Technology · Vol. 8, Issue 3, 2018 · pp. 23–27 Read article →