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38 articles for “Field Effect Transistor”
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Performance Improvement of Nano Field Effect Transistor Based on Zinc Oxide Semiconducting Materials – a Critical Analysis
Abstract: New semiconductor materials and new shapes for contemporary nanostructured semiconductor devices, like nanowires, have been researched as a result of advancements in transistor technology. Because of their unique electrical, photonic, and sensing capabilities, nanowires (NWs) constructed of various semiconductor material systems (gallium arsenide, zinc oxide, etc.) have been the subject of intense research over the past 20 years. Due to its distinctive properties, including high electron mobility, high crystalline quality, …
Published in Journal of Polymer & Composites · Vol. 12, Issue 2, 2024 · pp. 99–107 Read article
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Numerical Simulation and Modeling of Graphene Field Effect Transistors for High Frequency Applications
Abstract: AbstractIn this paper numerical simulation of graphene field effect transistor (GFET) has been performed using finite element method by solving Poisson's equation, continuity equation and energy balance equation self consistently. Various performance characteristics including charge distribution, band gap energy, transfer and output characteristics, electrostatic potential distribution and transconductance have been extracted.Keywords: Graphene field effect transistor (GFET), energy balance equation, mobility, ambipolar, numerical simulationCite this ArticleAshish Jha, Dwivedi ADD. Numerical Simulation …
Published in Journal of Microelectronics and Solid State Devices · Vol. 5, Issue 1, 2018 · pp. 27–33 Read article
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A Dual Material Control Gate Tunnel Field Effect Transistor for an Asymmetric Doping at Source and Drain Regions
Abstract: Double-Gate tunnel FET devices, which uses high-κ gate dielectric, are explored using realistic design parameters, showing an ON-current as high as 0.23 mA, a gate voltage of 1.8 V, an OFF-current of not more than 1 fA (neglecting gate leakage), an improved ordinary subthreshold swing of 57 mV/dec, and a lower point slope of 11 mV/dec. A dual material control gate tunnel field effect transistor for an asymmetric doping at …
Published in Journal of VLSI Design Tools and Technology · Vol. 8, Issue 3, 2018 · pp. 45–53 Read article
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Simulation Study of Process Variations in Double Gate Junctionless Field-Effect Transistors
Abstract: This work discusses the process variations in symmetrical double-gate (DG) junctionless (JL) field-effect transistors (FETs) by device simulation. Output I-V characteristics along with subthreshold slope increase, DIBL variations with drain voltage and threshold voltage shift variations are systematically analyzed with the general variability issues including oxide thickness, channel thickness and doping concentration. Potential distribution in the body channel region is also analyzed. Optimum values of the variability factors are considered …
Published in Journal of Semiconductor Devices and Circuits · Vol. 2, Issue 2, 2015 · pp. 18–27 Read article
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A Review on Tunnel Field Effect Transistor for Ambipolar Suppression, Higher ON Current and a Lower Subthreshold Swing
Abstract: Modern IC technology force on the ICs design considering more area optimization and low power techniques. We study herein the effect of hetero gate dielectric materials on the OFF-current (IOFF) and ON-current (ION) of the heterogate (high-k/low-k) tunnel field-effect transistor for which the simulations give significant improvements as compared to single-gate devices using an SiO2 gate dielectric. The ambipolar behavior is suppressed and radio frequency (RF) parameters are enhanced by …
Published in Journal of VLSI Design Tools and Technology · Vol. 8, Issue 2, 2018 · pp. 55–66 Read article
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Carbon Nanotube Transistor Based Novel Ring Oscillator with Minimum Power Consumption at 32 nm Technology Node
Abstract: In this article an analysis of carbon nanotube field effect transistor based ring oscillator is performed. After analysis it was found that carbon nanotube transistor consumes less power in comparison to silicon transistor. CNFET is one possible candidate to substitute silicon-based integrated circuit (IC) technology, as the performance increase of conventional transistors witnessed during the last decades will arrive at its ultimate limits in the near future. Its present progress …
Published in Journal of VLSI Design Tools and Technology · Vol. 7, Issue 3, 2017 · pp. 51–54 Read article
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Carbon Nanotube Transistor Based Novel Ring Oscillator with Minimum Power Consumption at 32 nm Technology Node
Abstract: In this article an analysis of carbon nanotube field effect transistor based ring oscillator is performed. After analysis it was found that carbon nanotube transistor consumes less power in comparison to silicon transistor. CNFET is one possible candidate to substitute silicon-based integrated circuit (IC) technology, as the performance increase of conventional transistors witnessed during the last decades will arrive at its ultimate limits in the near future. Its present progress …
Published in Journal of VLSI Design Tools and Technology · Vol. 7, Issue 2, 2017 · pp. 51–54 Read article
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Power-delay Product Optimal Design of Sequential Circuits Using Carbon Nanotubes
Abstract: This paper presents a power-aware high-performance design of ternary combinational and sequential circuits based on carbon nanotube field effect transistor (CNFET) using ternary logic. Carbon nanotube based field effect transistor (CNFET) are being studied extensively as a possible and promising choice for nanoscale integration and as successor to complementary metal oxide semiconductor (CMOS) devices. Ternary logic circuit has attracted substantial interest due to its simplicity, energy efficiency, and reduced interconnect …
Published in Journal of VLSI Design Tools and Technology · Vol. 3, Issue 3, 2013 Read article
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Advanced Mathematical Modelling of Nanoscale Semiconductor Devices for Low-Power Microelectronic Applications
Abstract: With the ongoing scaling down of semiconductor devices, there is an increasing need for accurate mathematical models of electrostatic control, carrier transport, leakage current, and power consumption at the nanometer scale. As the sizes of semiconductors continue to decrease, there is a growing need for accurate mathematical models of electrostatic control, carrier transport, leakage current, and power consumption at the nanometer scale. In this work, a common mathematical modelling approach …
Published in Journal of Microelectronics and Solid State Devices · Vol. 13, Issue 2, 2026 Read article
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Review Paper To Design a Low Power CNTFET Based XOR Gate
Abstract: The continuous scaling down of Silicon technology leads to various critical challenges and reliability issues such as short channel effect, high leakage current, interconnect problems, etc. CNTFET is the most probable substitutes to traditional MOSFET. The CNTFET device based circuits portray advantages with its better control over the device channel, reduced leakage current, reduced short channel effects. The CNTFET based XOR gate circuits incur the minimum power and energy dissipation. …
Published in Journal of VLSI Design Tools and Technology · Vol. 8, Issue 1, 2018 · pp. 48–53 Read article
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Physics of Semiconductors and Electronic Circuits
Abstract: This study talks about the basic ideas behind semiconductor physics and how important they are for making and running modern electronic circuits. It starts with a look at intrinsic and extrinsic semiconductors, going into how charge carriers move, energy band theory, and how doping affects how well the electricity flows. Next, the conversation turns to semiconductor devices like diodes, bipolar junction transistors (BJTs), and field-effect transistors (FETs). The focus is …
Published in Journal of Semiconductor Devices and Circuits · Vol. 12, Issue 2, 2025 · pp. 9–17 Read article
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A Comprehensive Review of FinFet Technology: Advantages, Challenges and Applications
Abstract: This has been complemented by improvements on the new layers that have surpassed the manufactures planar transistor by the new FinFET (Fin Field-Effect Transistor), which enhance modern demands on high performance, small size and low power consumption. This review is for a timely information on the latest development on FinFET technology, such as by curbing leakage currents by 50 percent and enhancing its speed by 30 percent proving that FinFETs …
Published in Journal of Semiconductor Devices and Circuits · Vol. 11, Issue 3, 2024 · pp. 1–12 Read article
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Fundamental Concepts and Applications of High Electron Mobility Transistors (HEMTs): A Qualitative Review
Abstract: A brief qualitative review of the modulation doped field effect transistors (MODFETs), also known as High Electron Mobility Transistors (HEMTs) is provided here. The prominent features of this review include detailed discussion on the role of various layers and comparison between various HEMTs structures. Emphasis has been given to offer a complete overview of the various aspects of HEMT devices, from fabrication to applications, in a synergetic manner.
Published in Journal of Semiconductor Devices and Circuits · Vol. 2, Issue 1, 2015 · pp. 31–47 Read article
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Quantum Behavior of Charge Carriers in a Symmetrical Double Gate MOSFET
Abstract: Our earlier work on modeling of single gate n-channel metal oxide semiconductor field effect transistor (MOSFET) has been extended to discuss the quantum behavior of charge carriers in symmetrical double gate (DG) MOSFET. The potential profile in the channel region of DG MOSFET has been obtained in parabolic approximation. The parabolic potential facilitates analytical expression for electric field. The appropriate Schrodinger’s equation has been solved to obtain wave functions in …
Published in Journal of VLSI Design Tools and Technology · Vol. 11, Issue 1, 2021 · pp. 17–28 Read article
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Sub-nano Regime DG-MOSFETs
Abstract: AbstractThe significance of device performance of Gallium Nitride based double gate metal-oxide- semiconductor field-effect-transistor has been executed. The simulations were done by Silvaco Atlas simulation software with focusing on non-equilibrium green function (NEGF). Multiple gate length (LG=9.1 nm) was observed to distinguish the transfer characteristics curve. The other concentration was observed for device ON-State Current (ION), OFF-State Current (IOFF), Drain Induced Barrier Lowering (DIBL), Sub Threshold Slope (SS) and Electric …
Published in Journal of Semiconductor Devices and Circuits · Vol. 5, Issue 3, 2018 · pp. 1–6 Read article
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Comparative Study of Symmetric and Asymmetric Oxide Double Gate Junction less FET
Abstract: we carry out the performance of symmetric oxide (HfO2+HfO2) and asymmetric oxide (SiO2+HfO2) n-type junction less field-effect transistor (JLFET) based on two- dimensional Poisson equation. This study is accomplished by simulating a symmetric and asymmetric double gate JLFET on Sentaurus, Technology Computer Aided Design (TCAD) simulator for Silicon (Si) material at room temperature and varying temperature in between 300-360 k. Based on device simulation we find that the asymmetric oxide …
Published in Journal of Semiconductor Devices and Circuits Read article
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Nanoelectronics Based on Carbon Nanotubes
Abstract: Nanoelectronics, the study and application of electronic components and systems at the nanometer scale, plays a pivotal role in advancing modern technology toward faster, smaller, and more energy-efficient devices. Among the various nanomaterials explored for these applications, carbon nanotubes (CNTs) have emerged as one of the most promising candidates due to their exceptional electrical conductivity, mechanical strength, and thermal stability. This project report presents an in-depth exploration of the role …
Published in Journal of Nanoscience, NanoEngineering & Applications · Vol. 15, Issue 3, 2025 · pp. 40–53 Read article
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Ferroelectric Materials for Next-Generation Non-Volatile Memory Applications
Abstract: The continuous scaling of conventional memory technologies is increasingly constrained by limitations in power consumption, speed, endurance, and integration density. As data-intensive applications such as artificial intelligence, Internet of Things, and edge computing demand fast and energy-efficient memory solutions, alternative non-volatile memory technologies have gained significant attention. Ferroelectric materials, characterized by their reversible spontaneous polarization, offer a promising pathway toward next-generation non-volatile memory due to their intrinsic non-volatility, low operating …
Published in Journal of Microelectronics and Solid State Devices · Vol. 13, Issue 1, 2026 · pp. 1–9 Read article
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Machine Learning Assisted Optimization of Nanoscale MOSFET Parameters Using TCAD Simulation
Abstract: This paper presents a machine learning (ML) assisted framework for the multi-objective optimization of nanoscale bulk n-channel metal-oxide-semiconductor field-effect transistors (nMOSFETs) with a 10 nm physical gate length, high-k HfO₂ gate dielectric, and TiN metal gate. Technology computer-aided design (TCAD) simulations employing drift-diffusion transport, Shockley-Read-Hall recombination, Lombardi mobility degradation, and density- gradient quantum correction models are used to generate a parametric dataset of 2,400 device configurations spanning gate length (L), …
Published in Journal of Microelectronics and Solid State Devices · Vol. 13, Issue 1, 2026 · pp. 10–19 Read article
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A Review of Electrical Conduction, Optical Sensing, and Semiconductor Device Innovations
Abstract: Electrical conduction and semiconductor device technologies form the backbone of modern electronic and sensing systems. This review presents a comprehensive analysis of conduction mechanisms across different materials, including conductors, semiconductors, and insulators, with particular emphasis on charge carrier behavior, resistivity, and energy band structures. The study highlights how variations in material properties and external conditions influence electrical performance and device efficiency. The paper further explores advancements in semiconductor devices, focusing …
Published in Journal of Semiconductor Devices and Circuits · Vol. 13, Issue 1, 2026 · pp. 10–18 Read article