STM Journals Peer-reviewed research from Consortium e-Learning Network

Journal of VLSI Design Tools and Technology

Quantum Behavior of Charge Carriers in a Symmetrical Double Gate MOSFET

  1. Madhu Kushwaha
  2. B. Prasad
  3. A. K. Chatterjee

Abstract

Our earlier work on modeling of single gate n-channel metal oxide semiconductor field effect transistor (MOSFET) has been extended to discuss the quantum behavior of charge carriers in symmetrical double gate (DG) MOSFET. The potential profile in the channel region of DG MOSFET has been obtained in parabolic approximation. The parabolic potential facilitates analytical expression for electric field. The appropriate Schrodinger’s equation has been solved to obtain wave functions in the silicon film of DG MOSFET using triangular potential well approximation. The obtained wave function is useful for the understanding the behavior of DG MOSFETs.
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