1 publication

• Published Subscription 26 May 2021

  Quantum Behavior of Charge Carriers in a Symmetrical Double Gate MOSFET

  By Madhu Kushwaha, B. Prasad, A. K. Chatterjee

  Abstract: Our earlier work on modeling of single gate n-channel metal oxide semiconductor field effect transistor (MOSFET) has been extended to discuss the quantum behavior of charge carriers in symmetrical double gate (DG) MOSFET. The potential profile in the channel region of DG MOSFET has been obtained in parabolic approximation. The parabolic potential facilitates analytical expression for electric field. The appropriate Schrodinger’s equation has been solved to obtain wave functions in …

  Published in Journal of VLSI Design Tools and Technology · Vol. 11, Issue 1, 2021 · pp. 17–28 Read article →