Performance Improvement of Nano Field Effect Transistor Based on Zinc Oxide Semiconducting Materials – a Critical Analysis

Dr. Ram Chhavi Sharma; Vasundhara Yadav; Komal Yadav

Abstract

New semiconductor materials and new shapes for contemporary nanostructured semiconductor devices, like nanowires, have been researched as a result of advancements in transistor technology. Because of their unique electrical, photonic, and sensing capabilities, nanowires (NWs) constructed of various semiconductor material systems (gallium arsenide, zinc oxide, etc.) have been the subject of intense research over the past 20 years. Due to its distinctive properties, including high electron mobility, high crystalline quality, wide direct band gap of 3.365 eV at room temperature and 3.441 eV at absolute zero, high breakdown voltage, large saturation velocity, large exciton binding energy in comparison to gallium nitride (60 eV versus 25 eV for gallium nitride), low temperature epitaxial growth, wet etching, and top-down fabrication techniques, zinc oxide has attracted significant research efforts.Additionally, it exhibits a strong propensity to develop into nanostructured forms and is a promising semiconductor material with a variety of intriguing applications.The improvement in performance of FETs is examined critically in the current paper. This improvement is related to elements including increased density, decreased surface roughness, less leakage current, and fewer interface flaws like oxygen vacancies, interstitials, and dislocations, larger crystalline/grain size, passivation, source/drain electrode contact resistance, and interfacial trap density at the gate oxide/ZnO interface

Abstract

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