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16 articles for “transistor scaling”
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A Comprehensive Review of FinFet Technology: Advantages, Challenges and Applications
Abstract: This has been complemented by improvements on the new layers that have surpassed the manufactures planar transistor by the new FinFET (Fin Field-Effect Transistor), which enhance modern demands on high performance, small size and low power consumption. This review is for a timely information on the latest development on FinFET technology, such as by curbing leakage currents by 50 percent and enhancing its speed by 30 percent proving that FinFETs …
Published in Journal of Semiconductor Devices and Circuits · Vol. 11, Issue 3, 2024 · pp. 1–12 Read article
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A Comprehensive Review on FinFet Technology : Advantages, Challenges and Applications
Abstract: New devices and enhanced layers have been developed, specially the FinFET (Fin Field-Effect Transistor) which is considerably superior to the planar transistor because of its ability to meet the new demands of systems for high-performance, low-power, and dimensions reduction. Some of the recent developments in FinFETs mentioned in this review include a reduction of leakage currents by 50% and an enhancement of the speed by 30%; thus, FinFETs remain fundamental …
Published in Journal of Semiconductor Devices and Circuits Read article
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Development of Polymer Based SRAM Cell with Enhance Low Power Performance
Abstract: Low-power memory technologies are in high demand with the rapid growth of portable electronics and energy-efficient computing systems. Static random-access memory (SRAM) plays a crucial role in processors, cache memories, and system-on-chip applications due to their speed and reliability. Static Random Access Memory (SRAM) is typically implemented using complementary MOS (CMOS) technology, which integrates both PMOS (P-channel Metal–Oxide–Semiconductor) and NMOS (N-channel Metal–Oxide–Semiconductor) transistors. However, as technology scales to deep submicron …
Published in Journal of Polymer & Composites · Vol. 14, Issue 1, 2026 · pp. 1439–1448 Read article
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Performance and Analysis of 6T, 8T & 10T SRAM Cell in 28nm Technology
Abstract: Technology scaling into deep sub-micron regimes has significantly increased the design challenges of Static Random Access Memory (SRAM), particularly at the 28 nm technology node. As transistor dimensions shrink, SRAM cells become more vulnerable to stability degradation, leakage current, process variations, and reduced noise margins, which adversely affect overall memory performance and reliability. The conventional 6T SRAM cell remains widely used due to its compact structure and high storage density; …
Published in Journal of VLSI Design Tools and Technology · Vol. 16, Issue 2, 2026 Read article
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Emerging Paradigms in Parallel Computing: Trends and Innovations
Abstract: Parallel computing is at an inflection point with revolutionary new paradigms and technologies. The goal of this paper is to survey the recent trend in parallel computing from architecture, programming model and applications. Mahajan cites a litany of architectural developments such as heterogeneous computing systems with integrated graphics processing unit/central processing unit ; the emerging promise from quantum and neuromorphic architectures (please see later); advances in packing transistors using novel …
Published in Recent Trends in Parallel Computing · Vol. 12, Issue 1, 2025 · pp. 39–43 Read article
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Delay Analysis of HS-14T 45nm CMOS SRAM with Different SRAM Techniques for Improvement in Speed
Abstract: This paper presents a novel HS-14T design aimed at significantly improving read and write delays compared to conventional 6T and other memory cells RHRD-12T, SEUH-12T, and NHRC-14T. As technology scales, the demand for faster and more stable memory cells becomes increasingly critical. Our proposed HS-14T incorporates additional transistors to enhance stability and reduce access times, resulting in notable performance gains. Comprehensive simulations reveal that the HS-14T SRAM cell substantially reduces …
Published in Journal of VLSI Design Tools and Technology · Vol. 14, Issue 2, 2024 · pp. 1–13 Read article
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Transforming IoT Connectivity Through VLSI Technology
Abstract: Device communication has been completely transformed by the emergence of the Internet of Things (IoT), and very large-scale integration (VLSI) has been essential to this change. The development of small, energy-efficient devices that are essential to IoT applications is made possible by VLSI technology, which allows thousands to millions of transistors to be integrated on a single chip. By enabling higher processing capabilities and seamless connectivity, VLSI not only enhances …
Published in International Journal of VLSI Circuit Design & Technology · Vol. 2, Issue 2, 2024 · pp. 1–11 Read article
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VLSI – Power, Expansion and Versatility
Abstract: The evolution of Very Large-Scale Integration (VLSI) technology has significantly transformed the landscape of modern electronics, driving innovations across diverse industries. This article explores the key attributes of VLSI, focusing on its power, expansion, and versatility. VLSI's power lies in its ability to integrate thousands to millions of transistors on a single chip, enabling the development of high-performance, energy-efficient devices. The expansion of VLSI technology is exemplified by its application …
Published in International Journal of VLSI Circuit Design & Technology · Vol. 3, Issue 1, 2025 · pp. 1–8 Read article
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A Study on Polymer-Based FinFET Applications and Logic Circuit Implementation with FinFET
Abstract: Nano devices play a crucial role in the semiconductor industry and can work as the solution for the problems like scaling of MOSFET. The FinFET can serve as the substitute of bulk CMOS in nanoscale. It mainly consists of two gate terminals which can be either shorted or kept independent.The shorted gate (SG-FinFET) configuration provides higher Ion and Ioff whereas the Independent Gate (IG-FinFET) configuration reduces the transistor count and …
Published in Journal of Polymer & Composites · Vol. 13, Issue 1, 2025 · pp. 312–340 Read article
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Silicon Symphony: The Science of Semiconductors Circuits
Abstract: Modern electronics are built on the foundation of semiconductor circuits, which precisely and efficiently control the flow of electrical impulses. This article takes a look at the underlying physics of semiconductor materials and how their unique electrical properties allow the design and functioning of diodes, transistors and integrated circuits. This study links microscopic scientific principles to the behaviour of real circuits. It considers essential concepts such as charge carriers, doping …
Published in International Journal of Solid State Innovations & Research · Vol. 4, Issue 1, 2026 Read article
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Nanoelectronics Based on Carbon Nanotubes
Abstract: Nanoelectronics, the study and application of electronic components and systems at the nanometer scale, plays a pivotal role in advancing modern technology toward faster, smaller, and more energy-efficient devices. Among the various nanomaterials explored for these applications, carbon nanotubes (CNTs) have emerged as one of the most promising candidates due to their exceptional electrical conductivity, mechanical strength, and thermal stability. This project report presents an in-depth exploration of the role …
Published in Journal of Nanoscience, NanoEngineering & Applications · Vol. 15, Issue 3, 2025 · pp. 40–53 Read article
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Physics of Semiconductors and Electronic Circuits
Abstract: This study talks about the basic ideas behind semiconductor physics and how important they are for making and running modern electronic circuits. It starts with a look at intrinsic and extrinsic semiconductors, going into how charge carriers move, energy band theory, and how doping affects how well the electricity flows. Next, the conversation turns to semiconductor devices like diodes, bipolar junction transistors (BJTs), and field-effect transistors (FETs). The focus is …
Published in Journal of Semiconductor Devices and Circuits · Vol. 12, Issue 2, 2025 · pp. 9–17 Read article
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The Role of Majority Functions in Enhancing Full Subtractor Performance in High-Density Logic Circuits
Abstract: In the present trend of very large-scale integration (VLSI) technology, implementing a Boolean function with the fewest number of gates (logic) has always been important. Low power design strategies now provide much more benefits than in the past. Performance, affordability, and dependability may be key issues in this area of technology design. Power dissipation is now recognized as a crucial component in the development of competitive market areas such wireless …
Published in Journal of Semiconductor Devices and Circuits · Vol. 11, Issue 2, 2024 Read article
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A Majority Function Based Full Subtractor
Abstract: In the present landscape of very large-scale integration (VLSI) technology, the imperative to implement Boolean functions with minimal gate count remains a cornerstone of efficient circuit design. This pursuit has only grown more critical with the evolution of low-power design strategies, which now offer significantly enhanced benefits compared to traditional approaches. The trifecta of performance, affordability, and dependability continue to drive innovation in this field, shaping the trajectory of technological …
Published in Research & Reviews : Journal of Physics · Vol. 13, Issue 2, 2024 · pp. 8–14 Read article
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Ferroelectric Materials for Next-Generation Non-Volatile Memory Applications
Abstract: The continuous scaling of conventional memory technologies is increasingly constrained by limitations in power consumption, speed, endurance, and integration density. As data-intensive applications such as artificial intelligence, Internet of Things, and edge computing demand fast and energy-efficient memory solutions, alternative non-volatile memory technologies have gained significant attention. Ferroelectric materials, characterized by their reversible spontaneous polarization, offer a promising pathway toward next-generation non-volatile memory due to their intrinsic non-volatility, low operating …
Published in Journal of Microelectronics and Solid State Devices · Vol. 13, Issue 1, 2026 · pp. 1–9 Read article
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The Next Era of Solid-State Innovation: Beyond Silicon
Abstract: The semiconductor industry is getting close to the physical and economic boundaries of silicon-based technology. A new era of solid-state innovation is beginning. Beyond Silicon: The Next Era of Solid-State Innovation looks at the materials, device layouts, and manufacturing methods that are about to change the way electronics and energy work. The article talks about improvements in wide- and ultra-wide-bandgap semiconductors, two- dimensional materials, and quantum and neuromorphic systems that …
Published in International Journal of Solid State Innovations & Research · Vol. 3, Issue 2, 2025 · pp. 19–23 Read article