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Journal of Semiconductor Devices and Circuits Review Article

A Comprehensive Review on FinFet Technology : Advantages, Challenges and Applications

  1. Joel Joseph ✉
  2. Shiv Prajapati

Abstract

New devices and enhanced layers have been developed, specially the FinFET (Fin Field-Effect Transistor) which is considerably superior to the planar transistor because of its ability to meet the new demands of systems for high-performance, low-power, and dimensions reduction. Some of the recent developments in FinFETs mentioned in this review include a reduction of leakage currents by 50% and an enhancement of the speed by 30%; thus, FinFETs remain fundamental for the integrated circuits at 7.00 nm and below. The review also concentrates on how FinFET can cut dynamic power usage by as much as 40.00 percent by using lower supply voltage, which makes functionality in high-performance and portable functions possible. Also, it reviews effects of fabrication materials such as high-k dielectrics and silicon-germanium (SiGe) on the device’s performance and end-use reliability. The review finishes with brief information on FinFET applications including processors and IoT systems and the future problems entering into the extreme ultraviolet lithography and advanced fabrication.

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