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27 articles for “static power dissipation”
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Power Estimation of MAC Block for Artix 7 FPGA using Regression Technique
Abstract: This paper presents the power estimation approach using suitable machine learning technique. Artix-7 FPGA has been chosen as target FPGA (Field Programmable Gate Arrays) platform for understanding the methodology of power estimation. There are various approaches of power estimation for FPGAs have been given in the literature viz. probabilistic, statistical, and LUT based etc. However, this paper discussed a supervised machine learning approach namely curve fitting and regression analysis. The …
Published in Journal of Microcontroller Engineering and Applications · Vol. 8, Issue 3, 2021 · pp. 27–37 Read article
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Analysis and Characterization of Circuits for Leakage Power Reduction at Sub-50 nm in CMOS Circuits
Abstract: This paper analyzes various techniques to decrease leakage power in complementary metal oxide semiconductor (CMOS) very large scale integration (VLSI) circuits, because due to continuous scaling of CMOS technology there is improvement in speed of semiconductor devices and the side effect of this scaling is leakage power. With the development of technology in CMOS VLSI Circuit, length of transistors has been reduced and speed of operation is increasing simultaneously. As …
Published in Journal of Electronic Design Technology · Vol. 13, Issue 2, 2022 · pp. 11–22 Read article
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Review Paper on Static and Dynamic Power Dissipation of Novel CMOS SRAM Cell
Abstract: VLSI design is persistently demanding for ultra-low power efficient and data stability solution. This review paper studies and analyses about various techniques to reduce leakage and dynamic power dissipation. Sleepy keeper approach, super cutoff mode, NTC method, dual-threshold approach, quiet-bitline and single bitline architecture are discussed for the power reduction. Sleepy keeper, NTC and dual-threshold approach are focused for high data stability and performance. Quite bitline architecture SRAM saves overall …
Published in Journal of VLSI Design Tools and Technology · Vol. 6, Issue 1, 2016 · pp. 73–77 Read article
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Design of Decoder Using Domino Logic Circuit for VLSI
Abstract: Dissipation of power from a circuit is the major issue in the design of any VLSI circuit, which decreases the life span of a device/system. NMOS and PMOS circuits are very slow while switching the state from low to high. The speed of the circuit can be increased by decreasing resistance. This process in turn increases the static power dissipation. So, because of these disadvantages, CMOS circuits are used in …
Published in Journal of VLSI Design Tools and Technology Read article
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Design of Decoder Using Domino Logic Circuit for VLSI
Abstract: Dissipation of power from a circuit is the major issue in the design of any VLSI circuit, which decreases the life span of a device/system. NMOS and PMOS circuits are very slow while switching the state from low to high. The speed of the circuit can be increased by decreasing resistance. This process in turn increases the static power dissipation. So, because of these disadvantages, CMOS circuits are used in …
Published in Journal of VLSI Design Tools and Technology · Vol. 11, Issue 3, 2021 · pp. 42–54 Read article
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Design and Implementation of Low Power and Area Efficient Sub Threshold Level Shifter Using 16 nm CMOS Technology
Abstract: An efficient method of modifying subthreshold voltages is proposed here. As an alternative to static power dissipation, the suggested design allows for charging of internal nodes through VDDH. The force of the pull-down mechanism may be increased by connecting a second auxiliary circuit. The transition energy for input frequencies between 1 and 5 MHz is 84 fJ, the propagation delay is 46 ns, the dynamic power dissipation is 0.3 mW, …
Published in International Journal of VLSI Circuit Design & Technology · Vol. 1, Issue 1, 2023 · pp. 16–24 Read article
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Edge-detecting Technique to Increase Slew Rate for Differential Amplifier
Abstract: This paper addresses a very compact low-power class-B buffer amplifier topology for large-size liquid crystal display applications. With enhanced slew rate, Edge-Detecting technique the proposed buffer achieves high-speed driving performance, draws a small quiescent current during static operation. The proposed SRE design is achieved more than 68 times improvements in the slew rate without significant increase of static power dissipation. Post-layout simulations show that the proposed buffer can drive a …
Published in Journal of Electronic Design Technology · Vol. 3, Issue 1-3, 2012 · pp. 49–58 Read article
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Cluster Based Sleep Transistor Approach for Low Power 6T SRAM Cell
Abstract: The demand of high density VLSI circuits has been increasing as the size of ICs is becoming small day by day. It has been seen that, to reduce active power dissipation in memory, the supply voltage reduction is necessary. Lowering the supply voltage is one of the most straightforward and effective ways to suppress the energy consumption because reducing the supply voltage could reduce the dynamic power and leakage power …
Published in Journal of VLSI Design Tools and Technology · Vol. 6, Issue 1, 2016 · pp. 41–48 Read article
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Suitability of Various Low Power Strategies for SRAM Design: A Survey
Abstract: In very high performance system on chip, static power dissipation plays a dominant role compared to dynamic component and it increases with technology scaling. Scaling of bulk MOSFET faces more and more challenges at 45 nm technology or below by producing short channel effect (SCE) which leads to increase in leakage current. An obstacle with bulk MOSFET at 45 nm or below gate length includes SCE, subthreshold leakage and gate …
Published in Journal of Semiconductor Devices and Circuits · Vol. 2, Issue 1, 2015 · pp. 6–13 Read article
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A Novel Design for Power Reduction in Arithmetic Circuits using MTCMOS Technology
Abstract: In CMOS logic circuits, the reduction in the threshold voltage due to voltage scaling leads to increase in the subthreshold leakage current and hence static power dissipation. Although power consumption is important for modern VLSI design, operation speed and occupied area are still the main requirements of the VLSI design. Multi threshold voltage CMOS (MTCMOS) technology is a good solution which provides a high performance and low-power design without any …
Published in Journal of VLSI Design Tools and Technology · Vol. 4, Issue 1, 2014 · pp. 1–7 Read article
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Power Reduction at 90 nm through Circuit Level Modification
Abstract: Along with dynamic power, leakage power has turned out to be a major contributor to the overall power consumption in VLSI circuits. This problem is even more stringent in nano-scale dimension devices according to the International Technology Roadmap for Semiconductors (ITRS). As the technological advancements demand more function per device with a significant shrinking in device dimension, heat per unit area is also escalating at an elevated rate. This turns …
Published in Journal of VLSI Design Tools and Technology · Vol. 2, Issue 1-2-3, 2012 · pp. 101–107 Read article
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Dynamic Comparators for Very High-Speed ADC’s
Abstract: The need for ultra- low power and space economical analog –to- digital converters (ADCs) is pushing towards the utilization of low voltage CMOS dynamic comparators to maximise the facility potency and speed. the traditional dynamic comparators have options like high input ohmic resistance, no static power dissipation and sensible strength against noise and couple. the downside is that giant numbers of transistors are accustomed minimize the offset, therefore the speed …
Published in Recent Trends in Fluid Mechanics · Vol. 8, Issue 3, 2021 · pp. 32–45 Read article
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Implementation of Different Low Power Techniques on CMOS Inverter and NAND Circuits
Abstract: The growth in technology has increased the usage of additional components on a single chip. This increased number of components on a single chip increases the significant amount of power dissipation and this causes the major challenge for the today’s circuit designers. There are several techniques in VLSI field which help to reduce power dissipations. This paper has analytical analysis of different low power techniques on CMOS inverter and NAND …
Published in Journal of VLSI Design Tools and Technology · Vol. 9, Issue 1, 2019 · pp. 38–43 Read article
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Characterization of a Single-Ended Schmitt-Trigger based 9T SRAM Cell
Abstract: Data stability is a prime concern in submicron regime. This work presents a single-ended Schmitt- trigger (ST) based 9T static random-access memory (SRAM) cell. Proposed design provides enhanced read stability as it uses ST based inverters. Low power dissipation is achieved by employing just a single bit line. Simulation is carried out on gpdk 180nm CMOS technology on Cadence. Proposed design offers 1.36x improvement in read static noise margin (RSNM) …
Published in Journal of Microelectronics and Solid State Devices · Vol. 6, Issue 2, 2019 · pp. 26–31 Read article
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Development of Polymer Based SRAM Cell with Enhance Low Power Performance
Abstract: Low-power memory technologies are in high demand with the rapid growth of portable electronics and energy-efficient computing systems. Static random-access memory (SRAM) plays a crucial role in processors, cache memories, and system-on-chip applications due to their speed and reliability. Static Random Access Memory (SRAM) is typically implemented using complementary MOS (CMOS) technology, which integrates both PMOS (P-channel Metal–Oxide–Semiconductor) and NMOS (N-channel Metal–Oxide–Semiconductor) transistors. However, as technology scales to deep submicron …
Published in Journal of Polymer & Composites · Vol. 14, Issue 1, 2026 · pp. 1439–1448 Read article
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Performance Analysis of Fe/SiO2/Fe MTJ and Ni/Al2O3/Ni MTJ-based Magnetoresistive Random Access Memories (MRAMs)
Abstract: This paper reports the first principle simulations of Fe/SiO2/Fe and Ni/Al2O3/Ni magnetic tunnel junctions (MTJs). A performance analysis has been done based upon the device-level simulations of the two magnetic tunnel junctions followed by the circuit level simulations of magnetoresistive random access memory (MRAM) cell operating with the two MTJs respectively. From the device-level simulations, the two MTJs have been compared with regard to the bias dependence of TMR ratios, …
Published in Journal of VLSI Design Tools and Technology · Vol. 2, Issue 1-2-3, 2012 · pp. 92–100 Read article
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A Circuit Approach for CMOS VLSI Circuit Leakage Power Reduction
Abstract: Despite the fact that scaling CMOS technology boosted speed, leakage currents always remained an issue. The issue has gotten worse as the scaling has gone into the UDSM (ultra-deep-submicron) range. In order for the circuit to function effectively, these unwanted leakage currents must be reduced to a minimum. It is challenging to create these leakage-free nano-scale CMOS circuits. In this work, the issue of leakage power is addressed, which occurs …
Published in Research & Reviews: A Journal of Embedded System & Applications · Vol. 10, Issue 3, 2022 · pp. 7–18 Read article
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Efficient Analysis and Minimization of Glitches using Threshold Swapped Combinational Clock Gating
Abstract: Nowadays design of electronic circuits to meet requirements like high speed, better functionality and low power is a tedious task. Power dissipation in any circuit comprises mainly two components: static power and dynamic power. The dynamic power heavily depends on the switching activity of the circuit. During the transistor switching transitions some spikes may occur, which are called as glitches. These glitches contribute 20–70% of the dynamic power and 20% …
Published in Journal of VLSI Design Tools and Technology · Vol. 5, Issue 2, 2015 · pp. 29–37 Read article
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Design of 10T SRAM Cell for Low Power and High Speed Applications
Abstract: AbstractThis paper presents techniques for designing a low-power and higher read speed Static Random Access Memory (SRAM) cell. The cell achieves low power dissipation due to Virtual Ground (VGND) scheme and provides higher read performance due to Forward Body Biasing (FBB). Design metrics of the proposed SRAM cell was studied and compared with that of CON 6T, CON D10T, TG 8T, 9T, and ST-10T SRAM cells. It was observed that …
Published in Journal of Electronic Design Technology · Vol. 8, Issue 2, 2017 · pp. 16–27 Read article
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A 32-Bit Booth Multiplier Design Using GDI Logic Style
Abstract: Gate diffusion input (GDI) is the newest technology of designing a low-power digital combinational circuit. This logic allows reducing power dissipation, delay and area of any digital logic circuit. The gate diffusion input logic allows implementation of a wide range of any complex logic function. These functions can be realized using only two transistors. This technique is preferred for designing fast using less number of transistors while improving logic level …
Published in Trends in Electrical Engineering · Vol. 5, Issue 3, 2015 · pp. 1–5 Read article