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110 articles for “conduction band”
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Non-linear Integral Equations Ideal Solar Cells Analysis with One and Two Intermediate Bands
Abstract: An innovative and groundbreaking theory is proposed by using intermediate bands within the energy gap of the semiconductor in order to increase the efficiency of solar cells. Consequently, photons with energy less than the band gap may contribute to the output device by using the intermediate band or bands, in order to jump to the conduction band. This problem is reduced to the solution of non-linear integral equations and for …
Published in Journal of Alternate Energy Sources & Technologies · Vol. 4, Issue 2, 2013 · pp. 8–15 Read article
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DC and RF Analysis on Specific Quantum-Well Heterostructures
Abstract: Polarization-graded AlGaN back-barrier nano-layer is introduced in high electron mobility transistor (HEMT) structure to have an improved drain current characteristics and better radio-frequency performance, using two-dimensional drift-diffusion simulation by SILVACO-ATLAS physical simulator. In this work, the AlGaN/AlN/GaN/AlGaN/GaN double heterojunction HEMT structure is optimised with graded back barrier layer to study the DC and RF performances. Investigation of this structure with graded back barrier layer is the novelty of this work. …
Published in Journal of Semiconductor Devices and Circuits · Vol. 9, Issue 1, 2022 · pp. 1–13 Read article
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Simulation Study of Tapered Shape FinFET
Abstract: During recent years, nonplaner tri-gate (TG) field-effect transistors (FETs) such as FinFETs have been extensively studied for the enhancement of electrostatic control and suppression of short-channel effects (SCEs) in the sub50 nm regime. As the device scaled, it is observed that the shape of the rectangular FinFET becomes tapered shape. This paper presents the design and analysis of a tapered-shaped FinFET. By varying the sidewall inclination angle of a rectangular …
Published in Journal of VLSI Design Tools and Technology · Vol. 6, Issue 1, 2016 · pp. 21–31 Read article
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Gallium Nitride based HEMTs in Nano-Scale Regime
Abstract: AbstractIn this work, a maximum drain current of 557 mA is achieved by the simulated structures of double-heterojunction HEMTs using the SILVACO-ATLAS software tool. The drain current is found to be higher at shorter gate length. The drain current is observed as higher at larger aluminium mole fraction. The drain current is also higher at larger thickness of AlGaN barrier layer. Again, the drain current is higher at larger doping …
Published in Journal of Microelectronics and Solid State Devices · Vol. 5, Issue 3, 2018 · pp. 11–21 Read article
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Surface Properties of Magneto Plasmons on the Surface of Carbon Nanotubes (CNTs)
Abstract: The theoretical study of Raman Spectroscopy of CNTs showed that on increasing the diameter of both semiconducting and metallic carbon nanotubes, the energy separation between valence band and conduction band decreases. In this review paper, the author also compares the obtained results with others and it is found that the result is in good agreement but the magnitude is slightly less. The experimental result of Raman Radial Breathing Mode (RBM) …
Published in Research & Reviews : Journal of Physics · Vol. 9, Issue 2, 2020 · pp. 1–5 Read article
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Detailed Study On Physical Properties Of Silicon Nitride Films Deposited By Plasma Enhanced Chemical Vapour Deposition System
Abstract: Amorphous silicon nitride films have been deposited by radio frequency plasma enhanced chemical vapor deposition (RF-PECVD) technique using silane (SiH4) and ammonia (NH3) as source gases. Investigations have been made in detail to understand the influence of process parameters such as RF power, substrate temperature, gas flow ratio, working pressure etc, on the optical, electrical and surface properties in order to obtain dielectric Si3N4 films for semiconductor device applications. Amorphous …
Published in Journal of Thin Films, Coating Science Technology & Application · Vol. 3, Issue 1, 2016 · pp. 1–8 Read article
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Structural and Optical Properties Investigation of Sn doped ZnTe Thin Film
Abstract: To increase the efficiency of a single-junction solar cell the Intermediate Band Solar Cell (IBSC) is proposed, where, IBSC designed to provide extra optical transitions that enable sub-band gap energy photons to participate in current generation through pumping of electrons from the valence band (VB) to the Intermediate Band (IB) and further from the IB to the conduction band (CB) hence it provide high conversion efficiency. Thin film of undoped …
Published in Nano Trends – A Journal of Nano Technology & Its Applications · Vol. 21, Issue 1, 2019 · pp. 13–20 Read article
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Design and Performance of Semiconductor-Biosensor
Abstract: In this work, a high electron mobility transistor (HEMT) based biosensor is designed to detect the virus-protein. In this work, all the simulation-studies are carried out in the SILVACO-ATLAS physical simulator using the following models: Shockley Read Hall (SRH), band gap narrowing, Auger recombination, and Fermi Dirac statistics. Newton trap numerical solver is used in the device simulation. Conduction band engineering of the biosensor is studied. DC and RF properties …
Published in Journal of Semiconductor Devices and Circuits · Vol. 8, Issue 2, 2021 · pp. 1–13 Read article
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Novel Characteristics of GaN based Nanoelectronic Double-Heterojunction HEMTs to Establish a Solid-State-Electronics Laboratory
Abstract: The drain characteristics are investigated with respect to electrical variables (drain voltage, gate voltage) and structural parameters of high electron mobility transistors (HEMTs). Total 10526 individual simulation-outputs are reported in this work. The maximum drain current of 553 mA is achieved by the simulated structures of double-heterojunction HEMTs using the SILVACO-ATLAS software tool. The drain current is higher at shorter gate length. The drain current is higher at larger aluminium …
Published in Journal of Semiconductor Devices and Circuits · Vol. 4, Issue 3, 2017 · pp. 11–20 Read article
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Electrical Characteristics of Nanoelectronic Double-Heterojunction High Electron Mobility Transistors
Abstract: AbstractIn this work, a maximum drain current of 554 mA is achieved by the simulated structures of double-heterojunction HEMTs using the SILVACO-ATLAS software tool. The drain current is found to be higher at shorter gate length and at larger aluminium mole fraction. The drain current is also higher at larger thickness of AlGaN barrier layer and at larger doping concentration of AlGaN barrier layer.In this work, the formation of 2-DEG …
Published in Journal of Semiconductor Devices and Circuits · Vol. 7, Issue 1, 2020 · pp. 18–28 Read article
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Interface Engineering of Graphene Multi-Junction InGaP/GaAs/InGaAs/Ge Solar PVC
Abstract: AbstractThe main impediment faced by solar Photo-Voltaic Cell (PVC) is the excitation of charge carriers by high and low energy photons to make them reach the conduction band as this superintends the output device current. To enhance the device current, intermediate engineering of solar PVC is the most prominent strategy. An Inter-Mediate Layer (IML) serves as a spectrally selective layer between the muti-junctions for tandem solar cell. This research work …
Published in Trends in Opto-electro & Optical Communication · Vol. 8, Issue 1, 2018 · pp. 1–7 Read article
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Novel Effect of Gate Length on the Electrical Characteristics of Nanoelectronic Double-Heterojunction HEMTs with the Circuit Symbols and Load Line to Configure the Common-Source Amplifiers in Analog Electronics
Abstract: Total 3566 individual simulation-outputs are reported in this work. The linear region and saturation region in each drain characteristic curve of nanoelectronic AlGaN/GaN/AlGaN double-heterojunction high electron mobility transistors (HEMTs) are clearly shown. In this work, we have obtained the maximum drain current of 389 mA using these HEMTs. The investigations on the dependence of drain current with respect to gate length in these double-heterojunction HEMTs is a novelty of this …
Published in Research & Reviews: A Journal of Embedded System & Applications · Vol. 5, Issue 2, 2017 · pp. 8–18 Read article
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Report on the Effects of Mole Fraction, Doping Concentration, Gate Length and Nano-Layer Thickness to Control the Device Engineering in the Nanoelectronic AlGaN/GaN HEMTs at 300 K to Enhance the Reputation of the NIT Arunachal Pradesh
Abstract: In this work, we report total 20748 individual simulation-outputs according to the performed simulation-studies on the Nanoelectronic AlGaN/GaN high electron mobility transistors (HEMTs). This series of simulation work has been performed using the SILVACO-ATLAS software tool. In this work, the drain characteristics is investigated with respect to the Aluminium mole fraction, doping concentration, drain voltage, gate voltage, gate length and thickness of the AlGaN nano-layer. The investigation on the effect …
Published in Nano Trends – A Journal of Nano Technology & Its Applications · Vol. 19, Issue 1, 2017 · pp. 15–47 Read article
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Optimization of i-Layer of a-Si: H p–i–n Solar Cell in an Indigenously Developed PECVD System
Abstract: Single-junction hydrogenated amorphous silicon solar cells have been successfully fabricated using indigenously developed radio frequency-plasma enhanced chemical vapor deposition (RF-PECVD) technique. The software-controlled PECVD system enables deposition and optimization of layers and solar cell device using a cluster 5 process chambers. In the present work, several experiments have been carried out by varying the critical process parameters in order to optimize the i-layers for obtaining efficient hydrogenated amorphous silicon (a-Si:H) …
Published in Journal of Instrumentation Technology & Innovations · Vol. 5, Issue 3, 2015 · pp. 32–36 Read article
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Impact of Barrier Thickness and Height on the Current-Voltage (I-V) Characteristics of GaAs/Ga1-xAlxAs Quantum Cascaded Laser
Abstract: Quantum Cascaded Laser (QCL) physics is different from a diode laser. In diode, laser transitions occur between the conduction band and valance band of the materials whereas in quantum-cascade laser transitions occur between states within a single quantum well. This paper presents the effect of barriers thickness on the I-V characteristics of GaAs/Ga1-xAlxAs based QCL. The calculated I-V characteristics findings predict the output current modulation capability of the proposed GaAs/Ga1-xAlxAs …
Published in Nano Trends – A Journal of Nano Technology & Its Applications · Vol. 21, Issue 1, 2019 · pp. 6–12 Read article
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Electrical Characteristics and Probable Applications of High Electron Mobility Transistors for Very Large Scale Integration Circuits in Microelectronics and Nanoelectronics Industry
Abstract: In our work, a maximum drain current of 556 mA is achieved by the simulated structures of double-heterojunction high electron mobility transistors (HEMTs) using the SILVACO-ATLAS physical simulator. According to the results, drain current is higher at shorter gate length. Also, drain current is higher at larger aluminium mole fraction. Further, drain current is higher at larger thickness of AlGaN barrier layer. Again, drain current is found as higher at …
Published in Nano Trends – A Journal of Nano Technology & Its Applications · Vol. 22, Issue 2, 2020 · pp. 8–14 Read article
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Study of Effect of Various Dielectrics on the Performance of Electromagnetic Bandgap Based Microstrip Patch Antenna Structure
Abstract: Here the effect of various dielectrics on the performance of microstrip patch antenna with underlying electromagnetic bandgap structure is investigated. This unique antenna structure suppresses the surface waves and reflects plane waves with no phase change and thus acts as a perfect magnetic conductor (PMC). Dielectric losses are reduced due to the presence of EBG structure and bandwidth enhancement is observed when compared to the non-EBG structure. The effect of …
Published in Journal of Microwave Engineering and Technologies · Vol. 2, Issue 2, 2015 · pp. 13–18 Read article
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Techniques of Atomic Structure Orbit Potential of The Frequency Characteristics of Silicon Element
Abstract: This study explores the technological applications and material integration of semiconductor materials, with a focus on their electronic properties and practical implementations. The investigation primarily addresses four key objectives: analyzing the electronic band structure and density of states (DOS) of semiconductor materials, evaluating the band alignment in heterojunctions, and integrating these materials into practical technological applications. Using a simplified tight-binding model, we compute and plot the electronic band structure of …
Published in Journal of Thin Films, Coating Science Technology & Application · Vol. 11, Issue 3, 2024 · pp. 16–32 Read article
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Polymer Based Optoelectronics in Clinical Application Treated with Sodium Fluoride and Aqueous Dimethyl Sulfoxide Solutions
Abstract: In polymer science, dimethyl sulfoxide (DMSO) and sodium fluoride (NaF) are frequently combined to dissolve, modify, or treat particular polymers, most notably in the processing of cellulose and the creation of polyvinylidene fluoride (PVDF) membranes. The viscosities, ultrasonic velocities, and sodium fluoride densities of aqueous solutions of dimethyl sulfoxide (DMSO) have been measured at T=303.15, 308.15, 313.15, and 318.15 K. Fluorides (such as NaF or TBAF) help break inter-chain hydrogen …
Published in Journal of Polymer & Composites · Vol. 14, Issue 3, 2026 · pp. 20–29 Read article
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Development and Thermal-Soiling Performance Evaluation of Boron-Nitride Reinforced Polymer Nanocomposite Coatings for Solar Photovoltaic Applications
Abstract: Surface heating, dust buildup, and weakening triggered by ultraviolet (UV) light all have a vast effect on the long-term performance of solar photovoltaic (PV) modules. These issues all lower power conversion efficiency in real-world open-air circumstances. A nanocomposite coating built on fluoropolymer (FEP) that is reinforced with hexagonal boron nitride (h-BN) nanoparticles is invented by this study to enhance thermal dissipation, optical transmission, and resistance to dirt at the same …
Published in Journal of Polymer & Composites · Vol. 14, Issue 2, 2026 · pp. 218–223 Read article