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48 articles for “The transistor”
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An overview of Nanocrystalline Hydrogenated Silicon Thin film Transistor
Abstract: This article elaborates and comprehends an overview on nc-Si:H TFT's, detailing and highlighting the topics like fabrication methodology, properties/stability, modelling, characterization techniques, challenges and futuristic scope/applications.With the growing demands in commercialization of Solar Cells (low-cost photo voltaic devices), Large Area Displays (like OLED’s), Thin film electronics (FPD applications), pixel switches, wearable/flexible electronics and so on, has prompted researchers to develop nc-Si:H TFT's (an alternative solution) which can out perform the …
Published in Nano Trends – A Journal of Nano Technology & Its Applications · Vol. 27, Issue 2, 2025 · pp. 1–23 Read article
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Influence of Dielectric and Active layer Thickness on MgZnO Thin Film Transistor Electrical Characteristics
Abstract: From last decades, Thin Film Transistors Technology uses low-k dielectric material as an insulator. Insulator thickness plays an important role in device dimension. The insulating layer also known as the gate oxide separates the gate electrode from the channel region of the transistor. If the insulating layer is too thin, there is a greater chance that electrons can tunnel through the oxide layer, leading to leakage current. To mitigate this …
Published in Journal of Polymer & Composites · Vol. 11, Issue 5, 2023 · pp. 17–26 Read article
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Improvements in Analog Performance of Dual Metal Gate based Silicon-on-Insulator Junctionless Transistor with Pocket Doped Window
Abstract: This paper elucidates the impact of the pocket doped window on the analog performance of dual metal gate based silicon-on-insulator junctionless transistor (DMG SOIJLT). The analog parameters of the proposed SOIJLT are compared with DMG based conventional SOIJLT. The findings of analog performance comparison reveal that transconductance (gm), transconductance generation factor (TGF), output conductance (gd), output resistance (r0), intrinsic gain (AV), and cut-off frequency (fT) have improved for DMG PD-SOIJLT …
Published in Journal of Microelectronics and Solid State Devices Read article
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Fabrication, Numerical Simulation and Compact Modeling of Ph-BTBT-C10 Organic Thin Film Transistor
Abstract: Flexible and cost-effective electronics have been necessitated by the advent of organic thin-film transistors (OTFTs). This study aims to study the performance of OTFT using a 2-decyl-7-phenyl-[1]benzothieno[3,2-b][1]benzothiophene (Ph-BTBT-C10) organic semiconductor. The paper also explore accurate device modeling for technology optimization and circuit design that supports device improvement. This research includes device fabrication, numerical simulation using TCAD, compact modeling, and parameter extraction. By combining temperature-dependent bandgap narrowing with existing theories, this …
Published in Journal of Polymer & Composites · Vol. 12, Issue 5, 2024 · pp. 1–18 Read article
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Polymer-coated Composites: Enhancing Performance in Single Electron Transistors
Abstract: The single electron transistors (SETs) have potential for ultra-low power operation and quantum coherence, and due to this it guarantees for next-generation electronics devices and quantum computing. SETs have the ability to control movement of a single electron and this unique ability allows significant advancement in the energy efficiency and device miniaturization. There are some obstacles that need to be overcome to achieve reliable and effective operation, particularly for room …
Published in Journal of Polymer & Composites · Vol. 13, Issue 1, 2025 · pp. 108–114 Read article
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A Comprehensive Review of FinFet Technology: Advantages, Challenges and Applications
Abstract: This has been complemented by improvements on the new layers that have surpassed the manufactures planar transistor by the new FinFET (Fin Field-Effect Transistor), which enhance modern demands on high performance, small size and low power consumption. This review is for a timely information on the latest development on FinFET technology, such as by curbing leakage currents by 50 percent and enhancing its speed by 30 percent proving that FinFETs …
Published in Journal of Semiconductor Devices and Circuits · Vol. 11, Issue 3, 2024 · pp. 1–12 Read article
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An Efficient Counter Using Modified Upper and Lower SVL Techniques and TSPCL
Abstract: Low power VLSI has emerged as the fundamental building block of the modern electronic era. This leads to a substantial paradigm shift where both power dissipation, performance and area of utmost importance. In the earlier time of fabrication, power dissipation was mainly neglected due to low device density and low operating frequency needed for computation. But in modern technological era, the need for high device density, higher operating frequency, proliferation …
Published in Research & Reviews : Journal of Physics · Vol. 13, Issue 2, 2024 · pp. 37–43 Read article
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A Comprehensive Review on FinFet Technology : Advantages, Challenges and Applications
Abstract: New devices and enhanced layers have been developed, specially the FinFET (Fin Field-Effect Transistor) which is considerably superior to the planar transistor because of its ability to meet the new demands of systems for high-performance, low-power, and dimensions reduction. Some of the recent developments in FinFETs mentioned in this review include a reduction of leakage currents by 50% and an enhancement of the speed by 30%; thus, FinFETs remain fundamental …
Published in Journal of Semiconductor Devices and Circuits Read article
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Design and Implementation of Low-power SPI Shift Register
Abstract: SPI stands for serial peripheral interface which is used for serial, synchronous and full duplex communication of data between master and slave devices. Master devices can be Microprocessors or Microcontrollers; and slaves are the Peripheral devices interfaced with them. The main internal component for architecture of master/slave block is shift register which defines its operation. But as the size of the shift register increases, power is utilized to a greater …
Published in International Journal of VLSI Circuit Design & Technology · Vol. 1, Issue 1, 2023 · pp. 1–15 Read article
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Next-Generation Semiconductors: Making AI, 5G, and More Possible
Abstract: The current digital environment is being reshaped by next-generation semiconductors, which are powering revolutionary technologies including enhanced computing systems, 5G connectivity, and artificial intelligence. Next-generation semiconductors are at the heart of new technologies that are changing the world we live in today, such as artificial intelligence (AI), 5G communication, and advanced computer systems. As traditional silicon-based designs reach their limits in terms of size and performance, new materials, architectures, and …
Published in Journal of Semiconductor Devices and Circuits · Vol. 13, Issue 1, 2026 Read article
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Silicon Symphony: The Science of Semiconductors Circuits
Abstract: Modern electronics are built on the foundation of semiconductor circuits, which precisely and efficiently control the flow of electrical impulses. This article takes a look at the underlying physics of semiconductor materials and how their unique electrical properties allow the design and functioning of diodes, transistors and integrated circuits. This study links microscopic scientific principles to the behaviour of real circuits. It considers essential concepts such as charge carriers, doping …
Published in International Journal of Solid State Innovations & Research · Vol. 4, Issue 1, 2026 Read article
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Smart Shuttle System: An IoT and Machine Learning Based Approach
Abstract: The Smart Shuttle System is an IoT-based system designed to provide a hassle-free, cashless payment experience for students using the shuttle service. The system utilizes RFID (Radio Frequency Identification) technology to identify students and deduct the fare amount from their account. Radio Frequency Identification (RFID) technology is being considered as an alternative to traditional money and Unified Payments Interface (UPI) for making payments due to several advantages it provides over …
Published in International Journal of Satellite Remote Sensing · Vol. 1, Issue 1, 2023 · pp. 9–22 Read article
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Physics of Semiconductors and Electronic Circuits
Abstract: This study talks about the basic ideas behind semiconductor physics and how important they are for making and running modern electronic circuits. It starts with a look at intrinsic and extrinsic semiconductors, going into how charge carriers move, energy band theory, and how doping affects how well the electricity flows. Next, the conversation turns to semiconductor devices like diodes, bipolar junction transistors (BJTs), and field-effect transistors (FETs). The focus is …
Published in Journal of Semiconductor Devices and Circuits · Vol. 12, Issue 2, 2025 · pp. 9–17 Read article
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Development of Polymer Based SRAM Cell with Enhance Low Power Performance
Abstract: Low-power memory technologies are in high demand with the rapid growth of portable electronics and energy-efficient computing systems. Static random-access memory (SRAM) plays a crucial role in processors, cache memories, and system-on-chip applications due to their speed and reliability. Static Random Access Memory (SRAM) is typically implemented using complementary MOS (CMOS) technology, which integrates both PMOS (P-channel Metal–Oxide–Semiconductor) and NMOS (N-channel Metal–Oxide–Semiconductor) transistors. However, as technology scales to deep submicron …
Published in Journal of Polymer & Composites · Vol. 14, Issue 1, 2026 · pp. 1439–1448 Read article
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Design and Simulation of Low-power, High-speed Effective Area Mux Based One-bit Full Adder Using CMOS Technology
Abstract: Our findings reveal a novel kind of circuit capable of performing both XOR and XNOR operations in parallel. Power dissipation and delay are both greatly reduced in the proposed circuits due to their low output capacitance as well as minimal short-circuit power dissipation. We show six new hybrid 1-bit full-adder (FA) circuits that take use of the XOR-XNOR or XOR/XNOR gates' special full-swing function. Each potential circuit layout has both …
Published in International Journal of VLSI Circuit Design & Technology · Vol. 1, Issue 1, 2023 · pp. 25–33 Read article
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Development of a Self-Cleaning Mechanism for Solar Panels to Enhance Efficiency
Abstract: On Earth, solar energy is the most plentiful source of energy. As it happens, the heat generated by the fusion of helium on the outermost part of the Sun additionally happens to be renewable. This energy is becoming popular because of natural advantages. In digital circuit design, AI can aid in logic synthesis and analog circuit design, AI can help in sizing transistors. The tools used to transform daylight into …
Published in Journal of Mechatronics and Automation · Vol. 11, Issue 1, 2024 · pp. 1–10 Read article
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A Majority Function Based Full Subtractor
Abstract: In the present landscape of very large-scale integration (VLSI) technology, the imperative to implement Boolean functions with minimal gate count remains a cornerstone of efficient circuit design. This pursuit has only grown more critical with the evolution of low-power design strategies, which now offer significantly enhanced benefits compared to traditional approaches. The trifecta of performance, affordability, and dependability continue to drive innovation in this field, shaping the trajectory of technological …
Published in Research & Reviews : Journal of Physics · Vol. 13, Issue 2, 2024 · pp. 8–14 Read article
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Performance Comparison of Noise-Tolerant, High- Performance CMOS Domino Logic Configurations
Abstract: In high-performance VLSI chip design, domino logic configuration is often preferred over static logic due to its faster operation and smaller area footprint, especially in deep submicron (DSM) technology. However, DSM noise has become a significant challenge in domino-based circuits, leading to compromises in the reliability and signal integrity of integrated circuits (ICs). The switching threshold of domino logic, defined as the input voltage level at which the gate output …
Published in Journal of Semiconductor Devices and Circuits · Vol. 12, Issue 2, 2025 · pp. 35–50 Read article
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Design and Simulation of Full Adder-Based CMOS 4-2 Compressor using CMOS XOR-XNOR Logic
Abstract: This study utilizes the recent development of CMOS transistors to construct an energy-efficient Full adder-based CMOS 4-2 compressor. The CMOS Exclusive-OR-Exclusive-NOR component and multiplexer used in the transmission logic of the novel CMOS compressor include eight transistors. The XOR-XNOR logic style is the most efficient and effective due to its speed and reduced power consumption. Utilizing an operational supply voltage of 0.7 V and 90nm CMOS technology, the Cadence Virtuoso …
Published in Recent Trends in Electronics Communication Systems · Vol. 12, Issue 3, 2025 · pp. 1–8 Read article
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Solar Wireless EV Charging System
Abstract: This project presents a Solar Wireless Electric Vehicle (EV) Charging System that integrates solar energy with inductive wireless power transfer (WPT) to achieve a sustainable and eco-friendly charging approach. The proposed system utilizes a 12V solar panel as the primary renewable energy source, which charges a 3.7V lithium-ion battery through a transistor-based control circuit. This stored solar energy then powers the primary coil, generating an alternating magnetic field that enables …
Published in International Journal of Electronics Automation · Vol. 3, Issue 2, 2025 · pp. 14–20 Read article