Search
12 articles for “GaAs”
-
Performance Analysis of Dual Junction Solar Cell Devices utilizing Subcells of In0.51Ga0.49P and GaAs to Study Key Solar Cell Parameters via TCAD based Simulation
Abstract: In the present work, a multi-junction solar cell was designed to obtain better performance over single-junction solar cells. The proposed structure is composed of different layers of diverse semiconductor materials stacked on each other. Here, an In0.51Ga0.49P/GaAs double-junction solar cell was outlined as having a distinctive composite material (GaAs) as the tunneling junction. To optimize the solar cell's effectiveness, In0.47Ga0.15Al0.37P was used in the window layer and the back-surface field …
Published in Journal of Polymer & Composites · Vol. 13, Issue 1, 2025 · pp. 829–837 Read article
-
Designing of GaAs Based Resonant Tunneling Diode and Nano Scale Applications with Considering NEGF
Abstract: Present situation of eletronic area in the world required small devices as well as low power dissipation and ultra high speed application. At this moment the presence of resonant tunneling diode can over come this type of problem and take a big role in nanoscale digital and analog applications.In this researh article is to demonestrated effect of asymmetric barrier with respect to symmetric barrier and digital inverter and THz analog …
Published in Journal of VLSI Design Tools and Technology · Vol. 5, Issue 1, 2015 · pp. 1–18 Read article
-
Performance Analysis and study of losses in GaAs Multi Junction Solar cells using Current and Voltage Measurements
Abstract: Cross section coordinated, triple-intersection sunlight based cells with strain repaid quantum spots (QDs) in the GaAs center cell were developed by Metal-Organic Chemical Vapor Deposition (MOCVD). Structures with various quantities of QD layers are contrasted with gauge structures with no QDs. Quantum proficiency and light I-V estimations show an expansion in hamper thickness and debasement of the open circuit voltage for QD sun powered cells. The QDs don't work on …
Published in Journal of VLSI Design Tools and Technology · Vol. 12, Issue 1, 2022 · pp. 1–7 Read article
-
Reflectance analysis for SOI application using semiconductor materials
Abstract: This work comprehensively investigates the high reflectance of semiconductor-glass (InP-FS, GaAs-BSG, Ge-BK7, Ge-BSG,GaAs-FS) grating SOI structure at wavelength 1.55m. The simulation results indicated that the reflectivities for InP-FS, Ge-BSG, Ge-BK7, GaAs-FS, and GaAs-BSG grating SOI structures are 99.01 percent, 99.03 percent, 99.20 percent, and 99.29 percent, 99.47 percent at wavelength 1.55m, respectively. The plane wave expansion approach is used in this simulation. When compared to the old outcome, the current …
Published in Journal of Semiconductor Devices and Circuits · Vol. 9, Issue 1, 2022 · pp. 34–38 Read article
-
High Reflectivity Semiconductor-glass Grating Structure for SOI Application
Abstract: AbstractHigh reflectance of semiconductor-glass (GaAs-BSG, InP-FS, GaAs-FS, Ge-BK7, Ge-BSG) grating SOI structure at wavelength 1.55 µm is thoroughly investigated in this paper. Simulation result showed that, reflectivities are 99.01, 99.03, 99.20, 99.29 and 99.47% at wavelength 1.55 µm for GaAs-BSG, InP-FS, GaAs-FS, Ge-BK7, Ge-BSG grating SOI structure, respectively. This simulation is carried out using plane wave expansion method. Present simulation gives effective result as compared to existing result.Keywords: semiconductor-glass grating, …
Published in Trends in Opto-electro & Optical Communication · Vol. 3, Issue 3, 2013 · pp. 9–12 Read article
-
Studies on the Electrical Characteristics of AlGaAs/GaAs High Electron Mobility Transistors
Abstract: AbstractIn this work, total 5722 individual simulation outputs are reported. The effects of drain voltage, gate voltage, aluminium mole fraction, and gate length on drain current are studied in AlGaAs/GaAs high electron mobility transistors (HEMTs). The linear region and saturation region are prominent in each drain characteristic curve. The drain current reduces in the structure of larger gate length. This work is useful to fabricate the HEMT based biomedical sensors. …
Published in Journal of Thin Films, Coating Science Technology & Application · Vol. 5, Issue 3, 2018 · pp. 30–40 Read article
-
A Comprehensive Review of FinFet Technology: Advantages, Challenges and Applications
Abstract: This has been complemented by improvements on the new layers that have surpassed the manufactures planar transistor by the new FinFET (Fin Field-Effect Transistor), which enhance modern demands on high performance, small size and low power consumption. This review is for a timely information on the latest development on FinFET technology, such as by curbing leakage currents by 50 percent and enhancing its speed by 30 percent proving that FinFETs …
Published in Journal of Semiconductor Devices and Circuits · Vol. 11, Issue 3, 2024 · pp. 1–12 Read article
-
Machine Learning Assisted Optimization of Nanoscale MOSFET Parameters Using TCAD Simulation
Abstract: This paper presents a machine learning (ML) assisted framework for the multi-objective optimization of nanoscale bulk n-channel metal-oxide-semiconductor field-effect transistors (nMOSFETs) with a 10 nm physical gate length, high-k HfO₂ gate dielectric, and TiN metal gate. Technology computer-aided design (TCAD) simulations employing drift-diffusion transport, Shockley-Read-Hall recombination, Lombardi mobility degradation, and density- gradient quantum correction models are used to generate a parametric dataset of 2,400 device configurations spanning gate length (L), …
Published in Journal of Microelectronics and Solid State Devices · Vol. 13, Issue 1, 2026 · pp. 10–19 Read article
-
Semiconduction detector for nuclear radiation
Abstract: This articulation has been study of radiation identification method by semiconductor. Radioactive transmutation originated radiation has scoped semiconductor to access energy exchange for generation of electron-hole pair to give rise semiconduction. Otherwise, electron and charged ion has collected to get signal to justify detection constitutive. Deficit of low atomic weight of Si and Ge to use as semiconductor detectors have schemed to secure through thick material preparation. In lieu, accessed …
Published in Journal of Nuclear Engineering & Technology · Vol. 12, Issue 1, 2022 · pp. 16–21 Read article
-
Modeling of In0.53Ga0.47As Quantum Dot Solar Cell
Abstract: AbstractQuantum dot solar cells have received tremendous attention for the next generation solar cell technology in the last decade. This paper exhibits the influence of In0.53Ga0.47As/GaAs quantum dots in a conventional p-i-n GaAs solar cell. The study reveals that insertion of In0.53 Ga0.47As/GaAs quantum dots in the p-i-n solar cell increases the short circuit current density as well as the overall conversion efficiency. When comparing a p-i-n cell with a …
Published in Journal of Semiconductor Devices and Circuits · Vol. 3, Issue 2, 2016 · pp. 27–31 Read article
-
Investigation and Dependency Analysis of Silicon Film Thickness on Performance of Surrounding Gate MOSFET at Subthreshold Regime
Abstract: The characteristics of cylindrical gate all around MOSFET have been studied in terms of the dependence of various device performance metrics on silicon film thickness (Tsi). In this work, the effect of silicon film thickness on numerous performance metrics like threshold voltage (Vt), On current (Ion), subthreshold leakage current (Ioff), On-Off current ratio (Ion/Ioff) and DIBL of cylindrical GAA are comprehensively evaluated and analysed. It has been observed that cylindrical …
Published in Journal of VLSI Design Tools and Technology · Vol. 8, Issue 2, 2018 · pp. 49–54 Read article
-
Simple Gain Model of Group III-V Semiconductor-based Laser Diode
Abstract: In these days, a layer of low bandgap material is sandwiched between two high bandgap layers.Most commonly-used pair of materials is gallium arsenide (GaAs) with aluminium galliumarsenide (AlGaAs) and Indium Phosphide (InP) with Indium gallium arsenide phosphide(InGaAsP) laser. A heterostructure is the junctions between different bandgap materials. Here,two such junctions are present, hence it is called the name "double heterostructure laser" orDH laser. The kind of laser diode may be …
Published in Recent Trends in Electronics Communication Systems · Vol. 7, Issue 3, 2020 · pp. 9–27 Read article