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91 articles for “VLSI circuits”
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Efficient Analysis and Minimization of Glitches using Threshold Swapped Combinational Clock Gating
Abstract: Nowadays design of electronic circuits to meet requirements like high speed, better functionality and low power is a tedious task. Power dissipation in any circuit comprises mainly two components: static power and dynamic power. The dynamic power heavily depends on the switching activity of the circuit. During the transistor switching transitions some spikes may occur, which are called as glitches. These glitches contribute 20–70% of the dynamic power and 20% …
Published in Journal of VLSI Design Tools and Technology · Vol. 5, Issue 2, 2015 · pp. 29–37 Read article
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Modelling of Skin Effect in On-Chip VLSI RLC Global Interconnect
Abstract: This paper addresses one of the aspects of the high frequency effects, namely the skin effect. The basicproblem with skin effect is that it attenuates the high frequency components of a signal more than that ofthe low frequency components. Due to the increase in operating frequency and die sizes, RC models arebecoming insufficient for analysis of global VLSI interconnects. Accurate noise modelling for RLC lines isthus critical for timing and …
Published in Journal of VLSI Design Tools and Technology · Vol. 1, Issue 1-2-3, 2011 · pp. 31–44 Read article
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Comparative Analysis of High Speed Comparator for A to D Converters
Abstract: In this paper dynamic comparator along with the output buffer stage has been introduced. The simulation is carried out in 130 and 90 nm technologies. The supply voltage for 130 nm is 1.3 V and for 90 nm is 0.9 V. Different analyses for various characteristics of the comparator such as ICMR, delay, offset voltage and power dissipation is carried out in 130 and 90 nm CMOS technology. The comparator …
Published in Journal of VLSI Design Tools and Technology · Vol. 5, Issue 2, 2015 · pp. 4–10 Read article
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Power Analysis Comparison of Gated Diode Dram Cell Design on 32 nm Technology
Abstract: In this paper power consumption of Gated diode DRAM (Dynamic Random Access Memory) cells are carried out. This analysis is carried out on 32 nm scale. The DRAM cell used here are 3T1D and 2T1D DRAM cell. Static, total average and transient power for both types of cells are simulated in order to have a comparison of their performance on the same technology. A comparative study of different types of …
Published in Journal of VLSI Design Tools and Technology · Vol. 5, Issue 1, 2015 · pp. 19–23 Read article
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Evaluation of OTA Amplifier Using EEG Signals
Abstract: AbstractOver the last few years, there has been a tremendous exploration in VLSI industries in response to scaling trends towards deep submicron technology. Demand for low power and efficient amplification are rising in day-to-day life. In the process of scaling the CMOS nanometer demand low supply, which is helped to design digital circuit realization at very low power consumption. But it is not valid for analog circuit realization. The related …
Published in Trends in Opto-electro & Optical Communication · Vol. 10, Issue 2, 2020 · pp. 5–14 Read article
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Design of Energy Efficient Clock System
Abstract: Energy efficiency is a key metric for energy constrained Ultra Low Power (ULP) VLSI applications such as wireless sensor nodes, pace makers, hearing aids etc. These applications need clock system in their signal processing and communication sub-system. Moreover, clock system plays a vital role in governing the reliability, power consumption and performance of synchronous system. In today’s era of portable electronics, power consumption has emerged as a forefront design metrics. …
Published in Journal of VLSI Design Tools and Technology · Vol. 9, Issue 2, 2019 · pp. 1–7 Read article
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Low Power High Speed Eight-Transistor (8T) SRAM Cell with Enhanced Data Stability
Abstract: The demand of static random access memory cell in embedded memories is rapidly increasing. To design SRAM is continuously becoming difficult due to limitation of weaker write margin, degraded data stability and higher leakage power consumption. In order to overcome these limitations, new 8T SRAM has been explored. The simulation results depicts better data stability, low access delay and decreased leakage power consumption. Alternatively, proposed cell with sleep transistor and …
Published in Journal of VLSI Design Tools and Technology · Vol. 7, Issue 3, 2017 · pp. 35–44 Read article
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Organic Material Based Device of VLSI :Solar Cell
Abstract: This focuses on one of the organic material-based devices of VLSI, which is Solar Cell, an electrical device that absorbs and converts the light energy precisely into electricity. This operates through the absorption of light which produces the pairs of electron-hole. After which it operates through the separation of charge carriers of the opposite one and lastly the separation of those carriers originates to a circuit. This covers the overall …
Published in Journal of VLSI Design Tools and Technology · Vol. 9, Issue 3, 2019 · pp. 16–20 Read article
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Design and Analysis of Bootstrap Sample and Hold Circuit
Abstract: This paper describes the design and implementation of open-loop sample and hold-circuit using bootstrap technique, which can be used as front end sampling circuit for high-speed analog-to-digital converters. Different design criteria, viz., speed, power, resolution, linearity, noise and harmonic analysis have been dealt with. Both theoretical analysis and simulation results are carried out. The bootstrap circuit is designed and then compared in a 0.18 and 0.35 μm CMOS process. It …
Published in Journal of Electronic Design Technology · Vol. 5, Issue 3, 2014 · pp. 7–14 Read article
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Comparative Analysis of Different SRAM Cells Architecture at 70 nm
Abstract: There are severe constraints which affect the real time operation of SRAM cells. With increasing demand of device scaling, the performance parameters of SRAM cells are affected. Our main purpose is to maintain performance of memory cells in real time operation. Here, we considered three basic parameters stability, leakage current and delay for compression of various SRAM cell architectures. In this paper, we considered conventional 6T, asymmetric 7T, asymmetric 8T …
Published in Journal of VLSI Design Tools and Technology · Vol. 8, Issue 2, 2018 · pp. 33–41 Read article
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Power-Efficient Design Strategies for Static Random Access Memory with Memory Blocks: A Review
Abstract: For many years, CMOS technology has been able to achieve high integration density and great performance by scaling down its feature size and threshold voltage. Power consumption has been a major concern in VLSI design due to the ongoing drop in aspect ratio and the related improvements in chip density and operation frequency. SRAM is a type of random-access memory in which an interruption in power causes data loss. For …
Published in Journal of Microcontroller Engineering and Applications · Vol. 10, Issue 3, 2023 · pp. 23–32 Read article
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Low-power, High-speed, Full-swing Hybrid Full Adder
Abstract: Abstract: Nowadays VLSI design demands low area and low-power consumption. In this study, a low-power, high-speed, full-swing 1-bit hybrid full adder is proposed. The hybrid full adder is decomposed into three sub-modules. For each sub-module, designs are different. Module 1 and 2 are designed using pass transistor logic (PTL) and Module 3 uses transmission gates to produce carry signal. Then by proposed low-power, high-speed hybrid full adder circuits play a …
Published in Research & Reviews: A Journal of Embedded System & Applications · Vol. 7, Issue 3, 2019 · pp. 22–29 Read article
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A Common Mode Scan Based BIST for Stuck-at-Fault and Path Delay Fault
Abstract: Testing for delay and stuck-at faults requires two pattern tests and test sets are usually large. Built-in self-test (BIST) scheme is attractive for comprehensive testing. The BIST test pattern generators (TPGs) for such testing should be designed to ensure high pattern-pair coverage. In the proposed work, necessary and sufficient conditions to ensure complete/maximal pattern-pair coverage for sequential circuit have been derived. A new test data-compression scheme is an effective approach …
Published in Journal of VLSI Design Tools and Technology · Vol. 8, Issue 2, 2018 · pp. 72–78 Read article
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Design and Implementation of A 4-bit Multiplier using Wallace Tree Architecture in 180 nm Technology
Abstract: Over the period of last decade, power dissipation has become one of the most important factors for VLSI designers in the design of most digital systems. Even though the speed and area are considered to be the critical factors in design of digital systems, there is a trade of with power consumption. Adders and multipliers are the most important arithmetic units in a processor and the major sources of power …
Published in Journal of Microcontroller Engineering and Applications · Vol. 2, Issue 1, 2015 · pp. 17–23 Read article
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Performance Analysis of 3T DRAM Using FinFET Based with Leakage Reduction Techniques at 45 nm Technology
Abstract: The proposed area of research is to reduce the power consumption, leakage voltage, leakage current and leakage power of DRAM while maintaining the competitive performance. The Fin FET approach is used in DRAM for high performance. Fin type field effect transistors (Fin FET) are capable substitutes for bulk CMOS at the nano-scale. Fin FET are double gate device. A Fin FET uses an intrinsic body. It greatly suppresses the device-performance …
Published in Journal of VLSI Design Tools and Technology · Vol. 7, Issue 3, 2017 · pp. 28–34 Read article
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Which is the Best 10T Static CMOS Full Adder for Ultralow-Power Applications?
Abstract: This paper presents the analysis of various 10-transistor CMOS 1-bit full adder circuits in terms of their output levels and finds out the suitable adder cell at 200 mV in subthreshold region at 16-nm technology node for ultra-low power applications. This paper also provides worst case output levels (sum and carry) of all the analyzed adder cells (which are presented in the paper) for various input combinations.Keywords: CMOS, carry, 2:1 …
Published in Journal of VLSI Design Tools and Technology · Vol. 5, Issue 1, 2015 · pp. 45–50 Read article
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Low-Offset High Speed CMOS Voltage Comparator using 180 nm Technology
Abstract: A low Off-Set high-speed two-stage dynamic comparator is presented. In this circuit, PMOS transistors are used at the input of the first and second stages of the comparator. At the evaluation phase, the second stage is activated after the first stage with a predetermined delay to achieve a controllable pre-amplifier gain. Also, the first stage is turned off after the delay to reduce overall power consumption. Simulation results in 0.18µm …
Published in Journal of VLSI Design Tools and Technology · Vol. 7, Issue 3, 2017 · pp. 21–27 Read article
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Single Bit Low-Power High-Speed Full Adder
Abstract: This paper presents a high-speed low-power full adder cells that lead to have a reduced power-delay product (PDP). A comparison against other full-adder structure as having low PDP, in terms of speed, power consumption and area of cells is carried out. This paper contains, a hybrid 1-bit full adder design employing both complementary metal-oxide semiconductor (CMOS) and transmission gate logic styles. First implemented was the design for 1 bit then …
Published in Journal of VLSI Design Tools and Technology · Vol. 7, Issue 3, 2017 · pp. 55–60 Read article
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Designing and Testing of various types of SRAM topologies with 90nm Technology
Abstract: VLSI technology provides a way for designing compact devices which are useful to human for leading their day to day, the advancement in the technology provides high speed and power consuming appliances. In this category, intend to design an application with high data rate and low power, memory efficient device and Static Random-Access Memory (SRAM) is structured. Improvement in the technology comprises of scaling down the design process and impact …
Published in Journal of Electronic Design Technology · Vol. 13, Issue 1, 2022 · pp. 12–16 Read article
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Numerical Simulation and Modeling of Self Heating in SOI MOSFET
Abstract: Abstract As the device size has been reduced the temperature increment of high-performance very large scale integrations (VLSIs) becomes a major issue. The self-heating effect and non-uniform power distribution in VLSIs, affect the performance of device. In this paper numerical simulation of self heating in SOI MOSFET has been performed. Poisson's equation, continuity equation, energy balance equation and heat flow equations have been solved self consistently using finite element method …
Published in Journal of Semiconductor Devices and Circuits · Vol. 5, Issue 3, 2018 · pp. 18–23 Read article