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71 articles for “short-circuit current”
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Maximum Power Point Tracking for Solar PV System
Abstract: There is an ever increasing demand for energy in today's world. The photovoltaic (PV) systems are the suitable options for satisfying an ever increasing need for energy and thus are being used widely around the globe. Some special methods are required for extracting the maximum available power out of PV systems because they are nonlinear in nature. The nonlinear characteristic of the IV curve of PV module has a unique …
Published in Journal of Electronic Design Technology · Vol. 7, Issue 1, 2016 · pp. 14–21 Read article
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Effect study of Cu2O in Perovskite (CH3NH3PbX3, X: I, Br, Cl) Solar Cell as Hole Transport Layer
Abstract: AbstractThe detailed modeling and mathematical simulation on perovskite solar cells have been performed with three various perovskite materials, such as “methyl ammonium lead trial halide (MAPbX3, MA= CH3NH3, X: I, Br, Cl)” with aid of solar cell capacitance simulator software (SCAPS) tools. The electrical possessions of MAPbX3 material performed as “active layer” and measured different parameters such as “open-circuit voltage (Voc), fill factor (FF), power conversion efficiency (PCE), and short-circuit …
Published in Journal of Microelectronics and Solid State Devices · Vol. 7, Issue 1, 2020 · pp. 5–10 Read article
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Effect Analysis of Different ETL Layer Thickness in Perovskite (CH3NH3PbI3) Solar Cell Using CuSCN as Hole Transport Layer
Abstract: Thickness of Electron Transport Layer (ETL) shows an important role in terms of stability and efficiency of perovskite solar cells. In this paper, numerical simulation and detailed modeling on perovskite solar cell was carried out using perovskite material such as methyl ammonium lead iodide (MAPbI3, MA= CH3NH3) at various thickness’s of ETL layer using the SCAPS tool. The electrical properties of the “MAPbI3 material” used as active layer for different …
Published in Journal of Microelectronics and Solid State Devices · Vol. 10, Issue 1, 2023 · pp. 1–7 Read article
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Performance analysis of ETL/Absorber and Absorber/HTL Interface Layer on Perovskite (CH3NH3PbX3, X: I) Solar Cell
Abstract: The effectiveness of perovskite solar cells employing perovskite materials such as methyl ammonium lead tri halide (MAPbX3, MA=CH3NH3, X:I) has been investigated in this research with the use of the SCAPS tool. The electrical properties of the MAPbX3 material utilized for the active layer have been calculated through numerical simulation and modelling for various parameters, including open-circuit voltage (Voc), power conversion efficiency (PCE), fill factor (FF), and short-circuit current density …
Published in Journal of Microelectronics and Solid State Devices · Vol. 10, Issue 1, 2023 · pp. 8–14 Read article
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Modeling of In0.53Ga0.47As Quantum Dot Solar Cell
Abstract: AbstractQuantum dot solar cells have received tremendous attention for the next generation solar cell technology in the last decade. This paper exhibits the influence of In0.53Ga0.47As/GaAs quantum dots in a conventional p-i-n GaAs solar cell. The study reveals that insertion of In0.53 Ga0.47As/GaAs quantum dots in the p-i-n solar cell increases the short circuit current density as well as the overall conversion efficiency. When comparing a p-i-n cell with a …
Published in Journal of Semiconductor Devices and Circuits · Vol. 3, Issue 2, 2016 · pp. 27–31 Read article
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Enhanced Photovoltaic Performance of Perovskite Solar Cell Using Copper Thiocyanate (CuSCN) as Hole Transport Layer
Abstract: In this study, the SCAPS tool was utilized to examine the efficacy of perovskite solar cells using perovskite materials such methyl ammonium lead Iodide (MAPbX3, MA=CH3NH3, X: I). Quantitative simulation and modeling have been used to determine the electrical characteristics of the MAPbI3 material used for the active layer for a number of parameters, including fill factor (FF), short-circuit current density (Jsc), power conversion rate (PCE), and open-circuit voltage (Voc). …
Published in Journal of Semiconductor Devices and Circuits · Vol. 10, Issue 3, 2024 · pp. 12–18 Read article
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Effect of ETL layer thickness on perovskite (CH3NH3PbI3) solar cell
Abstract: Abstract: Thickness of ETL (Electron transport layer) shows important role in term of stability and efficiency of perovskite solar cells. In this paper the numerical simulation and extensive modeling have been performed on perovskite solar cell using perovskite material such as methyl ammonium lead Iodide (MAPbI3, MA=CH3NH3) with the help of SCAPS tool. The electrical properties of the MAPbI3 material used as active layer, have been calculated for different parameter …
Published in Trends in Opto-electro & Optical Communication · Vol. 9, Issue 1, 2019 · pp. 32–37 Read article
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Impact Analysis of Different Active Layer (CH3NH3PbI3) Thickness Using Cu2O as Hole Transport Layer in Perovskite Solar Cell
Abstract: AbstractThickness of active Layer (CH3NH3PbI3) shows important role in term of stability and efficiency of perovskite solar cells. In this paper the numerical simulation and extensive modeling have been performed on perovskite solar cell using perovskite material such as methyl ammonium lead Iodide (MAPbI3, MA=CH3NH3) at different thickness with the help of SCAPS tool. The electrical properties of the MAPbI3 material used as active layer, have been calculated for different …
Published in Trends in Opto-electro & Optical Communication · Vol. 10, Issue 2, 2020 · pp. 15–20 Read article
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Impact of ETL/Absorber Interface layer on Perovskite (CH3NH3PbX3, X: I, Br, Cl) Solar Cell
Abstract: In this paper, the impact of ETL/Absorber interface layer has been studied on the efficiency of perovskite solar cell using perovskite materials such as methyl ammonium lead trihalide (MAPbX3, MA=CH3NH3, X: I, Br, Cl) through the SCAPS tool. Modeling and the numerical simulation have been performed with electrical properties of the MAPbX3 material used as the active layer and calculated different parameters such as open-circuit voltage (Voc), power conversion efficiency …
Published in Nano Trends – A Journal of Nano Technology & Its Applications · Vol. 21, Issue 2, 2019 · pp. 1–6 Read article
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Electric Vehicle And Charging System
Abstract: The swift expansion of Electric Vehicles (EVs) has generated a demand for smart charging structure. This project outlines the design and employment of an Electric Vehicle Charging System emphasizing power delivery, improved energy control and ease of use. The system combines power electronics, microcontroller-guided monitoring, safety apparatuses and an organized charging protocol to guarantee compatibility, with EV battery types. The suggested charger functions by transforming the AC input into a …
Published in Journal of Automobile Engineering and Applications · Vol. 12, Issue 3, 2025 · pp. 25–31 Read article
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Performance Analysis of Dual Junction Solar Cell Devices utilizing Subcells of In0.51Ga0.49P and GaAs to Study Key Solar Cell Parameters via TCAD based Simulation
Abstract: In the present work, a multi-junction solar cell was designed to obtain better performance over single-junction solar cells. The proposed structure is composed of different layers of diverse semiconductor materials stacked on each other. Here, an In0.51Ga0.49P/GaAs double-junction solar cell was outlined as having a distinctive composite material (GaAs) as the tunneling junction. To optimize the solar cell's effectiveness, In0.47Ga0.15Al0.37P was used in the window layer and the back-surface field …
Published in Journal of Polymer & Composites · Vol. 13, Issue 1, 2025 · pp. 829–837 Read article
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Improvement of Design Issues in FinFET based Design Techniques for XOR and XNOR Circuits at 45 nm Technology
Abstract: The scaling of conventional CMOS circuit inclines to the short channel effect due to leakage current increase in the circuit. To minimize the short channel effect, FINFET can be used in place of conventional CMOS circuits. This paper demonstrates comparative performance study of high speed, low power and low voltage on XOR and XNOR digital circuit. This paper assesses and compares the performance of XOR and XNOR logic circuits. This …
Published in Journal of Electronic Design Technology · Vol. 5, Issue 1, 2014 · pp. 22–35 Read article
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Review Paper To Design a Low Power CNTFET Based XOR Gate
Abstract: The continuous scaling down of Silicon technology leads to various critical challenges and reliability issues such as short channel effect, high leakage current, interconnect problems, etc. CNTFET is the most probable substitutes to traditional MOSFET. The CNTFET device based circuits portray advantages with its better control over the device channel, reduced leakage current, reduced short channel effects. The CNTFET based XOR gate circuits incur the minimum power and energy dissipation. …
Published in Journal of VLSI Design Tools and Technology · Vol. 8, Issue 1, 2018 · pp. 48–53 Read article
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Short Circuit MAG/MIG Welding and Fast ROOT Modified Short arc Welding Process for Sheet Metals Welding with Diverse Air Gap
Abstract: The outcome of an analysis allocating with welding of sheet metals with diverse air gap using short circuit MAG welding process and Fast ROOT custom-made short arc welding methods have been presented. Welding turns were made below different conditions and through each run; the diverse process parameters were incessantly observed. It was found that fewer HAZ and maximum welding speed are reached under an exact welding condition with quick ROOT …
Published in Journal of Materials & Metallurgical Engineering · Vol. 6, Issue 1, 2016 · pp. 47–59 Read article
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Grid-Connected Wind-Solar Hybrid System Analysis Using ETAP
Abstract: The Increasing integration of renewable energy sources in practice needs a thorough electrical performance assessment to guarantee reliable and stable operation of grid system. This work focuses on the modeling, simulation, and steady-state performance analysis of grid-connected wind-solar hybrid system through ETAP 19.0.1C. The suggested configuration is composed of 34.5 kV utility grid, eight units of wind turbine generators whose total installed capacity is 2.55 MW, six photovoltaic arrays, one …
Published in International Journal of Electrical Power and Machine Systems · Vol. 4, Issue 2, 2026 Read article
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Investigation of DC link Capacitor Failures in DFIG based Wind Energy Conversion System
Abstract: This paper presents the effects of DC link electrolytic capacitor failure of DFIG based wind energy conversionsystem (WECS). The degradation of electrolytic capacitor can lead to the failure of DC link. As DFIG basedWECS utilize low power converter, so there is a need to explore the effects of capacitor failure. This failure(short circuit of capacitor or open circuit) leads to the power outages, high machine currents, high transientcurrents in rotor …
Published in Trends in Electrical Engineering · Vol. 1, Issue 1-2-3, 2011 · pp. 13–22 Read article
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Orcad P-spice Modified Switches for Electrical and Electronic Circuits
Abstract: Voltage dependent switch and Current dependent switch are extensively used to obtain open/short circuit in various networks for various applications. PSPICE /OrCAD software analog behavioral modellings options and Spice dependent sources are used to obtain control equivalent circuits for switches (P-spice built-in models) to be used for two types of applications. Different circuits (at DC, time-domain), and Spice files are described to simulation circuits with analyses. The following features are …
Published in Journal of Semiconductor Devices and Circuits · Vol. 11, Issue 3, 2024 · pp. 27–45 Read article
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Performance Analysis of 3T DRAM Using FinFET Based with Leakage Reduction Techniques at 45 nm Technology
Abstract: The proposed area of research is to reduce the power consumption, leakage voltage, leakage current and leakage power of DRAM while maintaining the competitive performance. The Fin FET approach is used in DRAM for high performance. Fin type field effect transistors (Fin FET) are capable substitutes for bulk CMOS at the nano-scale. Fin FET are double gate device. A Fin FET uses an intrinsic body. It greatly suppresses the device-performance …
Published in Journal of VLSI Design Tools and Technology · Vol. 7, Issue 3, 2017 · pp. 28–34 Read article
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Performance Analysis of 3T DRAM Using FinFET Based with Leakage Reduction Techniques at 45 nm Technology
Abstract: The proposed area of research is to reduce the power consumption, leakage voltage, leakage current and leakage power of DRAM while maintaining the competitive performance. The Fin FET approach is used in DRAM for high performance. Fin type field effect transistors (Fin FET) are capable substitutes for bulk CMOS at the nano-scale. Fin FET are double gate device. A Fin FET uses an intrinsic body. It greatly suppresses the device-performance …
Published in Journal of VLSI Design Tools and Technology · Vol. 7, Issue 2, 2017 · pp. 28–34 Read article
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Experimental design and FEA Evaluation of Vibration-based Actuator
Abstract: AbstractCircuit breakers are mostly used in power distribution systems. Adornments of electrical switch extend and supplement its capacity. Essentially, circuit breakers are utilized in circumstance where current stock surpasses characterized cutoff points or short out in this way, which lead to component failure. Mechanical life test, operational dependability test, spillage module activity test, under voltage and shunt discharges test, assistant and caution contacts test are significant in the electrical switch …
Published in Recent Trends in Fluid Mechanics · Vol. 7, Issue 2, 2020 · pp. 33–40 Read article