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Journal of Microelectronics and Solid State Devices

Performance analysis of ETL/Absorber and Absorber/HTL Interface Layer on Perovskite (CH3NH3PbX3, X: I) Solar Cell

  1. Sarvesh Kumar Yadav
  2. Ravi Shankar Yadav
  3. Vikash Kumar Sachan

Abstract

The effectiveness of perovskite solar cells employing perovskite materials such as methyl ammonium lead tri halide (MAPbX3, MA=CH3NH3, X:I) has been investigated in this research with the use of the SCAPS tool. The electrical properties of the MAPbX3 material utilized for the active layer have been calculated through numerical simulation and modelling for various parameters, including open-circuit voltage (Voc), power conversion efficiency (PCE), fill factor (FF), and short-circuit current density (Jsc), respectively. The structure of a perovskite solar cell has taken into account the interface layer between the ETL (TiO2) serving as an electron transport layer and the absorber layer (CH3NH3PbI3), as well as the Cu2O material functioning as the hole transport layer (HTL) and absorber layer. For the perovskite solar cell that was previously researched, the capacitance-frequency (C-F) and capacitance-voltage (C-V) have been computed. The simulated findings demonstrate that the MAPbI3 has specifications for performance such as FF=83.44, PCE=27.86 %, Voc=1.1991 V, and[AG1]  Jsc=27.84 84 mAcm-2 when taking into account the effects of the ETL/Absorber & and Absorber/HTL interface layers.  [AG1]Pl see that units hv not been provided with many of the values thru out the ppr

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