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32 articles for “HEMT”
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Experimental Investigations to Improve the Electrical Characteristics of Nitride-Based Nanoelectronic High Electron Mobility Transistors
Abstract: In this work, the DC and RF performances of conventional nanoelectronic high electron mobility transistor (HEMT) are compared with those of two individually modified HEMT structures in a nano-scale regime. All simulation results are produced by the SILVACO- ATLAS physical simulator according to the performed designs of HEMT structures. In each of these HEMT structures, the formation of quantum well is demonstrated at unbiased condition. In the DC analysis of …
Published in Journal of Semiconductor Devices and Circuits · Vol. 8, Issue 1, 2021 · pp. 14–30 Read article
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Report on the Novel Electrical Characteristics of Microelectronic High Electron Mobility Transistors to Establish a Low-Cost Microelectronics Laboratory in the National Institute of Technology Arunachal Pradesh
Abstract: AbstractIn this work, total 22584 individual simulation-outputs are reported according to the performed simulation-studies on the microelectronic AlGaN/GaN high electron mobility transistors (HEMTs). This series of simulation work has been performed using the SILVACO-ATLAS software tool on the basis of already established theories related to the semiconductor-physics of HEMTs. In this work, the drain characteristics are investigated with respect to the aluminium mole fraction, drain voltage, gate voltage, gate length …
Published in Journal of Semiconductor Devices and Circuits · Vol. 4, Issue 2, 2017 · pp. 6–28 Read article
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A Review on High Electron Mobility Transistors
Abstract: AbstractThe demand for high speed semiconductor devices is increasing in recent years with the rapid development of the high frequency wireless and fiber optical communication systems. High electron mobility transistor (HEMT) is an important device and an excellent candidate for millimeter, sub-millimeter and microwave applications. Also, these devices have high frequency, high speed, low noise, high breakdown voltage, low cost and other power handling capabilities. Due to these reasons, they …
Published in Journal of Semiconductor Devices and Circuits · Vol. 3, Issue 2, 2016 · pp. 1–10 Read article
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Report on the Nanoelectronic-Designs of the High Electron Mobility Transistors by a Certain Range of Simulation-Studies in the IMPRINT-Project of the Government-of-India
Abstract: In this report, total 10755 individual simulation-outputs are reported according to the performed simulation studies on the nanoelectronic aspects of the high electron mobility transistors (HEMTs) by the nanoelectronic-designs of these advanced semiconductor devices in the purpose of the advancement of ‘science and engineering’ in this IMPRINT-Project as officially started on 3rd October 2016 at 03:00:00PM. This series of simulation work has been performed using the SILVACO-ATLAS software tool on …
Published in Nano Trends – A Journal of Nano Technology & Its Applications · Vol. 18, Issue 3, 2016 · pp. 36–58 Read article
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Electrical Characteristics and Probable Applications of High Electron Mobility Transistors for Very Large Scale Integration Circuits in Microelectronics and Nanoelectronics Industry
Abstract: In our work, a maximum drain current of 556 mA is achieved by the simulated structures of double-heterojunction high electron mobility transistors (HEMTs) using the SILVACO-ATLAS physical simulator. According to the results, drain current is higher at shorter gate length. Also, drain current is higher at larger aluminium mole fraction. Further, drain current is higher at larger thickness of AlGaN barrier layer. Again, drain current is found as higher at …
Published in Nano Trends – A Journal of Nano Technology & Its Applications · Vol. 22, Issue 2, 2020 · pp. 8–14 Read article
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Studies on the Variations of Drain Current in Gallium Nitride based High Electron Mobility Transistors
Abstract: AbstractIn this work, total 2477 individual simulation outputs are reported. Variations in drain current with respect to the electrical parameters (drain voltage and gate voltage) and structural parameters of high electron mobility transistors (HEMTs) have been studied. The drain current is higher corresponding to larger aluminium mole fraction. This study will be useful to fabricate the HEMT based biomedical sensors.Keywords: Drain current, drain voltage, gate voltage, high electron mobility transistorCite …
Published in Journal of Microwave Engineering and Technologies · Vol. 5, Issue 1, 2018 · pp. 13–24 Read article
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Simulation Studies on the Electrical Characteristics of High Electron Mobility Transistors
Abstract: AbstractSimulation studies have been performed on the AlGaN/GaN high electron mobility transistor (HEMT) with AlN spacer layer. The current-voltage characteristics have been studied with respect to different gate voltages and different doping concentrations. Studies have been performed on the quantum well depth variation corresponding to the designed HEMTs.Keywords: Doping, drain current, drain voltage, quantum wellCite this ArticleSanjib Kalita, Ashish Prajapati, Susanta Sinha Roy, Jyoti Prasad Banerjee, James Andrew McLaughlin, Subhadeep …
Published in Journal of Semiconductor Devices and Circuits · Vol. 3, Issue 2, 2016 · pp. 32–36 Read article
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Electrical Characteristics of Nanoelectronic Double-Heterojunction High Electron Mobility Transistors
Abstract: AbstractIn this work, a maximum drain current of 554 mA is achieved by the simulated structures of double-heterojunction HEMTs using the SILVACO-ATLAS software tool. The drain current is found to be higher at shorter gate length and at larger aluminium mole fraction. The drain current is also higher at larger thickness of AlGaN barrier layer and at larger doping concentration of AlGaN barrier layer.In this work, the formation of 2-DEG …
Published in Journal of Semiconductor Devices and Circuits · Vol. 7, Issue 1, 2020 · pp. 18–28 Read article
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Design and Performance of Semiconductor-Biosensor
Abstract: In this work, a high electron mobility transistor (HEMT) based biosensor is designed to detect the virus-protein. In this work, all the simulation-studies are carried out in the SILVACO-ATLAS physical simulator using the following models: Shockley Read Hall (SRH), band gap narrowing, Auger recombination, and Fermi Dirac statistics. Newton trap numerical solver is used in the device simulation. Conduction band engineering of the biosensor is studied. DC and RF properties …
Published in Journal of Semiconductor Devices and Circuits · Vol. 8, Issue 2, 2021 · pp. 1–13 Read article
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Studies on the Electrical Characteristics of AlGaAs/GaAs High Electron Mobility Transistors
Abstract: AbstractIn this work, total 5722 individual simulation outputs are reported. The effects of drain voltage, gate voltage, aluminium mole fraction, and gate length on drain current are studied in AlGaAs/GaAs high electron mobility transistors (HEMTs). The linear region and saturation region are prominent in each drain characteristic curve. The drain current reduces in the structure of larger gate length. This work is useful to fabricate the HEMT based biomedical sensors. …
Published in Journal of Thin Films, Coating Science Technology & Application · Vol. 5, Issue 3, 2018 · pp. 30–40 Read article
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Designing of GaAs Based Resonant Tunneling Diode and Nano Scale Applications with Considering NEGF
Abstract: Present situation of eletronic area in the world required small devices as well as low power dissipation and ultra high speed application. At this moment the presence of resonant tunneling diode can over come this type of problem and take a big role in nanoscale digital and analog applications.In this researh article is to demonestrated effect of asymmetric barrier with respect to symmetric barrier and digital inverter and THz analog …
Published in Journal of VLSI Design Tools and Technology · Vol. 5, Issue 1, 2015 · pp. 1–18 Read article
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Thevenin and Norton Resistance Using Time Domain Analyses Using Spice Simulations
Abstract: Thevenin and Norton equivalent circuits are of interest to circuit simulation designers and researchers. For the Thevenin resistance and Norton conductance determination of a network with available circuit theorems, the substitution network theorem (applied to OrCAD, SPICE, and Pspice AD simulation project) is shown to be suitable with the SPICE/ Pspice circuit simulation software. Instead of the DC option, the transient analyses option of SPICE is used to determine Thevenin/Norton …
Published in Current Trends in Signal Processing · Vol. 13, Issue 2, 2023 · pp. 8–18 Read article