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37 articles for “Gate length”
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Study of Scaling of MOSFET on Various Electrical Characteristics using Silvaco TCAD Tool
Abstract: MOSFETs are the driving work horse of semiconductor industry. Over the years, the MOSFET device density has been continuously increasing owing to the reduction in channel length of MOSFET device. This article discusses the effect of scaling i.e. channel length and gate oxide thickness on various parameters like threshold voltage, transconductance, maximum drain current and subthreshold slope. It is important to consider that with scaling of the channel length; the …
Published in Journal of Semiconductor Devices and Circuits · Vol. 5, Issue 1, 2018 · pp. 11–19 Read article
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3D Simulation of Multi-Gate Mosfet Analysis for Analog Circuit Design Parameters
Abstract: Chip density and performance improvements of semiconductor devices have been driven by their aggressive scaling. The performance of multi-gate FET for analog applications is explored in this paper. Analog operation of CMOS devices and its parameters are very important for future cutting edge technologies. The multi-gate technology shows excellent scalability and better immunity to short channel effects in MOSFETs. They are being easily assessed for CMOS applications beyond the 45 …
Published in Journal of Semiconductor Devices and Circuits · Vol. 1, Issue 2, 2014 · pp. 1–8 Read article
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A Two-Dimensional (2D) Analytical Model for Channel Potential and Threshold Voltage of Short Channel Triple Material Gate-Double Halo (TMG-DH) DG MOSFET
Abstract: In the present paper, an analytical model for the channel potential of short channel Triple Material Gate-Double Halo (TMG-DH) DG MOSFET has been presented using parabolic approximation method. Further, the threshold voltage of the device has been calculated using minimum mid channel potential and the result obtained has been compared with the threshold voltage of Triple Material double gate (TMDG) MOSFET in order to show the improvement in the threshold …
Published in Journal of Microelectronics and Solid State Devices · Vol. 6, Issue 2, 2019 · pp. 13–25 Read article
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Turbulence Modelling for Estimation of Hydraulic Jump Height
Abstract: AbstractThe simulation plays an important role in understanding the behavior of the flow field that becomes difficult through experimental analysis. The present work focuses on the experimental studies carried out for different discharges ranging from 9.8 lps to 12.5 lps. The gate openings adopted for the study are 0.025 m at a slope of 1:1200 and 0.023 m at a slope of 1:857 and 1:705.8. The simulations were extended to …
Published in Recent Trends in Fluid Mechanics · Vol. 5, Issue 3, 2018 · pp. 8–18 Read article
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Performance Analysis of Ultra-Short Junctionless DGMOS Nanowire Transistors with High-k Gate Dielectric
Abstract: AbstractIn this report, we present a comparative analysis of ultrashort 3-D junctionless nanowire DGMOS transistors using different high-k gate dielectric by virtually fabricating the device in Visual TCAD. The ultrashort devices having channel length of 20 nm were simulated and performances like I-V characteristics, transconductance etc. were analysed. It was found that HfO2 has better steady state performances as gate dielectric owing to better control of the channel over the …
Published in Journal of Communication Engineering & Systems · Vol. 9, Issue 1, 2019 · pp. 35–42 Read article
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Comparative Study of a 32 bit Clock Gated ALU based on Carry Skip Adder and Ripple Carry Adder
Abstract: The ALU is one of the most frequently accessed modules in a CPU and is utilized during most instruction executions. Hence the power consumption of the ALU is a major concern. In this paper a low power 32 bit ALU is designed using VHDL. Lower power consumption is achieved by using clock gating technique than conventional design. A carry skip adder with variable block length is used for the arithmetic …
Published in Journal of VLSI Design Tools and Technology · Vol. 3, Issue 2, 2013 · pp. 6–11 Read article
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Performance Analysis of Fully Flexible Organic Humidity Sensor with Top-Contact and Bottom-Contact OTFTs
Abstract: Abstract: Organic field-effect transistor (OFET) based humidity sensors are extensively used nowadays due to their low cost, mechanically flexible and compatibility with lower temperature fabrication techniques that support the plastic substrate based device and circuit applications. This paper investigates the humidity dependence of performance of organic humidity sensor with Top-Contact and Bottom-Contact OTFTs. Subsequently, impact of channel length on sensor performance is analyzed. The humidity sensitivity of organic sensor drain …
Published in Journal of Semiconductor Devices and Circuits · Vol. 6, Issue 1, 2019 · pp. 26–34 Read article
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Design and Simulation of FIR Filter using VHDL
Abstract: Digital Signal Processing (DSP) has gained great popularity in the recent years. DSP is used in the field of communication, medicine and entertainment. Earlier the digital signals use is expensive in the communication devices. DSP makes use of the digital filters in the communication equipment. The basic building block of the digital filter-adder, coefficient multipliers and delays. Digital filter can be implemented efficiently by selecting an efficient representation for filter …
Published in Journal of Communication Engineering & Systems · Vol. 8, Issue 1, 2018 · pp. 19–28 Read article
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Detecting Phishing Websites Using Hybrid Methodologies
Abstract: In the digital era, personal information theft has become a widespread and increasingly severe crime. Cybercriminals, often known as hackers, use deceptive strategies, with phishing websites being a major method for stealing confidential data. These fake websites imitate legitimate ones, tricking users into revealing sensitive personal and financial information, which has led to a rise in fraud cases. To address this escalating threat, a comprehensive research paper is proposed. This …
Published in Journal of Computer Technology & Applications · Vol. 15, Issue 3, 2024 · pp. 59–65 Read article
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Layout Design, Fabrication and Characterization of n-Channel MOSFET
Abstract: Primary force behind evolution of semiconductor industry is MOSFET, after its first IC based experimental demonstration in 1960s. It is fundamental working unit of most of the electronic circuits like cells in living being. Number of devices on a single chip has been increased with rapid phase with evolution of new technology of materials. Today there are more than 4 billion transistors are there on a single chip with effective …
Published in Journal of VLSI Design Tools and Technology · Vol. 6, Issue 2, 2016 · pp. 13–18 Read article
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Optimization of Type-4 Plastic Liner Composite Overwrapped Pressure Vessel Design
Abstract: Composite Overwrapped Pressure Vessels (COPVs) are prominently utilized for the storage of gases at high-pressure. Their widespread adoption is because they are significantly lighter weight compared to complete metal counterparts, but requires specialized design, and manufacturing process. This research employs finite element modelling to analyse the stress and failure assessments on a specific Type-IV COPV with plastic liner as core cylinder. This study aims to optimize COPV design by considering …
Published in Journal of Polymer & Composites · Vol. 13, Issue 3, 2025 · pp. 405–412 Read article
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A Circuit Approach for CMOS VLSI Circuit Leakage Power Reduction
Abstract: Despite the fact that scaling CMOS technology boosted speed, leakage currents always remained an issue. The issue has gotten worse as the scaling has gone into the UDSM (ultra-deep-submicron) range. In order for the circuit to function effectively, these unwanted leakage currents must be reduced to a minimum. It is challenging to create these leakage-free nano-scale CMOS circuits. In this work, the issue of leakage power is addressed, which occurs …
Published in Research & Reviews: A Journal of Embedded System & Applications · Vol. 10, Issue 3, 2022 · pp. 7–18 Read article
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Internet of Things and Wireless Sensor Networks: A Review
Abstract: The Internet of things (IoT) is a group of physical objects with sensor, processing capability and technologies that can connect and interchange data with other devices and systems over the Internet or other communications networks. A Wireless Sensor Network is a network of sensing nodes that collaboratively sense and monitor any system or object or area. This consists of sensors, actuator, gateways, clients etc. These nodes observe the collected data …
Published in Recent Trends in Sensor Research & Technology · Vol. 9, Issue 2, 2022 · pp. 8–11 Read article
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Advanced Mathematical Modelling of Nanoscale Semiconductor Devices for Low-Power Microelectronic Applications
Abstract: With the ongoing scaling down of semiconductor devices, there is an increasing need for accurate mathematical models of electrostatic control, carrier transport, leakage current, and power consumption at the nanometer scale. As the sizes of semiconductors continue to decrease, there is a growing need for accurate mathematical models of electrostatic control, carrier transport, leakage current, and power consumption at the nanometer scale. In this work, a common mathematical modelling approach …
Published in Journal of Microelectronics and Solid State Devices · Vol. 13, Issue 2, 2026 Read article
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An Innovative Approach of the Analysis of the Low Noise of a CMOS-Based Amplifier for Analog Signal-based Applications
Abstract: A low-noise amplifier (LNA), which is based on the cascode feedback methodology, has been commonly used for various wireless protocol-based network applications nowadays. It is so because this topology ensures that the low-noise amplifier (LNA) can achieve quite a high performance and thus, provides a high qualitative output. This amplifier is operated with a low voltage supply in the range of few volts that requires that the impedances of the …
Published in Journal of VLSI Design Tools and Technology · Vol. 2, Issue 1-2-3, 2012 · pp. 7–15 Read article
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Design and Implementation of High-Speed Low Power Low Area Hybrid One Bit Full Adder Using CMOS Technology
Abstract: In this article, we'll take a look at a new kind of Full Adder (FA) design that mixes traditional Complementary Metal Oxide Semiconductors (CCMOS) with Pass Transistors (PTs) and Transmission Gates (TGs). To analyze the circuit's performance, we used the Mentor Graphics software package. Since all twenty (20) varieties of Full Adder circuits were able to be measured and compared, this research was conducted. When the clock rate of the …
Published in International Journal of VLSI Circuit Design & Technology · Vol. 1, Issue 2, 2023 · pp. 29–39 Read article
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A Novel Conflict-Free Efficient Memory-Based Real FFT Processor using UTB
Abstract: AbstractWe present “A Novel Conflict-Free Efficient Memory-Based Real Fast Fourier Transform (RFFT) using Urdhva Tiryagbhayam Butterfly”. In this paper different FFT lengths for address schemes are integrated that supports FFT processing which are used in diverse systems such as telecommunications. Address methods for various FFT lengths are coordinated in this paper to help FFT processing for different frameworks like broadcast communications. The memory bank and address can be produced by …
Published in Journal of VLSI Design Tools and Technology · Vol. 9, Issue 3, 2019 · pp. 1–11 Read article