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705 articles for “sil”
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Numerical Simulation and Modeling of Self Heating in SOI MOSFET
Abstract: Abstract As the device size has been reduced the temperature increment of high-performance very large scale integrations (VLSIs) becomes a major issue. The self-heating effect and non-uniform power distribution in VLSIs, affect the performance of device. In this paper numerical simulation of self heating in SOI MOSFET has been performed. Poisson's equation, continuity equation, energy balance equation and heat flow equations have been solved self consistently using finite element method …
Published in Journal of Semiconductor Devices and Circuits · Vol. 5, Issue 3, 2018 · pp. 18–23 Read article
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Electrical Characteristics of AlGaN/GaN/AlGaN HEMTs
Abstract: AbstractA maximum drain current of 556 mA is achieved by the simulated structures of double-heterojunction AlGaN/GaN/AlGaN high electron mobility transistors (HEMTs) using the SILVACO-ATLAS software tool in this work. The drain current is observed as higher at shorter gate length. The drain current is found as higher at larger aluminium mole fraction. Also, the drain current is found as higher at larger thickness of AlGaN barrier layer. The drain current …
Published in Journal of Semiconductor Devices and Circuits · Vol. 5, Issue 3, 2018 · pp. 7–17 Read article
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Simulation Studies on the Drain Characteristics of Microelectronic AlGaN/GaN HEMTs Corresponding to the 30 nm of AlGaN Nano-Layer
Abstract: AbstractIn this work, the simulation studies are performed on high electron mobility transistor (HEMT) structures using the SILVACO-ATLAS software tool. The drain characteristics of HEMT structures is investigated with respect to the Aluminium mole fraction, drain voltage, gate voltage, and gate length at 30 nm thickness of AlGaN nano-layer. The simulation studies on the effect of gate length to control the drain characteristics are a novelty of this work. The …
Published in Journal of Semiconductor Devices and Circuits · Vol. 4, Issue 1, 2017 · pp. 8–16 Read article
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Report on the Novel Electrical Characteristics of Microelectronic High Electron Mobility Transistors to Establish a Low-Cost Microelectronics Laboratory in the National Institute of Technology Arunachal Pradesh
Abstract: AbstractIn this work, total 22584 individual simulation-outputs are reported according to the performed simulation-studies on the microelectronic AlGaN/GaN high electron mobility transistors (HEMTs). This series of simulation work has been performed using the SILVACO-ATLAS software tool on the basis of already established theories related to the semiconductor-physics of HEMTs. In this work, the drain characteristics are investigated with respect to the aluminium mole fraction, drain voltage, gate voltage, gate length …
Published in Journal of Semiconductor Devices and Circuits · Vol. 4, Issue 2, 2017 · pp. 6–28 Read article
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Electrical Characteristics of Nanoelectronic Double-Heterojunction High Electron Mobility Transistors
Abstract: AbstractIn this work, a maximum drain current of 554 mA is achieved by the simulated structures of double-heterojunction HEMTs using the SILVACO-ATLAS software tool. The drain current is found to be higher at shorter gate length and at larger aluminium mole fraction. The drain current is also higher at larger thickness of AlGaN barrier layer and at larger doping concentration of AlGaN barrier layer.In this work, the formation of 2-DEG …
Published in Journal of Semiconductor Devices and Circuits · Vol. 7, Issue 1, 2020 · pp. 18–28 Read article
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Design and Performance of Semiconductor-Biosensor
Abstract: In this work, a high electron mobility transistor (HEMT) based biosensor is designed to detect the virus-protein. In this work, all the simulation-studies are carried out in the SILVACO-ATLAS physical simulator using the following models: Shockley Read Hall (SRH), band gap narrowing, Auger recombination, and Fermi Dirac statistics. Newton trap numerical solver is used in the device simulation. Conduction band engineering of the biosensor is studied. DC and RF properties …
Published in Journal of Semiconductor Devices and Circuits · Vol. 8, Issue 2, 2021 · pp. 1–13 Read article
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DC and RF Analysis on Specific Quantum-Well Heterostructures
Abstract: Polarization-graded AlGaN back-barrier nano-layer is introduced in high electron mobility transistor (HEMT) structure to have an improved drain current characteristics and better radio-frequency performance, using two-dimensional drift-diffusion simulation by SILVACO-ATLAS physical simulator. In this work, the AlGaN/AlN/GaN/AlGaN/GaN double heterojunction HEMT structure is optimised with graded back barrier layer to study the DC and RF performances. Investigation of this structure with graded back barrier layer is the novelty of this work. …
Published in Journal of Semiconductor Devices and Circuits · Vol. 9, Issue 1, 2022 · pp. 1–13 Read article
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Nanowire Photodetectors and Applications: A Review Study
Abstract: The utilization of nanowires and nanowire structures as photodetectors is an arising research subject. Novel gadget structures incorporated in single nanowire gadgets are additionally being effectively contemplated and created. Here, general NW-PD ideas are investigated, along with a point-by-point depiction of the actual phenomenon happening in nanowire photoconductors & phototransistors. Low dimensional frameworks like nanotubes and nanowires have intriguing, and technologically valuable, optical and electrical properties. Studies on these frameworks …
Published in Journal of Semiconductor Devices and Circuits · Vol. 10, Issue 2, 2024 · pp. 15–19 Read article
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Effect of Various Parameters on Threshold Voltage of Virtually Fabricated Lightly Doped PMOS Device
Abstract: This paper emphasis on the design, fabrication and analysis of 45 nm P type MOSFET device using SILVACO TCAD tool. The analysis was based on variation of various parameters like oxide thickness, threshold implant and halo implant (pockets) to analyze the threshold voltage. The drain versus gate and drain versus gate plots are being plotted using tony-plot. It has been observed that as the thickness of the oxide increases, threshold …
Published in Journal of VLSI Design Tools and Technology · Vol. 7, Issue 3, 2017 · pp. 13–20 Read article
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Effect of Various Parameters on Threshold Voltage of Virtually Fabricated Lightly Doped PMOS Device
Abstract: This paper emphasis on the design, fabrication and analysis of 45 nm P type MOSFET device using SILVACO TCAD tool. The analysis was based on variation of various parameters like oxide thickness, threshold implant and halo implant (pockets) to analyze the threshold voltage. The drain versus gate and drain versus gate plots are being plotted using tony-plot. It has been observed that as the thickness of the oxide increases, threshold …
Published in Journal of VLSI Design Tools and Technology · Vol. 7, Issue 2, 2017 · pp. 13–20 Read article
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Sedimentation Yield Analysis of Hatnur Dam using SWAT and GIS
Abstract: Sedimentation in reservoirs throughout the world are leading to loss of reservoir storage capacitythereby reduces the useful lifetime of dams. Storage reservoirs built across rivers or streams tend tolose their water storage capacity progressively with the passage of time due to sedimentation. After thedesigned sediment deposition capacity of the reservoir, further addition in sediment deposits affectsthe reservoir regulation operations. It’s therefore necessary to assess reservoir sediment depositioncapacity and plan for …
Published in Journal of Water Resource Engineering and Management · Vol. 8, Issue 3, 2021 · pp. 30–39 Read article
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Effects of Polypropylene Fibre on Strength of Geopolymer Concrete
Abstract: In the construction industry, the most vital parameter considered in the current scenario is the sustainable development of the structures. The most used material in construction is concrete, which is primarily made up of Portland cement. The production of Portland cement is nearly about 2.6 billion tonnes per year and is increasing at the rate of 5% annually. The concrete industry contributes about 5–8% of all human generated carbon dioxide …
Published in Recent Trends in Civil Engineering & Technology · Vol. 6, Issue 3, 2016 · pp. 23–31 Read article
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Strength Based Comparative Study of Green Concrete
Abstract: Green concrete may be a revolutionary topic within the history of concrete trade. It is a kind of concrete that resembles the standard concrete however, the assembly or usage of such concrete needs minimum quantity of energy and causes least damage to atmosphere. Recycled coarse mixture may be employed by partly substitution natural concrete aggregates, so construction and demolition waste may be more used for aggregates in new construction. Recycled …
Published in Recent Trends in Civil Engineering & Technology · Vol. 6, Issue 2, 2016 · pp. 63–67 Read article
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Studies on Effect of Various Curing Methods in Glass Fibre Reinforced Geopolymer Concrete with 12 Molarity Alkaline Solutions
Abstract: Due to the increasing environmental impacts associated with ordinary Portland cement, need to develop alternative binders to make concrete, is steadily increasing. Geopolymer concrete is the result of the reaction of materials containing Alumino-silicate with concentrated alkaline solution to produce an inorganic polymer binder. Alkaline solutions used were Sodium Hydroxide and Sodium Silicate. This paper presents results of an experimental study on the compressive strength, flexural strength and split tensile …
Published in Recent Trends in Civil Engineering & Technology · Vol. 5, Issue 2, 2015 · pp. 1–7 Read article
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A Study On Mems Piezoresistive Pressure Sensor Design And Its Applications
Abstract: Easier and faster means of Pressure measurement is in utmost demand in Industries. MEMS piezoelectric pressure sensors can meet the claim due to its compactness and lightweight. The pressure measurement is purely application specific. The number of steps required to fabricate the MEMs sensor can be condensed if a proper selection of sensor is done. Based on the type of the piezoelectric materials used in the design, the shape of …
Published in Recent Trends in Electronics Communication Systems · Vol. 8, Issue 1, 2021 · pp. 18–23 Read article
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Automatic Language Identification using Basic Signal Class
Abstract: Automatic language identification (ASLID) is a problem of identifying an unknown language from spoken utterance by a computer. A segmental approach to ASLID based on the assumption that the acoustic structure of languages can be estimated by segmenting speech into three basic classes of speech signals. This paper presents a procedure of ASLID with the details of methodology and the results without recognizing the words, but the lengths segments of …
Published in Trends in Electrical Engineering · Vol. 9, Issue 2, 2019 · pp. 12–19 Read article
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Modelling and analysis of machining characteristics of aluminium composite on CNC by Taguchi L9
Abstract: The machining of aluminum silicon oxide is used in high speed CNC milling in light of the fact that such composites have number of applications in the aeronautics industry. The inspiration driving this examination is to explore the effects of machining parameters on surface roughness and material expulsion rate in high exactness CNC machine since industry requires low surface unpleasantness and high material expulsion rate, the model for surface harshness …
Published in Trends in Mechanical Engineering & Technology · Vol. 12, Issue 2, 2022 · pp. 1–7 Read article
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Interface Engineering of Graphene Multi-Junction InGaP/GaAs/InGaAs/Ge Solar PVC
Abstract: AbstractThe main impediment faced by solar Photo-Voltaic Cell (PVC) is the excitation of charge carriers by high and low energy photons to make them reach the conduction band as this superintends the output device current. To enhance the device current, intermediate engineering of solar PVC is the most prominent strategy. An Inter-Mediate Layer (IML) serves as a spectrally selective layer between the muti-junctions for tandem solar cell. This research work …
Published in Trends in Opto-electro & Optical Communication · Vol. 8, Issue 1, 2018 · pp. 1–7 Read article
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Simulation of Electric Field Induced by Electromagnetic Radiation on Spherical Nanoparticles
Abstract: AbstractIn this article, the interaction of light and matter of nanoparticles is simulated for the electric field induced by electromagnetic radiation on spherical nanoparticles. The absorption, scattering and extinction efficiencies are demonstrated for initial wavelength of the incident of light from 300 nm to the final wavelength at 900 nm range for the silver material of 250 nm (spherical nanoparticles) radius with 1.0 refractive index. These optical properties vary according …
Published in Trends in Opto-electro & Optical Communication · Vol. 8, Issue 2, 2018 · pp. 20–24 Read article
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Optimization of Power in SG-SOI Structure at 1550 nm for Nanophotonic Application
Abstract: AbstractOptical power of semiconductor grating silicon-on-insulator (SG-SOI) at 1550 nm is investigated in this paper. The power of SG-SOI structure is calculated using plane wave expansion (PWE) method. Simulation result reveals that optical power is more than 99.9% in all SG-SOI structure. Simulation result shows that suitable combinations of grating layers play vital role to obtain high optical power.Keywords: SG-SOI, PWE, power
Published in Trends in Opto-electro & Optical Communication · Vol. 3, Issue 2, 2013 · pp. 22–24 Read article