Optimization of Power in SG-SOI Structure at 1550 nm for Nanophotonic Application

Gopinath Palai; S. K. Sahoo

doi:10.37591/toeoc.v3i2.1890

Trends in Opto-electro & Optical Communication

Optimization of Power in SG-SOI Structure at 1550 nm for Nanophotonic Application

Abstract

AbstractOptical power of semiconductor grating silicon-on-insulator (SG-SOI) at 1550 nm is investigated in this paper. The power of SG-SOI structure is calculated using plane wave expansion (PWE) method. Simulation result reveals that optical power is more than 99.9% in all SG-SOI structure. Simulation result shows that suitable combinations of grating layers play vital role to obtain high optical power.Keywords: SG-SOI, PWE, power

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How to cite

Gopinath Palai, S. K. Sahoo. Optimization of Power in SG-SOI Structure at 1550 nm for Nanophotonic Application. Trends in Opto-electro & Optical Communication. 2019;3(2):22–24. https://doi.org/10.37591/toeoc.v3i2.1890

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Article details

Journal: Trends in Opto-electro & Optical Communication
Issue: Volume 3, Issue 2 (2013)
Pages: 22–24
Published: April 1, 2019
DOI: 10.37591/toeoc.v3i2.1890