Trends in Opto-electro & Optical Communication
Volume 3, Issue 2 (2013)
Published
Table of contents
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Effects of Variation of Injection Current on Characteristics of a 1550 nm Semiconductor Laser
Abstract: AbstractThis work represents the prototype of both the analytical and the simulation based study on high speed communication system particularly high speed data transmission through optical fiber using 1550 nm InGaAsP/InP laser. In recent years, Vertical Cavity Surface Emitting Lasers (VCSELs) are prerequisites for future ultrahigh data-rate systems. This paper represents an overview on high speed performance of the 1550 nm VCSEL. Using MATLAB simulation tool the characteristics of the …
Published in Trends in Opto-electro & Optical Communication · Vol. 3, Issue 2, 2013 · pp. 1–6 Read article
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Optimization of Indium Concentration for Obtaining Enhanced Performance of 980nm InxGa1-xAs/GaAs MQW VCSELs
Abstract: AbstractIn this work, an optimization of Indium concentration of 980 nm InxGa1-xAs/GaAs MQW VCSELs is presented with the aim of improving dynamic performance of the VCSEL. An improved modulation performance is obtained by optimizing Indium concentration of x=0.2. A high modal gain and low transparency carrier density contributes to a high optical output power for In0.2Ga0.8As/GaAs MQW VCSEL. A highest modulation bandwidth of 11.625 GHz is obtained for In0.2Ga0.8As/GaAs MQW …
Published in Trends in Opto-electro & Optical Communication · Vol. 3, Issue 2, 2013 · pp. 14–21 Read article
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Optimization of Power in SG-SOI Structure at 1550 nm for Nanophotonic Application
Abstract: AbstractOptical power of semiconductor grating silicon-on-insulator (SG-SOI) at 1550 nm is investigated in this paper. The power of SG-SOI structure is calculated using plane wave expansion (PWE) method. Simulation result reveals that optical power is more than 99.9% in all SG-SOI structure. Simulation result shows that suitable combinations of grating layers play vital role to obtain high optical power.Keywords: SG-SOI, PWE, power
Published in Trends in Opto-electro & Optical Communication · Vol. 3, Issue 2, 2013 · pp. 22–24 Read article
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Performance Analysis of a 1550nm MQW VCSEL by Varying Injection Current
Abstract: AbstractIn this work, the performance of a 1550nm top emitting multi quantum well (MQW) vertical cavity surface emitting laser (VCSEL) has been obtained for the selected quaternary compound In0.53Ga0.47As0.88P0.12 quantum well material the peak material gain is obtained as 1425cm-1. The optical output power of 31.35dBm and the resonance frequency of 5.8GHz are obtained at 6.1mA of injection current. Further by increasing the injection current up to 12mA a maximum …
Published in Trends in Opto-electro & Optical Communication · Vol. 3, Issue 2, 2013 · pp. 25–29 Read article
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Realization of Braggs Grating for SOI Application using PWE Method
Abstract: AbstractThis paper presents the optimization of reflectance in Braggs grating on silicon-on-insulator (SOI) structure at wavelength 1.55 μm using plane wave expansion method. It is seen that reflectance’s differ on different SOI structures. Simulation result reveals that polymer-air grating SOI structure having a period of 0.5 mm, grating length of 2 cm is matched with experimental results and it is found that better agreement than any other results in literature.Keywords: …
Published in Trends in Opto-electro & Optical Communication · Vol. 3, Issue 2, 2013 · pp. 30–35 Read article
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High Modulation Performance of a Designed InGaN Based 405 nm Multi-Quantum Well Violet Laser
Abstract: AbstractIn this work, the modulation performance characteristics of a designed 405 nm InGaN based multi-quantum well (MQW) Violet Laser are optimized and presented by varying injection current and differential gain. A maximum output power of 222.53 mW and a maximum resonance frequency of 18.79 GHz of the laser are obtained for 117 mA injection current, where, the differential gain is 4x10-16cm2. The differential quantum efficiency of the laser is obtained …
Published in Trends in Opto-electro & Optical Communication · Vol. 3, Issue 2, 2013 · pp. 7–13 Read article