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4 publications

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    High Reflectivity Semiconductor-glass Grating Structure for SOI Application

    By Gopinath Palai, S. K. Beura

    Abstract: AbstractHigh reflectance of semiconductor-glass (GaAs-BSG, InP-FS, GaAs-FS, Ge-BK7, Ge-BSG) grating SOI structure at wavelength 1.55 µm is thoroughly investigated in this paper. Simulation result showed that, reflectivities are 99.01, 99.03, 99.20, 99.29 and 99.47% at wavelength 1.55 µm for GaAs-BSG, InP-FS, GaAs-FS, Ge-BK7, Ge-BSG grating SOI structure, respectively. This simulation is carried out using plane wave expansion method. Present simulation gives effective result as compared to existing result.Keywords: semiconductor-glass grating, …

    Published in Trends in Opto-electro & Optical Communication · Vol. 3, Issue 3, 2013 · pp. 9–12 Read article

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    Realization of Braggs Grating for SOI Application using PWE Method

    By Gopinath Palai

    Abstract: AbstractThis paper presents the optimization of reflectance in Braggs grating on silicon-on-insulator (SOI) structure at wavelength 1.55 μm using plane wave expansion method. It is seen that reflectance’s differ on different SOI structures. Simulation result reveals that polymer-air grating SOI structure having a period of 0.5 mm, grating length of 2 cm is matched with experimental results and it is found that better agreement than any other results in literature.Keywords: …

    Published in Trends in Opto-electro & Optical Communication · Vol. 3, Issue 2, 2013 · pp. 30–35 Read article

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    Optimization of Power in SG-SOI Structure at 1550 nm for Nanophotonic Application

    By Gopinath Palai, S. K. Sahoo

    Abstract: AbstractOptical power of semiconductor grating silicon-on-insulator (SG-SOI) at 1550 nm is investigated in this paper. The power of SG-SOI structure is calculated using plane wave expansion (PWE) method. Simulation result reveals that optical power is more than 99.9% in all SG-SOI structure. Simulation result shows that suitable combinations of grating layers play vital role to obtain high optical power.Keywords: SG-SOI, PWE, power

    Published in Trends in Opto-electro & Optical Communication · Vol. 3, Issue 2, 2013 · pp. 22–24 Read article

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    Analytical Analysis for Porous Silicon to Compute Porosity Using Optical Sensing Device

    By Gopinath Palai, Bhopendra Singh

    Abstract: This paper investigates the percentage of porosity in silicon using optical device. During the measurement of porosity, reflections as well as absorption losses are included to find out the transmitted intensity. Analytical results for the same reveals that reflectance, absorbance as well as transmittance vary linearly with respect to different percentage of porosity in the silicon. It is also seen that transmitted intensity through silicon varies linearly with respect to …

    Published in Recent Trends in Sensor Research & Technology · Vol. 4, Issue 2, 2017 · pp. 1–5 Read article

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