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190 articles for “transistor”
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An overview of Nanocrystalline Hydrogenated Silicon Thin film Transistor
Abstract: This article elaborates and comprehends an overview on nc-Si:H TFT's, detailing and highlighting the topics like fabrication methodology, properties/stability, modelling, characterization techniques, challenges and futuristic scope/applications.With the growing demands in commercialization of Solar Cells (low-cost photo voltaic devices), Large Area Displays (like OLED’s), Thin film electronics (FPD applications), pixel switches, wearable/flexible electronics and so on, has prompted researchers to develop nc-Si:H TFT's (an alternative solution) which can out perform the …
Published in Nano Trends – A Journal of Nano Technology & Its Applications · Vol. 27, Issue 2, 2025 · pp. 1–23 Read article
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Investigation of Pass Transistor Logic and CMOS Logic Configuration Based D-Multiplexers
Abstract: Pass Transistor Logic (PTL) arrangement depicts a few rationale families utilized in the plan of incorporated circuits. It lessens the include of transistors utilized making distinctive rationale entryways, by killing excess transistors. The pass transistor is driven by an intermittent clock flag and goes about as an entrance change to ON (1) or OFF (0), contingent upon the information flag. The utilization of pass transistor rationale has brought about noteworthy …
Published in Journal of Microelectronics and Solid State Devices · Vol. 9, Issue 2, 2022 · pp. 1–8 Read article
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Influence of Dielectric and Active layer Thickness on MgZnO Thin Film Transistor Electrical Characteristics
Abstract: From last decades, Thin Film Transistors Technology uses low-k dielectric material as an insulator. Insulator thickness plays an important role in device dimension. The insulating layer also known as the gate oxide separates the gate electrode from the channel region of the transistor. If the insulating layer is too thin, there is a greater chance that electrons can tunnel through the oxide layer, leading to leakage current. To mitigate this …
Published in Journal of Polymer & Composites · Vol. 11, Issue 5, 2023 · pp. 17–26 Read article
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Carbon Nanotube Transistor Based Novel Ring Oscillator with Minimum Power Consumption at 32 nm Technology Node
Abstract: In this article an analysis of carbon nanotube field effect transistor based ring oscillator is performed. After analysis it was found that carbon nanotube transistor consumes less power in comparison to silicon transistor. CNFET is one possible candidate to substitute silicon-based integrated circuit (IC) technology, as the performance increase of conventional transistors witnessed during the last decades will arrive at its ultimate limits in the near future. Its present progress …
Published in Journal of VLSI Design Tools and Technology · Vol. 7, Issue 3, 2017 · pp. 51–54 Read article
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Computer Modeling of Organic Thin Film Transistors (OTFTs) using Verilog-A
Abstract: AbstractOrganic electronics has drawn considerable attention of the researchers with organic thin film transistors (OTFTs) as key components for various applications. Compared to the silicon industry where public models are well defined and commonly used to provide designers with a relative good description of any process, organic devices are still lacking for their complete device models that can fully describe their electrical characteristics. Therefore, compact model development for OTFTs is …
Published in Journal of Microelectronics and Solid State Devices · Vol. 5, Issue 1, 2018 · pp. 1–7 Read article
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Carbon Nanotube Transistor Based Novel Ring Oscillator with Minimum Power Consumption at 32 nm Technology Node
Abstract: In this article an analysis of carbon nanotube field effect transistor based ring oscillator is performed. After analysis it was found that carbon nanotube transistor consumes less power in comparison to silicon transistor. CNFET is one possible candidate to substitute silicon-based integrated circuit (IC) technology, as the performance increase of conventional transistors witnessed during the last decades will arrive at its ultimate limits in the near future. Its present progress …
Published in Journal of VLSI Design Tools and Technology · Vol. 7, Issue 2, 2017 · pp. 51–54 Read article
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Studies on the Variations of Drain Current in Gallium Nitride based High Electron Mobility Transistors
Abstract: AbstractIn this work, total 2477 individual simulation outputs are reported. Variations in drain current with respect to the electrical parameters (drain voltage and gate voltage) and structural parameters of high electron mobility transistors (HEMTs) have been studied. The drain current is higher corresponding to larger aluminium mole fraction. This study will be useful to fabricate the HEMT based biomedical sensors.Keywords: Drain current, drain voltage, gate voltage, high electron mobility transistorCite …
Published in Journal of Microwave Engineering and Technologies · Vol. 5, Issue 1, 2018 · pp. 13–24 Read article
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Modelling and Electrical Characterization of Single Electron Transistor
Abstract: A nano-electronic device with low power consumption, high performance, and quantum effects is the single electron transistor (SET). It's used in charge sensor applications, infrared radiation detectors, and spectroscopy. However, it faces limitations in lithography, co-tunneling effect, low gain, high output impedance, and background charges. Therefore, prior simulation is needed to optimize SET's work function and understanding physics concepts. A master equation approach is used to propose a new model …
Published in Journal of Semiconductor Devices and Circuits · Vol. 10, Issue 3, 2024 · pp. 19–25 Read article
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Cluster Based Sleep Transistor Approach for Low Power 6T SRAM Cell
Abstract: The demand of high density VLSI circuits has been increasing as the size of ICs is becoming small day by day. It has been seen that, to reduce active power dissipation in memory, the supply voltage reduction is necessary. Lowering the supply voltage is one of the most straightforward and effective ways to suppress the energy consumption because reducing the supply voltage could reduce the dynamic power and leakage power …
Published in Journal of VLSI Design Tools and Technology · Vol. 6, Issue 1, 2016 · pp. 41–48 Read article
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Improvements in Analog Performance of Dual Metal Gate based Silicon-on-Insulator Junctionless Transistor with Pocket Doped Window
Abstract: This paper elucidates the impact of the pocket doped window on the analog performance of dual metal gate based silicon-on-insulator junctionless transistor (DMG SOIJLT). The analog parameters of the proposed SOIJLT are compared with DMG based conventional SOIJLT. The findings of analog performance comparison reveal that transconductance (gm), transconductance generation factor (TGF), output conductance (gd), output resistance (r0), intrinsic gain (AV), and cut-off frequency (fT) have improved for DMG PD-SOIJLT …
Published in Journal of Microelectronics and Solid State Devices Read article
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Improvements in Analog Performance of Dual Metal Gate based Silicon-on-Insulator Junctionless Transistor with Pocket Doped Window
Abstract: This paper elucidates the impact of pocket doped window on the analog performance of dual metal gate based silicon-on-insulator junctionless transistor (DMG SOIJLT). The analog parameters of proposed SOIJLT is compared with DMG based conventional SOIJLT. The findings of analog performance comparison reveal that transconductance (gm), transconductance generation factor (TGF), output conductance (gd), output resistance (r0), intrinsic gain (AV), and cut-off frequency (fT) have improved for DMG PD-SOIJLT as compared …
Published in Journal of Microelectronics and Solid State Devices · Vol. 8, Issue 1, 2021 · pp. 1–8 Read article
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Performance Improvement of Nano Field Effect Transistor Based on Zinc Oxide Semiconducting Materials – a Critical Analysis
Abstract: New semiconductor materials and new shapes for contemporary nanostructured semiconductor devices, like nanowires, have been researched as a result of advancements in transistor technology. Because of their unique electrical, photonic, and sensing capabilities, nanowires (NWs) constructed of various semiconductor material systems (gallium arsenide, zinc oxide, etc.) have been the subject of intense research over the past 20 years. Due to its distinctive properties, including high electron mobility, high crystalline quality, …
Published in Journal of Polymer & Composites · Vol. 12, Issue 2, 2024 · pp. 99–107 Read article
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Design and Simulation of 4-bit Multiplier using Carry Look-Ahead Adder at Transistor Level
Abstract: Multiplication is a basic operation performed in the Arithmetic Logic Unit, Digital signal processing, Floating-point unit and Application specific integrated circuits. This paper deals with the design and simulation of the 4-bit multiplier using a carry look-ahead adder at the transistor level. The total design process involves hierarchical implementation. Where the basic gate operations like AND, OR, NOT, and XOR are repeatedly used for designing the entire circuit. So, the …
Published in Journal of VLSI Design Tools and Technology · Vol. 11, Issue 3, 2021 · pp. 10–18 Read article
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Optimization and Analysis of InGaAs Vertical Nanowire Transistor for Memory Array Applications
Abstract: In this paper, we present a cylindrical gate all around In 0.53 Ga 0.47 As Vertical Nanowire Transistor (VNWT) on silicon at ultra-shortchannel gate length 14nm by numerical simulation approach. The In 0.53 Ga 0.47 As VNWT device dimensions like diameter, source and drainextension length and channel doping are taken as critical process parameters and optimized for better performance. The proposed device isscalable up-to 10nm with a maximum On-current of …
Published in Journal of VLSI Design Tools and Technology · Vol. 13, Issue 2, 2023 · pp. 32–44 Read article
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Metal Oxide Based Thin Film Transistors for Transparent and Flexible Electronics: Critical Review
Abstract: AbstractTransparent and flexible electronics is new emerging research area. Various technologies are available for thin film transistors (TFT). Metal oxide semiconductors are suitable because of their high optical transparency, good electrical performance etc. These devices have advantages of a-Si and organic materials also. Advantages of these devices are low cost, low process complexity and temperature, and large-area scalability and large carrier mobility. In this paper research work is compared. This …
Published in Journal of Electronic Design Technology · Vol. 9, Issue 1, 2018 · pp. 30–40 Read article
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On a Nanocomposite Metal Oxide Thin-film Transistor with Nanofilm Gate Dielectric Material: Material Chemistry, Sol–Gel Process and Electronic Worthiness
Abstract: ABSTRACT : ILO based MOTFT is fabricated with PBZ gate dielectric. PBZ is formed over doped Si substrate by cheap sol-gel process. Thin film PBZ is analysed with XRD, UV-Vis and AFM. IZO is used as bottom gate to contact TFT. This device needs only 5V as operating voltage, and so is good for lower electronics <40V. It shows excellent e-mobility 4.5cm2/V/s, with on/off ratio 5x105 and sub-threshold swing 0.35V/decade.
Published in Journal of Thin Films, Coating Science Technology & Application · Vol. 6, Issue 3, 2019 · pp. 8–12 Read article
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Comparative Analysis of Class-AB Voltage Follower using DTMOS Transistor
Abstract: This paper describes a topology of voltage follower Class-AB Voltage Follower like Translinear voltage follower using MOS and DTMOS Transistor. The circuits are simulated in 90 nm technology. The results are used to compare the performance of the above voltage followers. All analysis was supported by the simulation results. The analysis are made in terms of gain, bandwidth and transient response using ELDO spice, IC station and Design architect of …
Published in Journal of VLSI Design Tools and Technology · Vol. 5, Issue 2, 2015 · pp. 64–70 Read article
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Modeling and Simulation of Pentacene based Organic Thin Film Transistors with Organic Gate Dielectrics
Abstract: AbstractTwo structures of pentacene organic thin film transistors (OTFT) with organic dielectrics, polymethyl methacrylate (PMMA) and polyvinyl alcohol (PVA) have been numerically simulated with TCAD ATLAS tool. Output and transfer characteristics were simulated and mobility, threshold voltage, sub threshold swing (SS) and current on/off ratio that play a part in the increment of conductivity of device were extracted. The authors show that the semiconductor-insulator interface actively affects the performance of …
Published in Journal of Microelectronics and Solid State Devices · Vol. 4, Issue 3, 2017 · pp. 13–18 Read article
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Numerical Simulation and Modeling of Graphene Field Effect Transistors for High Frequency Applications
Abstract: AbstractIn this paper numerical simulation of graphene field effect transistor (GFET) has been performed using finite element method by solving Poisson's equation, continuity equation and energy balance equation self consistently. Various performance characteristics including charge distribution, band gap energy, transfer and output characteristics, electrostatic potential distribution and transconductance have been extracted.Keywords: Graphene field effect transistor (GFET), energy balance equation, mobility, ambipolar, numerical simulationCite this ArticleAshish Jha, Dwivedi ADD. Numerical Simulation …
Published in Journal of Microelectronics and Solid State Devices · Vol. 5, Issue 1, 2018 · pp. 27–33 Read article
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Performance Analysis of Complimentary Pass Transistor Logic Based Multiplexer Using Dual-gate FinFET Technology
Abstract: AbstractThis paper presents the design and analysis of double gate FinFET complimentary pass transistor logic (CPL) multiplexer. The circuit of multiplexer (MUX) using CPL is used for comparison of performance parameters like average power consumption, rise/fall time, delay, slew rate, PDP and EDP. Multiplexer is a digital circuit, it has inputs and select line; select lines are used for select input lines to transfer data to the output end. The …
Published in Journal of Microelectronics and Solid State Devices · Vol. 5, Issue 1, 2018 · pp. 41–48 Read article