On a Nanocomposite Metal Oxide Thin-film Transistor with Nanofilm Gate Dielectric Material: Material Chemistry, Sol–Gel Process and Electronic Worthiness

A. Kanni Raj

doi:10.37591/jotcsta.v6i3.3481

Journal of Thin Films, Coating Science Technology & Application

On a Nanocomposite Metal Oxide Thin-film Transistor with Nanofilm Gate Dielectric Material: Material Chemistry, Sol–Gel Process and Electronic Worthiness

A. Kanni Raj

Abstract

ABSTRACT : ILO based MOTFT is fabricated with PBZ gate dielectric. PBZ is formed over doped Si substrate by cheap sol-gel process. Thin film PBZ is analysed with XRD, UV-Vis and AFM. IZO is used as bottom gate to contact TFT. This device needs only 5V as operating voltage, and so is good for lower electronics <40V. It shows excellent e-mobility 4.5cm2/V/s, with on/off ratio 5x105 and sub-threshold swing 0.35V/decade.

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How to cite

A. Kanni Raj. On a Nanocomposite Metal Oxide Thin-film Transistor with Nanofilm Gate Dielectric Material: Material Chemistry, Sol–Gel Process and Electronic Worthiness. Journal of Thin Films, Coating Science Technology & Application. 2020;6(3):8–12. https://doi.org/10.37591/jotcsta.v6i3.3481

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Article details

Journal: Journal of Thin Films, Coating Science Technology & Application
Issue: Volume 6, Issue 3 (2019)
Pages: 8–12
Published: Jan. 17, 2020
DOI: 10.37591/jotcsta.v6i3.3481