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44 articles for “semiconductor metal oxides”
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GaN-based Sub-10 nm Metal-Oxide-Semiconductor Field-Effect Transistors
Abstract: Gallium nitride (GaN) based metal-oxide semiconductor field-effect transistors (MOSFETs) are promising for digital logic applications. The performance has been evaluated with different gate lengths (7~10 nm). The gate voltage is varied to turn ON and turn OFF at 1 and 0 V, respectively. For a gate length of 10 nm, the ON-current (ION) and OFF-current (IOFF) are found to be 6.86 mA/μm and 5.15x10-7 A/μm, respectively with a applied drain …
Published in Journal of Semiconductor Devices and Circuits · Vol. 3, Issue 1, 2016 Read article
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Complementary Metal Oxide Semiconductor Readout Integrated Circuit for Imaging Applications
Abstract: In this paper presents a novel continuous-time simultaneous-readout scheme for active imaging systems based on orthogonal modulation of photo detector signals. The superimposed-continuous-time approach presented here differs from the conventional scheduled-discrete-time scheme in that the photo detector signals are summed in a common bus concurrently and then converted to voltage levels for digitization. We illustrate that our proposed architecture may be profitable. Predominantly, in solicitations, the bandwidth necessities for a …
Published in Journal of Semiconductor Devices and Circuits · Vol. 2, Issue 2, 2015 · pp. 5–8 Read article
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Synthesis and Characterisation of Ceria Doped Titania Catalyst for the Degradation of Methylene Blue
Abstract: Photocatalytic degradation of Methylene Blue (MB) dye using synthesized ceria doped titania catalyst was performed and results were interpreted. The photocatalyst was prepared by incipient wet impregnation method, using cerium nitrate and titanium dioxide as the starting materials. The synthesized catalyst was characterized by powder X-ray diffraction (XRD), Vibrating sample magnetometer analysis (VSM), UV-Vis Diffuse reflectance measurements (DRS-UV) and UV analysis. The XRD pattern indicated that the sample has a …
Published in Journal of Water Pollution & Purification Research · Vol. 7, Issue 3, 2020 · pp. 26–33 Read article
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High Speed and Low Power Basic Digital Logic Gates, Half-Adder and Full-Adder Using Modified Gate Diffusion Input Technology
Abstract: In this paper, modified gate diffusion input (MGDI) technology has been used for the design and implementation of digital integrated circuits (ICs). In today’s digital world, IC plays a vital role in high-performance computing, communication, and many consumer electronics. IC manufacturing technology has scaled down to smaller device dimensions. This scaling has a great impact on the design of digital ICs. The main objective of the IC manufacturing technology is …
Published in Journal of VLSI Design Tools and Technology · Vol. 8, Issue 1, 2018 · pp. 34–42 Read article
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Switched Capacitor-based RC Filter
Abstract: Today we know that the demand of low voltage for low power integrated circuits (ICs) are used for growing the portable equipment in all the markets including telecommunication, computers and customer electronics with smaller size. The low voltage need for ICs is also motivated by the new dip submicron complementary metal oxide semiconductor (CMOS) technology scaling that required all transistors of smaller size. In current years, a lot of researches …
Published in Journal of VLSI Design Tools and Technology · Vol. 6, Issue 1, 2016 · pp. 32–40 Read article
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Advanced Mathematical Modelling of Nanoscale Semiconductor Devices for Low-Power Microelectronic Applications
Abstract: With the ongoing scaling down of semiconductor devices, there is an increasing need for accurate mathematical models of electrostatic control, carrier transport, leakage current, and power consumption at the nanometer scale. As the sizes of semiconductors continue to decrease, there is a growing need for accurate mathematical models of electrostatic control, carrier transport, leakage current, and power consumption at the nanometer scale. In this work, a common mathematical modelling approach …
Published in Journal of Microelectronics and Solid State Devices · Vol. 13, Issue 2, 2026 Read article
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Machine Learning Assisted Optimization of Nanoscale MOSFET Parameters Using TCAD Simulation
Abstract: This paper presents a machine learning (ML) assisted framework for the multi-objective optimization of nanoscale bulk n-channel metal-oxide-semiconductor field-effect transistors (nMOSFETs) with a 10 nm physical gate length, high-k HfO₂ gate dielectric, and TiN metal gate. Technology computer-aided design (TCAD) simulations employing drift-diffusion transport, Shockley-Read-Hall recombination, Lombardi mobility degradation, and density- gradient quantum correction models are used to generate a parametric dataset of 2,400 device configurations spanning gate length (L), …
Published in Journal of Microelectronics and Solid State Devices · Vol. 13, Issue 1, 2026 · pp. 10–19 Read article
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Performance Analysis of Schmitt Trigger Circuit for Noise-Free Chips
Abstract: At lower nodes of complementary metal-oxide semiconductor (CMOS) technology, noise within a chip increase due to a drastic increment in interconnects within a given area. To improve the noise immunity of a chip, a Schmitt trigger circuit is used as a buffer instead of a simple CMOS inverter at various intervals along the metal interconnect. The use of a Schmitt trigger circuit not only makes the chip noise immune but …
Published in Journal of VLSI Design Tools and Technology · Vol. 14, Issue 3, 2024 · pp. 11–20 Read article
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Non-Invasive Diabetes Test by Breath Analysis using Semiconductor Gadget
Abstract: AbstractNon-invasive detection of diabetes via acetone sensing using nanostructure semiconductor metal oxides (SMO) is an alternative fast and direct method to invasive blood analysis. It is a reliable and accurate technology. Of late, graphene and graphene oxides are promising nanomaterials for acetone sensing.Keywords: Non-invasive diabetes; Breath analysis, Acetone sensing; Nano materials.Cite this ArticleSurajit Kumar Hazra, Sukumar Basu. Non-Invasive Diabetes Test by Breath Analysis using Semiconductor Gadget. Journal of Semiconductor Devices …
Published in Journal of Semiconductor Devices and Circuits · Vol. 7, Issue 2, 2020 · pp. 20–22 Read article
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Employment of Solid-State Technology in Sensor Design: A Study
Abstract: The rapid evolution of sensor technologies has been driven by the demand for more precise, durable, and compact systems to meet the needs of modern industries, healthcare, and consumer electronics. Solid state technologies have emerged as a transformative force in sensor design, offering unprecedented performance, reliability, and integration potential. Unlike traditional sensors, which often rely on mechanical, electrochemical, or piezoelectric principles, solid state sensors leverage the intrinsic properties of materials …
Published in International Journal of Solid State Innovations & Research · Vol. 3, Issue 2, 2025 · pp. 31–41 Read article
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Metal Oxide Based Thin Film Transistors for Transparent and Flexible Electronics: Critical Review
Abstract: AbstractTransparent and flexible electronics is new emerging research area. Various technologies are available for thin film transistors (TFT). Metal oxide semiconductors are suitable because of their high optical transparency, good electrical performance etc. These devices have advantages of a-Si and organic materials also. Advantages of these devices are low cost, low process complexity and temperature, and large-area scalability and large carrier mobility. In this paper research work is compared. This …
Published in Journal of Electronic Design Technology · Vol. 9, Issue 1, 2018 · pp. 30–40 Read article
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Mathematical Modelling of Semiconductor Device Physics: An Analytical Approach
Abstract: Semiconductor device physics forms the foundation of modern electronic and optoelectronic technologies. Mathematical modelling provides a rigorous framework for understanding, predicting, and optimizing the behavior of semiconductor devices by linking physical principles with device-level performance. This work presents an analytical approach to the mathematical modelling of semiconductor devices, emphasizing the derivation and interpretation of governing equations that describe charge transport and electrostatic behavior. The model is based on fundamental physical …
Published in Research & Reviews: Discrete Mathematical Structures · Vol. 13, Issue 1, 2026 · pp. 36–42 Read article
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Design and Implementation of High-Speed Low Power Low Area Hybrid One Bit Full Adder Using CMOS Technology
Abstract: In this article, we'll take a look at a new kind of Full Adder (FA) design that mixes traditional Complementary Metal Oxide Semiconductors (CCMOS) with Pass Transistors (PTs) and Transmission Gates (TGs). To analyze the circuit's performance, we used the Mentor Graphics software package. Since all twenty (20) varieties of Full Adder circuits were able to be measured and compared, this research was conducted. When the clock rate of the …
Published in International Journal of VLSI Circuit Design & Technology · Vol. 1, Issue 2, 2023 · pp. 29–39 Read article
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Synergistic Integration of MEMS and Spintronics for Precision Data Analytics in Cheminformatics
Abstract: The transformational potential of merging spintronics and Micro-Electromechanical Systems (MEMS) technologies in cheminformatics is investigated in this work. Recent advancements in MEMS, particularly through the use of microbeam sensors and accelerometers, enhance the precision of data collection and processing, especially in biomedical applications such as drug delivery systems and chemical sensing. The synchronization of oscillations in MEMS devices leads to improved reliability and data accuracy, enabling the development of sophisticated …
Published in International Journal of Cheminformatics · Vol. 2, Issue 1, 2024 · pp. 20–26 Read article
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Design and Optimization of Nano scale Double Gate SOI-MOSFET for Analog Applications Using SILVACO TCAD
Abstract: In this paper the structure effect on electrical characteristics of 60-nm double-gate Silicon-on-Insulator Metal-Oxide-Semiconductor Field Effect Transistor (DG-SOI-MOSFETs) is explored. These structures enable more aggressive device scaling in nano scale region because of their ability to control short channel effects. Established a scaling theory which gives guidance for the device optimization (Silicon film thickness Tsi (20nm); gate oxide thickness Tox (3nm); buried oxide thickness Tbox (200nm) and gate length LG …
Published in Journal of Electronic Design Technology · Vol. 1, Issue 1-3, 2011 · pp. 7–17 Read article
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Analysis and Characterization of Circuits for Leakage Power Reduction at Sub-50 nm in CMOS Circuits
Abstract: This paper analyzes various techniques to decrease leakage power in complementary metal oxide semiconductor (CMOS) very large scale integration (VLSI) circuits, because due to continuous scaling of CMOS technology there is improvement in speed of semiconductor devices and the side effect of this scaling is leakage power. With the development of technology in CMOS VLSI Circuit, length of transistors has been reduced and speed of operation is increasing simultaneously. As …
Published in Journal of Electronic Design Technology · Vol. 13, Issue 2, 2022 · pp. 11–22 Read article
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Swing Restored Low Power and Area Efficient 8-bit Arithmetic Logic Unit Using Modified Gate Diffusion Input Technique
Abstract: AbstractThe arithmetic logic unit (ALU) is one of the most fundamental operational units in any processor. The ALU is the heart of any system or any processor and the core component of the central processing unit because mainly all the fundamental operations are performed by the help of ALU only. So, it can be defined as the combinational unit that is used to perform its logical and arithmetic units. The …
Published in Journal of Microcontroller Engineering and Applications · Vol. 5, Issue 2, 2018 · pp. 19–29 Read article
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Solid State Technology Reinvents Microwave Heating
Abstract: Since magnetrons first came into widespread commercial use in microwave ovens in the early 1970s solid state technology has evolved relatively slowly to be used in industrial heating, consumer cooking, drying, automotive applications etc. Recently, RF energy utilizing solid state devices has appeared in the market as a viable replacement for magnetrons as the heating engine. This route offers many advantages like better energy direction control, longer life, enhanced reliability, …
Published in Journal of Microelectronics and Solid State Devices · Vol. 9, Issue 1, 2022 · pp. 6–15 Read article
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MOS Capacitor: A Processing Tool
Abstract: In this modern world of technology, life without electronics is unimaginable. We are now living in the age of electronics. It is hard to find an electrical item in your home that does not have electronics part in it. The electronic devices give better efficiency and reliability in terms of power loss, speed and cost; the fundamental component of each Integrated Circuit (IC) chip, namely the MOSFET (metal oxide semiconductor …
Published in Journal of Semiconductor Devices and Circuits · Vol. 5, Issue 1, 2018 · pp. 27–32 Read article
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Recent Development in Ga2O3 MOSFETs for High Power RF Applications
Abstract: Abstract: This paper attempts to investigate the property of recently reported gallium oxide as a high power RF device by studying its related high power RF characteristics, and suggest a path to develop metal-oxide-semiconductor field effect transistor (MOSFET). Keywords: MOSFETs, Wide Band Gap Semiconductors, Gallium Oxide and RF ICsCite this ArticleNarendra Yadava, R.K Chauhan. Recent Development in Ga2O3 MOSFETs for High Power RF Applications. Journal of Semiconductor Devices and Circuits …
Published in Journal of Semiconductor Devices and Circuits · Vol. 6, Issue 1, 2019 · pp. 21–25 Read article