Search
283 articles for “Semiconducting”
-
High Reflectivity Semiconductor-glass Grating Structure for SOI Application
Abstract: AbstractHigh reflectance of semiconductor-glass (GaAs-BSG, InP-FS, GaAs-FS, Ge-BK7, Ge-BSG) grating SOI structure at wavelength 1.55 µm is thoroughly investigated in this paper. Simulation result showed that, reflectivities are 99.01, 99.03, 99.20, 99.29 and 99.47% at wavelength 1.55 µm for GaAs-BSG, InP-FS, GaAs-FS, Ge-BK7, Ge-BSG grating SOI structure, respectively. This simulation is carried out using plane wave expansion method. Present simulation gives effective result as compared to existing result.Keywords: semiconductor-glass grating, …
Published in Trends in Opto-electro & Optical Communication · Vol. 3, Issue 3, 2013 · pp. 9–12 Read article
-
Design and Performance of Semiconductor-Biosensor
Abstract: In this work, a high electron mobility transistor (HEMT) based biosensor is designed to detect the virus-protein. In this work, all the simulation-studies are carried out in the SILVACO-ATLAS physical simulator using the following models: Shockley Read Hall (SRH), band gap narrowing, Auger recombination, and Fermi Dirac statistics. Newton trap numerical solver is used in the device simulation. Conduction band engineering of the biosensor is studied. DC and RF properties …
Published in Journal of Semiconductor Devices and Circuits · Vol. 8, Issue 2, 2021 · pp. 1–13 Read article
-
Reflectance analysis for SOI application using semiconductor materials
Abstract: This work comprehensively investigates the high reflectance of semiconductor-glass (InP-FS, GaAs-BSG, Ge-BK7, Ge-BSG,GaAs-FS) grating SOI structure at wavelength 1.55m. The simulation results indicated that the reflectivities for InP-FS, Ge-BSG, Ge-BK7, GaAs-FS, and GaAs-BSG grating SOI structures are 99.01 percent, 99.03 percent, 99.20 percent, and 99.29 percent, 99.47 percent at wavelength 1.55m, respectively. The plane wave expansion approach is used in this simulation. When compared to the old outcome, the current …
Published in Journal of Semiconductor Devices and Circuits · Vol. 9, Issue 1, 2022 · pp. 34–38 Read article
-
Simple Gain Model of Group III-V Semiconductor-based Laser Diode
Abstract: In these days, a layer of low bandgap material is sandwiched between two high bandgap layers.Most commonly-used pair of materials is gallium arsenide (GaAs) with aluminium galliumarsenide (AlGaAs) and Indium Phosphide (InP) with Indium gallium arsenide phosphide(InGaAsP) laser. A heterostructure is the junctions between different bandgap materials. Here,two such junctions are present, hence it is called the name "double heterostructure laser" orDH laser. The kind of laser diode may be …
Published in Recent Trends in Electronics Communication Systems · Vol. 7, Issue 3, 2020 · pp. 9–27 Read article
-
Physics of Semiconductors and Electronic Circuits
Abstract: This study talks about the basic ideas behind semiconductor physics and how important they are for making and running modern electronic circuits. It starts with a look at intrinsic and extrinsic semiconductors, going into how charge carriers move, energy band theory, and how doping affects how well the electricity flows. Next, the conversation turns to semiconductor devices like diodes, bipolar junction transistors (BJTs), and field-effect transistors (FETs). The focus is …
Published in Journal of Semiconductor Devices and Circuits · Vol. 12, Issue 2, 2025 · pp. 9–17 Read article
-
PREDICTIVE MAINTENANCE IN SEMICONDUCTOR SYSTEMS: INSIGHTS FROM MACHINE INTELLIGENCE AND DATA-DRIVEN METHODS
Abstract: With the fast-paced development of semiconductor technology comes the need to focus on device reliability, or how long devices will function and the likelihood of devices having operational issues. Predicting failures and avoiding downtime with the implementation of timely, actionable, and data-driven maintenance strategies are essential to insure devices function sustainably within predetermined performance levels. The implementation of predictive maintenance within artificial intelligence and machine learning technologies will provide the …
Published in Journal of Semiconductor Devices and Circuits · Vol. 13, Issue 1, 2026 · pp. 1–9 Read article
-
Semiconductor Nanostructures and Ferrocene; Pillars of Bioelectronics and Biomedicine
Abstract: The semiconductor nanostructures are studied due to their fascinating new property in the perspective of nanotechnology. The properties of semiconductor structures can be altered by external rheological conditions. This article presents an overview of semiconductor nanostructures and their properties, such as electrical, magnetic, and optical properties of semiconductors. Moreover, it presents an intuitive description of a variety of semiconductor nanostructures and ferrocene. The quests for medical and electronic applications of …
Published in Journal of Nanoscience, NanoEngineering & Applications · Vol. 15, Issue 1, 2025 · pp. 47–54 Read article
-
The Comprehensive Study of Gallium Nitride (GaN) Semiconductor Technology
Abstract: Silicon is an important material in the field of semiconductors because of its special qualities. It has good semiconductor properties, is affordable, and can be found easily. However, it is becoming clear that silicon-based devices are reaching their limits in terms of what they can do. As a result, the search of alternative materials has been initiated. Gallium Nitride (GaN) is one such material. GaN is a type of semiconductor …
Published in Journal of VLSI Design Tools and Technology · Vol. 13, Issue 2, 2023 · pp. 1–11 Read article
-
Silicon Symphony: The Science of Semiconductors Circuits
Abstract: Modern electronics are built on the foundation of semiconductor circuits, which precisely and efficiently control the flow of electrical impulses. This article takes a look at the underlying physics of semiconductor materials and how their unique electrical properties allow the design and functioning of diodes, transistors and integrated circuits. This study links microscopic scientific principles to the behaviour of real circuits. It considers essential concepts such as charge carriers, doping …
Published in International Journal of Solid State Innovations & Research · Vol. 4, Issue 1, 2026 Read article
-
Recent Innovations in Semiconductor Materials for Smart Electronic Devices
Abstract: Recent advancements in semiconductor materials have significantly transformed the design, performance, and functionality of smart electronic devices such as smartphones, wearable systems, IoT devices, autonomous systems, and biomedical electronics. With the continuous demand for higher processing speed, lower power consumption, improved thermal stability, and extreme miniaturization, traditional silicon-based semiconductor technology is facing major limitations. As device dimensions shrink to the nanometer scale, challenges such as leakage current, heat dissipation, and …
Published in Journal of Semiconductor Devices and Circuits · Vol. 13, Issue 2, 2026 · pp. 1–11 Read article
-
Bandgap Analysis of Quasi Bandgap Semiconductor Using FDTD Technique
Abstract: In this work photonic bandgap analysis of boron nitride (BN) quasi bandgap semiconductor is investigated using finite difference time domain (FDTD) method. Here boron nitride semiconductor is cogitated as a-BN, h-BN, c-BN and w-BN semiconductor, where boron nitride is realized by the combination of two BN semiconductor layers separated by air. Simulation for photonic bandgap of the aforementioned semiconductor structure is carried out with respect to thickness of odd and …
Published in Journal of Microelectronics and Solid State Devices · Vol. 2, Issue 2, 2015 · pp. 1–4 Read article
-
Mathematical Modelling of Semiconductor Device Physics: An Analytical Approach
Abstract: Semiconductor device physics forms the foundation of modern electronic and optoelectronic technologies. Mathematical modelling provides a rigorous framework for understanding, predicting, and optimizing the behavior of semiconductor devices by linking physical principles with device-level performance. This work presents an analytical approach to the mathematical modelling of semiconductor devices, emphasizing the derivation and interpretation of governing equations that describe charge transport and electrostatic behavior. The model is based on fundamental physical …
Published in Research & Reviews: Discrete Mathematical Structures · Vol. 13, Issue 1, 2026 · pp. 36–42 Read article
-
Emerging Trends in Applications of Semiconductor Alloys in Wireless Communications
Abstract: AbstractArsenide semiconductor alloys provide a natural means of tuning the magnitude of the forbidden gap and other material parameters so as to optimise and widen the application of semiconductor devices. With the advent of small-structure systems, for instance quantum wells and superlattices, the special effects of alloy composition, size, device geometry, doping and controlled lattice strain can be collective to accomplish maximum tunability. In this article, the concepts and ideas …
Published in Journal of Semiconductor Devices and Circuits · Vol. 3, Issue 1, 2016 · pp. 31–41 Read article
-
Analysis of Six-Pulse Bridge Circuits Including Zener and Semiconductor Diodes Part One
Abstract: This paper addresses the analysis of electronic bridge circuits including Zener and/or semiconductor diodes. The analysis is based on recently suggested models for these diodes. A compact Mathematica code written in the Versions 7.0, 11.3 and 12.2 simulating a six-pulse rectifier bridge circuit is then derived and mathematically implemented. It investigates the time-domain transient and steady-state analysis of several representative case studies. In principle, the computer simulation can yield the …
Published in Journal of VLSI Design Tools and Technology · Vol. 12, Issue 1, 2022 · pp. 14–22 Read article
-
Unified Mathematical Framework for Semiconductor Devices, Junction Dynamics, and Circuit Analysis
Abstract: Semiconductor devices form the fundamental building blocks of modern electronic and integrated circuit systems, where their electrical behavior is governed by coupled carrier transport, electrostatic, and circuit-level phenomena. This work presents a unified mathematical framework for modeling semiconductor devices, junction dynamics, and their interaction with electronic circuits. The formulation integrates fundamental semiconductor relations, carrier concentration, drift–diffusion transport, Poisson’s equation, continuity equations, PN-junction behavior, diode characteristics, bipolar junction transistor operation, and …
Published in Journal of Semiconductor Devices and Circuits · Vol. 13, Issue 2, 2026 · pp. 37–47 Read article
-
Cohesive Energy of Chalcogenide and Pnictide Based Ternary Tetrahedral Semiconductors
Abstract: There is a great amount of interest in tertiary chalcopyrite semiconductors because of the potential uses they have in the field of optoelectronics. These applications include solar energy converters, detectors, light emitting diodes (LED), and non-linear optical devices (NLO). There are variety of ZnS Zinc blende types of superstructures in which one of the types is called chalcopyrite semiconductor. This study is based on the characteristics of the chalcopyrite semiconductor. …
Published in Journal of Polymer & Composites · Vol. 12, Issue 4, 2024 · pp. 192–197 Read article
-
Next-Generation Semiconductors: Making AI, 5G, and More Possible
Abstract: The current digital environment is being reshaped by next-generation semiconductors, which are powering revolutionary technologies including enhanced computing systems, 5G connectivity, and artificial intelligence. Next-generation semiconductors are at the heart of new technologies that are changing the world we live in today, such as artificial intelligence (AI), 5G communication, and advanced computer systems. As traditional silicon-based designs reach their limits in terms of size and performance, new materials, architectures, and …
Published in Journal of Semiconductor Devices and Circuits · Vol. 13, Issue 1, 2026 · pp. 27–40 Read article
-
A Review of Electrical Conduction, Optical Sensing, and Semiconductor Device Innovations
Abstract: Electrical conduction and semiconductor device technologies form the backbone of modern electronic and sensing systems. This review presents a comprehensive analysis of conduction mechanisms across different materials, including conductors, semiconductors, and insulators, with particular emphasis on charge carrier behavior, resistivity, and energy band structures. The study highlights how variations in material properties and external conditions influence electrical performance and device efficiency. The paper further explores advancements in semiconductor devices, focusing …
Published in Journal of Semiconductor Devices and Circuits · Vol. 13, Issue 1, 2026 · pp. 10–18 Read article
-
Computational Modeling of Polymer Semiconductors for Electronic Applications
Abstract: Polymer semiconductors have become important materials in modern electronic applications because they combine semiconducting behavior with mechanical flexibility, low-cost processing, and tunable molecular structure. Their growing use in organic field-effect transistors, organic photovoltaics, organic light-emitting diodes, and flexible sensing devices has increased the need for accurate computational approaches that can predict material properties and device performance before experimental fabrication. This paper reviews the major computational modeling techniques used for polymer …
Published in Journal of Polymer & Composites · Vol. 14, Issue 3, 2026 · pp. 132–146 Read article
-
Semiconduction detector for nuclear radiation
Abstract: This articulation has been study of radiation identification method by semiconductor. Radioactive transmutation originated radiation has scoped semiconductor to access energy exchange for generation of electron-hole pair to give rise semiconduction. Otherwise, electron and charged ion has collected to get signal to justify detection constitutive. Deficit of low atomic weight of Si and Ge to use as semiconductor detectors have schemed to secure through thick material preparation. In lieu, accessed …
Published in Journal of Nuclear Engineering & Technology · Vol. 12, Issue 1, 2022 · pp. 16–21 Read article