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210 articles for “(DOP)”
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Effect of Toxoplasma gondii on some Neurotransmitter Levels in Patients with Toxoplasmosis Infection
Abstract: Background: The study of Toxoplasma gondii on some neurotransmitter levels in patients with toxoplasmosis infection is one of the challenges of sustainable development. Toxoplasma gondii is a parasite that can alter host behavior by affecting neurotransmitters of the host. Aim: To diagnose if there are differences in neurotransmitter levels in infected people by toxoplasmosis and healthy people to predict the psychological and neurological diseases. Methods: The study included collecting 60 …
Published in Research and Reviews : A Journal of Life Sciences · Vol. 16, Issue 1, 2026 · pp. 1–8 Read article
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Design and Analysis of Quantum Dot Solar Cell Using SCAPS-1D Software
Abstract: Compared to conventional solar cells, quantum dot solar cells (QDSCs) have drawn a lot of attention due to their hybrid structure, low production cost, and greater power conversion efficiency. Nevertheless, carrier recombination in the quasi-neutral region (QNR) continues to limit their performance. The electron transport layer (ETL) and hole transport layer (HTL) are two of the layers that are most important in determining the overall efficiency of the device. The …
Published in Journal of Alternate Energy Sources & Technologies · Vol. 17, Issue 1, 2026 · pp. 15–20 Read article
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Synthesis, Characterization and Dielectric Properties of Polymer Materials for Microwave Communication Applications
Abstract: The rapid advancement in wireless communication technologies has necessitated the development of advanced materials with tailored dielectric properties. Polymer materials, because of their flexibility, lightweight nature, and processing ease, are currently being used in initiatives to formulate low-dielectric materials specifically tailored for microwave communication applications. In the current investigation, the authors concentrate on the synthesis, characterization, and dielectric properties of five distinct novel polymer materials. The synthesized polymers are characterized …
Published in Journal of Polymer & Composites · Vol. 14, Issue 1, 2026 · pp. 1482–1495 Read article
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Machine Learning Assisted Optimization of Nanoscale MOSFET Parameters Using TCAD Simulation
Abstract: This paper presents a machine learning (ML) assisted framework for the multi-objective optimization of nanoscale bulk n-channel metal-oxide-semiconductor field-effect transistors (nMOSFETs) with a 10 nm physical gate length, high-k HfO₂ gate dielectric, and TiN metal gate. Technology computer-aided design (TCAD) simulations employing drift-diffusion transport, Shockley-Read-Hall recombination, Lombardi mobility degradation, and density- gradient quantum correction models are used to generate a parametric dataset of 2,400 device configurations spanning gate length (L), …
Published in Journal of Microelectronics and Solid State Devices · Vol. 13, Issue 1, 2026 · pp. 10–19 Read article
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Fabrication and Comparative Study of Synthetic and Eggshell Waste Derived Hydroxyapatite-Based Composites for Biomedical Applications
Abstract: Hydroxyapatite is widely used as a bioceramic material in orthopedic and dental field because of its exceptional biocompatibility and bioactivity. Hydroxyapatite (HAp) doped with several mineral ions has been frequently reported to further enhance its bioactive nature. Several studies indicate that biological waste materials can serve as calcium sources for hydroxyapatite synthesis, with eggshells being one such promising source. In the present work, two types of hydroxyapatite were synthesized: pure …
Published in Journal of Polymer & Composites · Vol. 14, Issue 3, 2026 · pp. 33–46 Read article
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Gallium Nitride based HEMTs in Nano-Scale Regime
Abstract: AbstractIn this work, a maximum drain current of 557 mA is achieved by the simulated structures of double-heterojunction HEMTs using the SILVACO-ATLAS software tool. The drain current is found to be higher at shorter gate length. The drain current is observed as higher at larger aluminium mole fraction. The drain current is also higher at larger thickness of AlGaN barrier layer. Again, the drain current is higher at larger doping …
Published in Journal of Microelectronics and Solid State Devices · Vol. 5, Issue 3, 2018 · pp. 11–21 Read article
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Influence of Graded Channel on Performance of Symmetric Double Material Gate Insulator FDSOI MOSFET
Abstract: Abstract: In this paper, we investigate the effect on the linearity, analog and RF performance of graded channel in case of hetero-gate-dielectric FDSOI MOSFET with higher doping at source end and low doping at drain end. The major figure of merits (FOMs) studied are on-state drive current (ION), transconductance (gm), total gate capacitance (Cgg), cut-off frequency (fT), higher order derivative of transconductance (gm’, gm’’), intermodulation distortion (IMD3) and third- order …
Published in Journal of Microelectronics and Solid State Devices · Vol. 6, Issue 1, 2019 · pp. 12–17 Read article
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Thermally Responsive Electroluminescence in ZnS: Mn Phosphors: Experimental Insights
Abstract: ZnS: Mn phosphors and thin film technologies have been used to create alternative current thin film light emitters. Establishing a precise model for these devices becomes challenging because they rely on frameworks that have a definitive effect on the final product, such as the size of the molecules used, the phosphor fabrication process, and the doping concentration, the purity of ZnS, the device structure, and so forth. The ZnS: Mn …
Published in Journal of Microelectronics and Solid State Devices · Vol. 10, Issue 2, 2023 · pp. 9–14 Read article
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Electrical Conductivity and Antibacterial Studies on Chemically Synthesized Poly (2-Methyl Aniline-co-2-Chloro Aniline)-Blend-Polyurethane
Abstract: AbstractElectrically conducting copolymer blend, poly (2-methyl aniline-co-2-chloro aniline)-blend-polyurethane has been synthesized chemically by oxidative polymerization technique using 0.3 M ammonium persulphate (APS) as oxidant, 0.1 M of the anionic surfactant, sodium lauryl sulphate and 1 M HCl as dopant. The formation of the copolymer blend has been confirmed by comparison with the spectral data obtained for the copolymer which was synthesized under the same conditions and characterized. The copolymer blend …
Published in Journal of Polymer & Composites · Vol. 5, Issue 1, 2017 · pp. 7–14 Read article
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Effect of Electrochemically Synthesized Zno/CoO Nanocomposites on Optical, Electrical and Viscosity Properties of Polyvinyl Alcohol Films
Abstract: AbstractZnO/CoO nanocomposites doped poly vinyl alcohol films were prepared by casting method using water as a solvent. X-ray diffraction, IR spectroscopy UV-visible spectroscopy, and scanning electron microscopy techniques were used to characterize the synthesized nanocomposite films. Study of the structural changes and complexation of nanoparticles with polymer matrix were performed using X-ray and IR techniques. Optical characterization studies revealed a blue shift in the absorption edge with increasing nanoparticle concentration …
Published in Journal of Polymer & Composites · Vol. 4, Issue 2, 2016 · pp. 52–62 Read article
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Electrical Characteristics of AlGaN/GaN/AlGaN HEMTs
Abstract: AbstractA maximum drain current of 556 mA is achieved by the simulated structures of double-heterojunction AlGaN/GaN/AlGaN high electron mobility transistors (HEMTs) using the SILVACO-ATLAS software tool in this work. The drain current is observed as higher at shorter gate length. The drain current is found as higher at larger aluminium mole fraction. Also, the drain current is found as higher at larger thickness of AlGaN barrier layer. The drain current …
Published in Journal of Semiconductor Devices and Circuits · Vol. 5, Issue 3, 2018 · pp. 7–17 Read article
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Simulation of Threshold Voltage Variation of Enhancement Mode n-channel MOSFET
Abstract: AbstractThe paper focuses on simulation of variation of threshold voltage as a function of effective channel length of the short-channel MOSFETs with a Gaussian-like doping profile. An investigation of short channel effect (SCE) in deep submicron region has been carried out. The validity of the proposed simulation is shown by comparing the results with the numerical calculation and simulation of data obtained by using the commercially available simulation software. Finally, …
Published in Journal of Semiconductor Devices and Circuits · Vol. 4, Issue 2, 2017 · pp. 34–40 Read article
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Simulation Studies on the Electrical Characteristics of High Electron Mobility Transistors
Abstract: AbstractSimulation studies have been performed on the AlGaN/GaN high electron mobility transistor (HEMT) with AlN spacer layer. The current-voltage characteristics have been studied with respect to different gate voltages and different doping concentrations. Studies have been performed on the quantum well depth variation corresponding to the designed HEMTs.Keywords: Doping, drain current, drain voltage, quantum wellCite this ArticleSanjib Kalita, Ashish Prajapati, Susanta Sinha Roy, Jyoti Prasad Banerjee, James Andrew McLaughlin, Subhadeep …
Published in Journal of Semiconductor Devices and Circuits · Vol. 3, Issue 2, 2016 · pp. 32–36 Read article
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Electrical Characteristics of Nanoelectronic Double-Heterojunction High Electron Mobility Transistors
Abstract: AbstractIn this work, a maximum drain current of 554 mA is achieved by the simulated structures of double-heterojunction HEMTs using the SILVACO-ATLAS software tool. The drain current is found to be higher at shorter gate length and at larger aluminium mole fraction. The drain current is also higher at larger thickness of AlGaN barrier layer and at larger doping concentration of AlGaN barrier layer.In this work, the formation of 2-DEG …
Published in Journal of Semiconductor Devices and Circuits · Vol. 7, Issue 1, 2020 · pp. 18–28 Read article
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Effect of Spray Pyrolysis on the Properties of Chemically Sprayed CuO:Al Thin Films
Abstract: AbstractCuO:Al thin films were grown from 50 ml of spray solution on glass substrates by chemical spray at Ts=400°C using solution spray doping percentages of 0, 4, 5 and 6%. Copper acetate and aluminium chloride were used as Cu and Al sources, respectively. Independent of solution spray rate, the crystallites in CuO:Al films grow preferentially in the (201) plane, parallel to the substrates. The spray pyrolysis solution are using different …
Published in Journal of Thin Films, Coating Science Technology & Application · Vol. 4, Issue 1, 2017 · pp. 1–5 Read article
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Study of Nano Germanium and Composited Forms
Abstract: This article has reviewed refinement synergism to same as earlier bulk semi-conduction. Colloidal 5 nm suspension from photolysis and pyrolysis for aerogel of II-VI quantum dots has subsidized extinction contour of semiconductor nano-crystal. Thereby transitional has accused between 0.6 to 5 eV to access from size-dependent optical and electrical effect instead of precipitation technique. Structure-oriented electronic and optical property has relevance to nano-semiconductor preparation method synergistic to earlier bulk. Nano-crystals …
Published in Journal of Thin Films, Coating Science Technology & Application · Vol. 8, Issue 2, 2021 · pp. 8–15 Read article
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Performance Analysis of 3T DRAM Using FinFET Based with Leakage Reduction Techniques at 45 nm Technology
Abstract: The proposed area of research is to reduce the power consumption, leakage voltage, leakage current and leakage power of DRAM while maintaining the competitive performance. The Fin FET approach is used in DRAM for high performance. Fin type field effect transistors (Fin FET) are capable substitutes for bulk CMOS at the nano-scale. Fin FET are double gate device. A Fin FET uses an intrinsic body. It greatly suppresses the device-performance …
Published in Journal of VLSI Design Tools and Technology · Vol. 7, Issue 3, 2017 · pp. 28–34 Read article
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Performance Analysis of 3T DRAM Using FinFET Based with Leakage Reduction Techniques at 45 nm Technology
Abstract: The proposed area of research is to reduce the power consumption, leakage voltage, leakage current and leakage power of DRAM while maintaining the competitive performance. The Fin FET approach is used in DRAM for high performance. Fin type field effect transistors (Fin FET) are capable substitutes for bulk CMOS at the nano-scale. Fin FET are double gate device. A Fin FET uses an intrinsic body. It greatly suppresses the device-performance …
Published in Journal of VLSI Design Tools and Technology · Vol. 7, Issue 2, 2017 · pp. 28–34 Read article
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Design and Analysis of Dispersion Flattened Low Loss Photonic Crystal Fiber
Abstract: AbstractThis paper demonstrates the study of triangular lattice hexagonal photonic crystal fiber with GeO2 doped core. The photonic crystal fiber (PCF) studied in this research work has a core doped with 97% molar concentrated GeO2 with seven layers of air-capillaries around the core. The design and analysis of optical characteristics, i.e., dispersion, confinement loss, and effective area have been studied extensively for optimizing the structure for a certain range of …
Published in Trends in Opto-electro & Optical Communication · Vol. 7, Issue 2, 2017 · pp. 41–50 Read article
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Placebo in Contemporary Medical Era: A Review
Abstract: Patients attribute their health to the medicine. The other side of the picture is that their health is just about what do they expect. Clinical efficacy of medicines needs the optimism from their patients. Placebo was analyzed, its activity in prefrontal cortex assessed, raising dopamine levels. Other Expectations of patients play vital role in bringing them back to healthy life, alongside medicine. This review summarizes the data of scientific findings …
Published in Research and Reviews : A Journal of Medical Science and Technology · Vol. 4, Issue 2, 2015 · pp. 39–47 Read article