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71 articles for “short-circuit current”
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Electrical Characteristics of AlGaN/GaN/AlGaN HEMTs
Abstract: AbstractA maximum drain current of 556 mA is achieved by the simulated structures of double-heterojunction AlGaN/GaN/AlGaN high electron mobility transistors (HEMTs) using the SILVACO-ATLAS software tool in this work. The drain current is observed as higher at shorter gate length. The drain current is found as higher at larger aluminium mole fraction. Also, the drain current is found as higher at larger thickness of AlGaN barrier layer. The drain current …
Published in Journal of Semiconductor Devices and Circuits · Vol. 5, Issue 3, 2018 · pp. 7–17 Read article
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3D Simulation of Multi-Gate Mosfet Analysis for Analog Circuit Design Parameters
Abstract: Chip density and performance improvements of semiconductor devices have been driven by their aggressive scaling. The performance of multi-gate FET for analog applications is explored in this paper. Analog operation of CMOS devices and its parameters are very important for future cutting edge technologies. The multi-gate technology shows excellent scalability and better immunity to short channel effects in MOSFETs. They are being easily assessed for CMOS applications beyond the 45 …
Published in Journal of Semiconductor Devices and Circuits · Vol. 1, Issue 2, 2014 · pp. 1–8 Read article
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Suitability of Various Low Power Strategies for SRAM Design: A Survey
Abstract: In very high performance system on chip, static power dissipation plays a dominant role compared to dynamic component and it increases with technology scaling. Scaling of bulk MOSFET faces more and more challenges at 45 nm technology or below by producing short channel effect (SCE) which leads to increase in leakage current. An obstacle with bulk MOSFET at 45 nm or below gate length includes SCE, subthreshold leakage and gate …
Published in Journal of Semiconductor Devices and Circuits · Vol. 2, Issue 1, 2015 · pp. 6–13 Read article
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Design and Implementation of a Photovoltaic High-intensity-discharge Street Lighting System Using MPPT Algorithms
Abstract: This dissertation presents a grid-tied (PV) high-intensity-discharge (HID) street lighting system. During daytime, the battery is charged by a PV panel. A single-ended primary inductance converter (SEPIC) is studied for maximum power point tracking (MPPT). Accuracy and high efficiency battery charging can be achieved under a wide range of PV panel voltage variation. At night, the solar energy stored in the battery is released to drive the street lights by …
Published in Research & Reviews: A Journal of Embedded System & Applications · Vol. 1, Issue 2, 2013 · pp. 1–8 Read article
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Deep Learning-Based Thermal Prediction Models for Solid-State Electronic Devices
Abstract: The rapid advancement of solid-state electronic devices in high-performance computing, communication systems, automotive electronics, and renewable energy applications has significantly increased concerns related to thermal management and device reliability. Excessive heat generation in semiconductor devices adversely affects operational efficiency, switching performance, lifespan, and overall system stability. Traditional thermal prediction methods often require complex numerical computations and extensive simulation time, making them less suitable for real-time monitoring and adaptive control applications. …
Published in International Journal of Solid State Innovations & Research · Vol. 4, Issue 1, 2026 Read article
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Electrical Characteristics of Nanoelectronic Double-Heterojunction High Electron Mobility Transistors
Abstract: AbstractIn this work, a maximum drain current of 554 mA is achieved by the simulated structures of double-heterojunction HEMTs using the SILVACO-ATLAS software tool. The drain current is found to be higher at shorter gate length and at larger aluminium mole fraction. The drain current is also higher at larger thickness of AlGaN barrier layer and at larger doping concentration of AlGaN barrier layer.In this work, the formation of 2-DEG …
Published in Journal of Semiconductor Devices and Circuits · Vol. 7, Issue 1, 2020 · pp. 18–28 Read article
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Novel Characteristics of GaN based Nanoelectronic Double-Heterojunction HEMTs to Establish a Solid-State-Electronics Laboratory
Abstract: The drain characteristics are investigated with respect to electrical variables (drain voltage, gate voltage) and structural parameters of high electron mobility transistors (HEMTs). Total 10526 individual simulation-outputs are reported in this work. The maximum drain current of 553 mA is achieved by the simulated structures of double-heterojunction HEMTs using the SILVACO-ATLAS software tool. The drain current is higher at shorter gate length. The drain current is higher at larger aluminium …
Published in Journal of Semiconductor Devices and Circuits · Vol. 4, Issue 3, 2017 · pp. 11–20 Read article
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Design and Validation of Polymer-Separated Lithium-Ion Battery Powered Mini-UPS for Networking Applications
Abstract: Due to the growing use of semiconductor-based electronic devices in networking applications, power interruptions can cause data loss, productivity loss, and system disruptions. To eliminate these outages, Mini Uninterruptible Power Supplies are expensive and have single-use batteries with shorter battery lives. These networking wires, cables, and other electrical components are polymer-insulated. Polymers with low dielectric constants have the potential to improve antenna interlayer dielectrics, communication cables, and other hardware for …
Published in Journal of Polymer & Composites · Vol. 13, Issue 1, 2025 · pp. 917–933 Read article
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Evaluation of OTA Amplifier Using EEG Signals
Abstract: AbstractOver the last few years, there has been a tremendous exploration in VLSI industries in response to scaling trends towards deep submicron technology. Demand for low power and efficient amplification are rising in day-to-day life. In the process of scaling the CMOS nanometer demand low supply, which is helped to design digital circuit realization at very low power consumption. But it is not valid for analog circuit realization. The related …
Published in Trends in Opto-electro & Optical Communication · Vol. 10, Issue 2, 2020 · pp. 5–14 Read article
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Comparative Analysis of MOSFET, CNTFET and NWFET for High Performance VLSI Circuit Design: A Review
Abstract: Nanowires are inimitable materials for considering phenomenon in nanoscale regime. Nanowires development exhibits ample of applications by controlling their, structure, composition as well as their electrical properties. This paper review diverse types of nanowires, nanowire field-effect transistor (NWFET) structure and their comparison with novel devices. Firstly, this paper describes different types of nanowires and nanowire heterostructure that shows nanowire heterostructures eliminates various factors that limit the performance of homogeneous nanowire …
Published in Journal of VLSI Design Tools and Technology · Vol. 6, Issue 2, 2016 · pp. 19–32 Read article
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Solar Wireless EV Charging System
Abstract: This project presents a Solar Wireless Electric Vehicle (EV) Charging System that integrates solar energy with inductive wireless power transfer (WPT) to achieve a sustainable and eco-friendly charging approach. The proposed system utilizes a 12V solar panel as the primary renewable energy source, which charges a 3.7V lithium-ion battery through a transistor-based control circuit. This stored solar energy then powers the primary coil, generating an alternating magnetic field that enables …
Published in International Journal of Electronics Automation · Vol. 3, Issue 2, 2025 · pp. 14–20 Read article