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655 articles for “s-band”
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Fabrication of MOF5 -GO nanocomposites by tailoring graphene oxide
Abstract: The present paper focusses on the synthesis of graphene oxide and its nanocomposite with metal organic framework (MOF-5). Graphene oxide (GO) was prepared using modified hummer’s method with different concentrations of oxidizing agent to vary the presence of functional group on the surface of GO. The presence of functional group plays a crucial role in determining the interactions between GO and MOFs. To confirm the presence of different functional groups …
Published in Journal of Polymer & Composites · Vol. 12, Issue 1, 2024 · pp. 101–114 Read article
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Performance Improvement of Nano Field Effect Transistor Based on Zinc Oxide Semiconducting Materials – a Critical Analysis
Abstract: New semiconductor materials and new shapes for contemporary nanostructured semiconductor devices, like nanowires, have been researched as a result of advancements in transistor technology. Because of their unique electrical, photonic, and sensing capabilities, nanowires (NWs) constructed of various semiconductor material systems (gallium arsenide, zinc oxide, etc.) have been the subject of intense research over the past 20 years. Due to its distinctive properties, including high electron mobility, high crystalline quality, …
Published in Journal of Polymer & Composites · Vol. 12, Issue 2, 2024 · pp. 99–107 Read article
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Design a Patch Antenna with Metamaterial for Electromagnetic Interference Sensor
Abstract: This paper proposes a design of a patch antenna by using pentagonal shaped metamaterial for Electromagnetic interference sensor. Pentagonal shaped metamaterial is used to increase bandwidth of patch antenna. Metamaterial possesses properties such as negative permittivity and negative permeability. It reduces return loss of antenna and increases the directivity. Two identical rectangular patch antennas have designed for transmitting and receiving purpose. This proposed antenna has been simulated at 2GHz frequency …
Published in Journal of Power Electronics and Power Systems · Vol. 3, Issue 1, 2013 · pp. 18–21 Read article
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Test Time and Power Optimization of 2D SOCs Using GA and Greedy Algorithm
Abstract: This paper presents a genetic algorithm (GA) and greedy algorithm-based solution to co-optimize test scheduling under power constraint for core-based system-on-chips (SOCs). The core testing solutions are represented as set of wrapper configurations represented in rectangular bins of width equal to the test access mechanism (TAM) bandwidth and height equal to the corresponding test time. A best fit algorithm is used for the wrapper design. Experimental results are obtained for …
Published in Journal of Power Electronics and Power Systems · Vol. 5, Issue 2, 2015 · pp. 63–67 Read article
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Adaptive-Hysteresis Current Controller Based Shunt Active Power Line Conditioners for Power Quality Improvements
Abstract: This paper presents three-phase shunt active power line conditioners (APLC) for harmonics and reactive powercompensation due to non-linear loads in the distribution network. The compensation process proposed is asinusoidal extraction control method, which consists of positive-sequence voltage detector for regulating thesupply voltage and instantaneous reactive power (p-q) theory for fundamental extraction from the distorted linecurrent. The shunt active filter voltage source inverter’s switching pulses are generated through an adaptivehysteresiscurrent controller …
Published in Journal of Power Electronics and Power Systems · Vol. 1, Issue 1-2-3, 2011 · pp. 1–13 Read article
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Study and Analyze the Importance of Leadership in Modern Business
Abstract: The beginning point for this chapter was to bring together the investigation regions of organizationalstandards, innovation and alter, and information operation. The center was on innovation from the pointof view of organizational ponders and the method of information sharing in affiliations. It too incorporatesthe conception that specific information is a critical source of organizational information and investigatesthe interface between specific information utilized and organizational innovation forms. In spite of the …
Published in Journal of Production Research & Management · Vol. 12, Issue 2, 2022 · pp. 8–15 Read article
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Novel Characteristics of GaN based Nanoelectronic Double-Heterojunction HEMTs to Establish a Solid-State-Electronics Laboratory
Abstract: The drain characteristics are investigated with respect to electrical variables (drain voltage, gate voltage) and structural parameters of high electron mobility transistors (HEMTs). Total 10526 individual simulation-outputs are reported in this work. The maximum drain current of 553 mA is achieved by the simulated structures of double-heterojunction HEMTs using the SILVACO-ATLAS software tool. The drain current is higher at shorter gate length. The drain current is higher at larger aluminium …
Published in Journal of Semiconductor Devices and Circuits · Vol. 4, Issue 3, 2017 · pp. 11–20 Read article
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GaN-based Double Gate MOSFET (DG-MOSFET)
Abstract: AbstractGaN is auspicious for high-power, high-temperature devices because of its large bandgap, and high saturation velocity compared with Si. Gallium nitride (GaN) based devices are expected to play an important role to develop the next-generation devices. The performance of GaN-based double gate (DG) MOSFETs have been explored with gate length (Lg) 10.6 nm. The ON-current (ION) and OFF-current (IOFF) are found to be 8.11´10–3 and 6.38605´10–9A/µm respectively, respectively with an …
Published in Journal of Semiconductor Devices and Circuits · Vol. 5, Issue 3, 2018 · pp. 24–28 Read article
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Recent Development in Ga2O3 MOSFETs for High Power RF Applications
Abstract: Abstract: This paper attempts to investigate the property of recently reported gallium oxide as a high power RF device by studying its related high power RF characteristics, and suggest a path to develop metal-oxide-semiconductor field effect transistor (MOSFET). Keywords: MOSFETs, Wide Band Gap Semiconductors, Gallium Oxide and RF ICsCite this ArticleNarendra Yadava, R.K Chauhan. Recent Development in Ga2O3 MOSFETs for High Power RF Applications. Journal of Semiconductor Devices and Circuits …
Published in Journal of Semiconductor Devices and Circuits · Vol. 6, Issue 1, 2019 · pp. 21–25 Read article
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Electrical Characteristics of Nanoelectronic Double-Heterojunction High Electron Mobility Transistors
Abstract: AbstractIn this work, a maximum drain current of 554 mA is achieved by the simulated structures of double-heterojunction HEMTs using the SILVACO-ATLAS software tool. The drain current is found to be higher at shorter gate length and at larger aluminium mole fraction. The drain current is also higher at larger thickness of AlGaN barrier layer and at larger doping concentration of AlGaN barrier layer.In this work, the formation of 2-DEG …
Published in Journal of Semiconductor Devices and Circuits · Vol. 7, Issue 1, 2020 · pp. 18–28 Read article
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Complementary Metal Oxide Semiconductor Readout Integrated Circuit for Imaging Applications
Abstract: In this paper presents a novel continuous-time simultaneous-readout scheme for active imaging systems based on orthogonal modulation of photo detector signals. The superimposed-continuous-time approach presented here differs from the conventional scheduled-discrete-time scheme in that the photo detector signals are summed in a common bus concurrently and then converted to voltage levels for digitization. We illustrate that our proposed architecture may be profitable. Predominantly, in solicitations, the bandwidth necessities for a …
Published in Journal of Semiconductor Devices and Circuits · Vol. 2, Issue 2, 2015 · pp. 5–8 Read article
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Development of chemical photo-electronics
Abstract: This article has described to access changed perform of zinc sulphide (ZnS) after doping manganese. ZnS has been typified II-VI compound devised for optoelectronic semiconductor material. Mn-doped ZnS semiconductor nanocrystal has been explored in 1994. Scope has been synergistic to usual doped semiconductor nanoparticle, given by, CdS: Mn; CdS: Eu; ZnO: Co, Ni; ZnSe: Mn; ZnS: Cu; ZnS: Pb, Cu; henceforth, scope adjunct has been in lane pursue of ZnS: …
Published in Journal of Semiconductor Devices and Circuits · Vol. 8, Issue 3, 2021 · pp. 16–22 Read article
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Advances and Challenges in the Development of High-performance Silicon Carbide (SiC) Power Devices
Abstract: Due to its distinct features, silicon carbide (SiC), a wide-bandgap semiconductor material, has attracted a lot of attention lately. SiC has superior electrical characteristics compared to silicon, making it an attractive material for high-performance power electronic devices. SiC-based devices can operate at higher temperatures, higher voltages, and higher switching frequencies, which can result in increased power density and efficiency. Recent advances in SiC device technology have led to the development …
Published in Journal of Semiconductor Devices and Circuits · Vol. 9, Issue 3, 2022 · pp. 15–20 Read article
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Photoluminescence of Borate Based Phosphors
Abstract: With the increasing advancement in the field of Photoluminescence and its utilization in borate-based phosphors due to its wide diversity and advanced features compared to other types of luminescence. The optical range of the photoluminescence and furthermore the reliance of its force on the illumination power and gadget temperature can convey significant data for gadget portrayal. The release of light caused by another source of light shining on a substance …
Published in Journal of Semiconductor Devices and Circuits · Vol. 10, Issue 2, 2024 · pp. 26–35 Read article
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Performance of Offshore Steel Jacket Platforms under Near-source Ground Motion Type Pulses
Abstract: Behaviour of jacket type offshore structures under ordinary ground excitations has already been addressed by a number of researchers. However, their performance under near-source ground excitations has not been particularly addressed in the literature. Records from recent earthquakes, such as the Kobe Japan (1995) and Chi-Chi Taiwan (1999), have revealed that the dynamic excitations in near-source are dominated by a large, narrow band and long period pulse caused by rupture …
Published in Journal of Structural Engineering and Management · Vol. 1, Issue 2, 2014 · pp. 17–31 Read article
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Synthesis and Characterization of In2S3 Nanoflake Thin Film for Photosensor Applications
Abstract: Indium sulphide (In2S3) thin films in the form of nanoflakes are synthesized by using chemical vapour deposition method on glass substrate with the intension to test its photosensor applications. These as deposited nanoflake thin films are characterized for physicochemical properties using X-ray diffraction (XRD) pattern, energy dispersive X-ray (EDAX) analysis,scanning electron microscopy (SEM) while optoelectronic properties were studied using optical and electrical characteristics obtained through UV-Vis transmission spectroscopy and I-V …
Published in Journal of Thin Films, Coating Science Technology & Application · Vol. 4, Issue 3, 2017 · pp. 21–26 Read article
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Preparation and Characterization of Aluminium Doped ZnO Thin Films by Spin Coating Technique
Abstract: In this work, the preparation of Al-doped ZnO (AZO) thin films by the sol-gel spin-coating method is reported. The structural properties and surface morphologies of film prepared at RT were characterized by X-ray diffraction (XRD) and field emission scanning electron microscope (FE-SEM). The XRD and SEM results disclosed that the crystallization quality and grain size of as-prepared films were highly influenced by Al doping. Laser Raman Spectrometer results indicated that …
Published in Journal of Thin Films, Coating Science Technology & Application · Vol. 7, Issue 2, 2020 · pp. 16–22 Read article
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Study of Nano Germanium and Composited Forms
Abstract: This article has reviewed refinement synergism to same as earlier bulk semi-conduction. Colloidal 5 nm suspension from photolysis and pyrolysis for aerogel of II-VI quantum dots has subsidized extinction contour of semiconductor nano-crystal. Thereby transitional has accused between 0.6 to 5 eV to access from size-dependent optical and electrical effect instead of precipitation technique. Structure-oriented electronic and optical property has relevance to nano-semiconductor preparation method synergistic to earlier bulk. Nano-crystals …
Published in Journal of Thin Films, Coating Science Technology & Application · Vol. 8, Issue 2, 2021 · pp. 8–15 Read article
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Radio Frequency Energy Harvesting Using Microstrip Antenna
Abstract: In this paper, an antenna for energy harvesting in radio frequency range has been studied. The presented microstrip antenna gives good return loss obtained for wide range of applications in RF region ranges from 2.33 to 6.68 GHz. The anticipated antenna is best suitable to receive the RF energy from the environment that can be used to charge the electronic devices. The simulations of the proposed antenna were carried using …
Published in Journal of Telecommunication, Switching Systems and Networks · Vol. 4, Issue 3, 2017 · pp. 12–15 Read article
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Designing of Circular Patch Antenna Modified by Metamaterial Structure
Abstract: AbstractThis finding is an outcome of the research carried out on the patch with the introduction of metamaterial. A “Dual Split Hexagonal Ring” metamaterial structure is implemented in the ground plane to modify the parameters of patch antenna i.e., circular. This recommended antenna operates on 2.42 GHz. Circular patch alone was not efficient and cannot be applicable for any applications, therefore a dual ring split metamaterial structure was implemented to …
Published in Journal of Telecommunication, Switching Systems and Networks · Vol. 5, Issue 3, 2018 · pp. 1–5 Read article