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38 articles for “Field Effect Transistor”
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Computational Modeling of Polymer Semiconductors for Electronic Applications
Abstract: Polymer semiconductors have become important materials in modern electronic applications because they combine semiconducting behavior with mechanical flexibility, low-cost processing, and tunable molecular structure. Their growing use in organic field-effect transistors, organic photovoltaics, organic light-emitting diodes, and flexible sensing devices has increased the need for accurate computational approaches that can predict material properties and device performance before experimental fabrication. This paper reviews the major computational modeling techniques used for polymer …
Published in Journal of Polymer & Composites · Vol. 14, Issue 3, 2026 · pp. 132–146 Read article
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A Comprehensive Review on FinFet Technology : Advantages, Challenges and Applications
Abstract: New devices and enhanced layers have been developed, specially the FinFET (Fin Field-Effect Transistor) which is considerably superior to the planar transistor because of its ability to meet the new demands of systems for high-performance, low-power, and dimensions reduction. Some of the recent developments in FinFETs mentioned in this review include a reduction of leakage currents by 50% and an enhancement of the speed by 30%; thus, FinFETs remain fundamental …
Published in Journal of Semiconductor Devices and Circuits Read article
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Design and Optimization of Nano scale Double Gate SOI-MOSFET for Analog Applications Using SILVACO TCAD
Abstract: In this paper the structure effect on electrical characteristics of 60-nm double-gate Silicon-on-Insulator Metal-Oxide-Semiconductor Field Effect Transistor (DG-SOI-MOSFETs) is explored. These structures enable more aggressive device scaling in nano scale region because of their ability to control short channel effects. Established a scaling theory which gives guidance for the device optimization (Silicon film thickness Tsi (20nm); gate oxide thickness Tox (3nm); buried oxide thickness Tbox (200nm) and gate length LG …
Published in Journal of Electronic Design Technology · Vol. 1, Issue 1-3, 2011 · pp. 7–17 Read article
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Graphene for Next Generation Green Electronics-A Sustainable Future
Abstract: The amount of e-waste or electronic waste is increasing worldwide due to the rapid development of the electronics industry and the profound usage of electronic products although it has enormous detrimental effects on the environment and humans. It has become an evolving problem due to a lack of knowledge and infrastructure for e-waste disposal and recovery. Researchers around the world are in search of environment-friendly, sustainable ‘green electronic’ material which …
Published in Journal of Energy, Environment & Carbon Credits · Vol. 12, Issue 3, 2022 · pp. 35–41 Read article
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Optimizing the Ratio of Number of Tubes in PCNTFET to NCNTFET for Digital Circuits
Abstract: AbstractCarbon nanotube Field Effect Transistors (CNTFET) offer various benefits as compared to other FETs. Many circuits can be constructed using PCNTFETs (P-type CNTFET) and NCNTFETs (N-type CNTFET) similar to the PMOS and NMOS of the CMOS technology. The CNTFETs employ carbon nanotubes in the channel of the device to provide a path for the ballistic conduction of electrons. The different ratios of number of tubes in channel of the PCNTFET …
Published in Journal of Microelectronics and Solid State Devices · Vol. 5, Issue 1, 2018 · pp. 34–40 Read article
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Design and Performance Analysis of Full Adder Cell using FinFET Technique at 32nm Technology
Abstract: AbstractIn this paper, discussed is the comparative analysis of complementary MOS (CMOS) and dual gate-FinFET (fin shaped field effect transistor) based full adder cell design. To reduce the average power, average current and maximum current of 1-bit full adder circuit a new high DG-FinFET technique is presented. Use of double-gate FinFET technology provides low leakage and high performance operation. For MOSFET transistor model, a predictive technology model (PTM) BSIM4 and …
Published in Journal of Microelectronics and Solid State Devices · Vol. 4, Issue 3, 2017 · pp. 1–8 Read article
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Reduction of Short Channel Effects with the Variation of Poly Doping and Source/Drain Doping
Abstract: In this paper, the concentration of poly-silicon doping and source/drain doping has been varied to obtain the approximation the OFF state leakage current for N channel MOSFET. A lightly doped NMOS has been designed using 45 nm technology in ATHENA and simulated in ATLAS of SILVACO TCAD tool. After simulation results, it has been observed that as the poly-silicon doping and source drain doping concentrations are decreased, there is a …
Published in Journal of Semiconductor Devices and Circuits · Vol. 4, Issue 3, 2017 · pp. 35–42 Read article
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MOS Capacitor: A Processing Tool
Abstract: In this modern world of technology, life without electronics is unimaginable. We are now living in the age of electronics. It is hard to find an electrical item in your home that does not have electronics part in it. The electronic devices give better efficiency and reliability in terms of power loss, speed and cost; the fundamental component of each Integrated Circuit (IC) chip, namely the MOSFET (metal oxide semiconductor …
Published in Journal of Semiconductor Devices and Circuits · Vol. 5, Issue 1, 2018 · pp. 27–32 Read article
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Design of a Multipurpose Ternary Arithmetic Circuit Using CNTFET
Abstract: AbstractIn this paper, a multipurpose ternary arithmetic circuit is presented for ternary processors based on carbon nanotube field effect transistors (CNTFETs). Both addition and subtraction can be performed using same circuit’s configuration, which is the special feature of the proposed circuit. The combination of pseudo and complimentary logic structure are employed to blend the binary and ternary logic techniques. The propagation delay and power delay product are 139.5 pico second …
Published in Journal of Semiconductor Devices and Circuits · Vol. 3, Issue 1, 2016 · pp. 13–24 Read article
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Recent Development in Ga2O3 MOSFETs for High Power RF Applications
Abstract: Abstract: This paper attempts to investigate the property of recently reported gallium oxide as a high power RF device by studying its related high power RF characteristics, and suggest a path to develop metal-oxide-semiconductor field effect transistor (MOSFET). Keywords: MOSFETs, Wide Band Gap Semiconductors, Gallium Oxide and RF ICsCite this ArticleNarendra Yadava, R.K Chauhan. Recent Development in Ga2O3 MOSFETs for High Power RF Applications. Journal of Semiconductor Devices and Circuits …
Published in Journal of Semiconductor Devices and Circuits · Vol. 6, Issue 1, 2019 · pp. 21–25 Read article
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Performance Analysis of Fully Flexible Organic Humidity Sensor with Top-Contact and Bottom-Contact OTFTs
Abstract: Abstract: Organic field-effect transistor (OFET) based humidity sensors are extensively used nowadays due to their low cost, mechanically flexible and compatibility with lower temperature fabrication techniques that support the plastic substrate based device and circuit applications. This paper investigates the humidity dependence of performance of organic humidity sensor with Top-Contact and Bottom-Contact OTFTs. Subsequently, impact of channel length on sensor performance is analyzed. The humidity sensitivity of organic sensor drain …
Published in Journal of Semiconductor Devices and Circuits · Vol. 6, Issue 1, 2019 · pp. 26–34 Read article
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Design and Simulation of Ternary Gates Using Fin-FET
Abstract: In recent years, digital communication system has becomes more popular. But the on-chip interconnections have become a major problem as more and more modules are packed into a chip by reducing the gate size. As the gate size is reduced further the complexities in the circuit increases. Binary logic circuit dissipates a lot of energy, increase processing time, and causes coupling effect. In the Ternary logic system, there are three …
Published in Journal of Semiconductor Devices and Circuits · Vol. 2, Issue 3, 2015 · pp. 4–18 Read article
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Comparative Study of Symmetric and Asymmetric Oxide Double Gate Junction less FET
Abstract: We carry out the performance of symmetric oxide (HfO2+HfO2) and asymmetric oxide (SiO2+HfO2) n-type junction less field-effect transistor (JLFET) based on two- dimensional Poisson equation. This study is accomplished by simulating a symmetric and asymmetric double gate JLFET on Sentaurus, Technology Computer Aided Design (TCAD) simulator for Silicon (Si) material at room temperature and varying temperature in between 300-360 k.Based on device simulation we find that the asymmetric oxide shows …
Published in Journal of Semiconductor Devices and Circuits · Vol. 8, Issue 2, 2021 · pp. 14–20 Read article
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Performance Analysis of 3T DRAM Using FinFET Based with Leakage Reduction Techniques at 45 nm Technology
Abstract: The proposed area of research is to reduce the power consumption, leakage voltage, leakage current and leakage power of DRAM while maintaining the competitive performance. The Fin FET approach is used in DRAM for high performance. Fin type field effect transistors (Fin FET) are capable substitutes for bulk CMOS at the nano-scale. Fin FET are double gate device. A Fin FET uses an intrinsic body. It greatly suppresses the device-performance …
Published in Journal of VLSI Design Tools and Technology · Vol. 7, Issue 3, 2017 · pp. 28–34 Read article
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Simulation Study of Tapered Shape FinFET
Abstract: During recent years, nonplaner tri-gate (TG) field-effect transistors (FETs) such as FinFETs have been extensively studied for the enhancement of electrostatic control and suppression of short-channel effects (SCEs) in the sub50 nm regime. As the device scaled, it is observed that the shape of the rectangular FinFET becomes tapered shape. This paper presents the design and analysis of a tapered-shaped FinFET. By varying the sidewall inclination angle of a rectangular …
Published in Journal of VLSI Design Tools and Technology · Vol. 6, Issue 1, 2016 · pp. 21–31 Read article
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Comparative Analysis of MOSFET, CNTFET and NWFET for High Performance VLSI Circuit Design: A Review
Abstract: Nanowires are inimitable materials for considering phenomenon in nanoscale regime. Nanowires development exhibits ample of applications by controlling their, structure, composition as well as their electrical properties. This paper review diverse types of nanowires, nanowire field-effect transistor (NWFET) structure and their comparison with novel devices. Firstly, this paper describes different types of nanowires and nanowire heterostructure that shows nanowire heterostructures eliminates various factors that limit the performance of homogeneous nanowire …
Published in Journal of VLSI Design Tools and Technology · Vol. 6, Issue 2, 2016 · pp. 19–32 Read article
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Performance Analysis of 3T DRAM Using FinFET Based with Leakage Reduction Techniques at 45 nm Technology
Abstract: The proposed area of research is to reduce the power consumption, leakage voltage, leakage current and leakage power of DRAM while maintaining the competitive performance. The Fin FET approach is used in DRAM for high performance. Fin type field effect transistors (Fin FET) are capable substitutes for bulk CMOS at the nano-scale. Fin FET are double gate device. A Fin FET uses an intrinsic body. It greatly suppresses the device-performance …
Published in Journal of VLSI Design Tools and Technology · Vol. 7, Issue 2, 2017 · pp. 28–34 Read article
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An overview of Nanocrystalline Hydrogenated Silicon Thin film Transistor
Abstract: This article elaborates and comprehends an overview on nc-Si:H TFT's, detailing and highlighting the topics like fabrication methodology, properties/stability, modelling, characterization techniques, challenges and futuristic scope/applications.With the growing demands in commercialization of Solar Cells (low-cost photo voltaic devices), Large Area Displays (like OLED’s), Thin film electronics (FPD applications), pixel switches, wearable/flexible electronics and so on, has prompted researchers to develop nc-Si:H TFT's (an alternative solution) which can out perform the …
Published in Nano Trends – A Journal of Nano Technology & Its Applications · Vol. 27, Issue 2, 2025 · pp. 1–23 Read article