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41 articles for “ATL”
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Gallium Nitride based HEMTs in Nano-Scale Regime
Abstract: AbstractIn this work, a maximum drain current of 557 mA is achieved by the simulated structures of double-heterojunction HEMTs using the SILVACO-ATLAS software tool. The drain current is found to be higher at shorter gate length. The drain current is observed as higher at larger aluminium mole fraction. The drain current is also higher at larger thickness of AlGaN barrier layer. Again, the drain current is higher at larger doping …
Published in Journal of Microelectronics and Solid State Devices · Vol. 5, Issue 3, 2018 · pp. 11–21 Read article
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A Two-Dimensional (2D) Analytical Model for Channel Potential and Threshold Voltage of Short Channel Triple Material Gate-Double Halo (TMG-DH) DG MOSFET
Abstract: In the present paper, an analytical model for the channel potential of short channel Triple Material Gate-Double Halo (TMG-DH) DG MOSFET has been presented using parabolic approximation method. Further, the threshold voltage of the device has been calculated using minimum mid channel potential and the result obtained has been compared with the threshold voltage of Triple Material double gate (TMDG) MOSFET in order to show the improvement in the threshold …
Published in Journal of Microelectronics and Solid State Devices · Vol. 6, Issue 2, 2019 · pp. 13–25 Read article
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Novel Characteristics of GaN based Nanoelectronic Double-Heterojunction HEMTs to Establish a Solid-State-Electronics Laboratory
Abstract: The drain characteristics are investigated with respect to electrical variables (drain voltage, gate voltage) and structural parameters of high electron mobility transistors (HEMTs). Total 10526 individual simulation-outputs are reported in this work. The maximum drain current of 553 mA is achieved by the simulated structures of double-heterojunction HEMTs using the SILVACO-ATLAS software tool. The drain current is higher at shorter gate length. The drain current is higher at larger aluminium …
Published in Journal of Semiconductor Devices and Circuits · Vol. 4, Issue 3, 2017 · pp. 11–20 Read article
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Reduction of Short Channel Effects with the Variation of Poly Doping and Source/Drain Doping
Abstract: In this paper, the concentration of poly-silicon doping and source/drain doping has been varied to obtain the approximation the OFF state leakage current for N channel MOSFET. A lightly doped NMOS has been designed using 45 nm technology in ATHENA and simulated in ATLAS of SILVACO TCAD tool. After simulation results, it has been observed that as the poly-silicon doping and source drain doping concentrations are decreased, there is a …
Published in Journal of Semiconductor Devices and Circuits · Vol. 4, Issue 3, 2017 · pp. 35–42 Read article
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Numerical Simulation and Modeling of Self Heating in SOI MOSFET
Abstract: Abstract As the device size has been reduced the temperature increment of high-performance very large scale integrations (VLSIs) becomes a major issue. The self-heating effect and non-uniform power distribution in VLSIs, affect the performance of device. In this paper numerical simulation of self heating in SOI MOSFET has been performed. Poisson's equation, continuity equation, energy balance equation and heat flow equations have been solved self consistently using finite element method …
Published in Journal of Semiconductor Devices and Circuits · Vol. 5, Issue 3, 2018 · pp. 18–23 Read article
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Electrical Characteristics of AlGaN/GaN/AlGaN HEMTs
Abstract: AbstractA maximum drain current of 556 mA is achieved by the simulated structures of double-heterojunction AlGaN/GaN/AlGaN high electron mobility transistors (HEMTs) using the SILVACO-ATLAS software tool in this work. The drain current is observed as higher at shorter gate length. The drain current is found as higher at larger aluminium mole fraction. Also, the drain current is found as higher at larger thickness of AlGaN barrier layer. The drain current …
Published in Journal of Semiconductor Devices and Circuits · Vol. 5, Issue 3, 2018 · pp. 7–17 Read article
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Simulation Studies on the Drain Characteristics of Microelectronic AlGaN/GaN HEMTs Corresponding to the 30 nm of AlGaN Nano-Layer
Abstract: AbstractIn this work, the simulation studies are performed on high electron mobility transistor (HEMT) structures using the SILVACO-ATLAS software tool. The drain characteristics of HEMT structures is investigated with respect to the Aluminium mole fraction, drain voltage, gate voltage, and gate length at 30 nm thickness of AlGaN nano-layer. The simulation studies on the effect of gate length to control the drain characteristics are a novelty of this work. The …
Published in Journal of Semiconductor Devices and Circuits · Vol. 4, Issue 1, 2017 · pp. 8–16 Read article
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Report on the Novel Electrical Characteristics of Microelectronic High Electron Mobility Transistors to Establish a Low-Cost Microelectronics Laboratory in the National Institute of Technology Arunachal Pradesh
Abstract: AbstractIn this work, total 22584 individual simulation-outputs are reported according to the performed simulation-studies on the microelectronic AlGaN/GaN high electron mobility transistors (HEMTs). This series of simulation work has been performed using the SILVACO-ATLAS software tool on the basis of already established theories related to the semiconductor-physics of HEMTs. In this work, the drain characteristics are investigated with respect to the aluminium mole fraction, drain voltage, gate voltage, gate length …
Published in Journal of Semiconductor Devices and Circuits · Vol. 4, Issue 2, 2017 · pp. 6–28 Read article
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Impact of Source/Drain Engineering on Performance of Single Gate and Dual Gate Junctionless MOSFET
Abstract: Abstract: This letter is the study on impact of source/drain engineering on Single Gate (SG) and Dual Gate (DG) Junctionless MOSFET. Both the proposed MOSFET have Gate Stacking and highly doped source/drain region, so name suggested is Highly Doped Source Drain Gate Stack Junctionless (HDSD-GSJL) MOSFET. Here we investigate the effect of highly doped source/drain, gate stacking and double gate on junctionless MOSFET. The investigation is performed in relations of …
Published in Journal of Semiconductor Devices and Circuits · Vol. 6, Issue 1, 2019 · pp. 10–14 Read article
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Performance Analysis of Fully Flexible Organic Humidity Sensor with Top-Contact and Bottom-Contact OTFTs
Abstract: Abstract: Organic field-effect transistor (OFET) based humidity sensors are extensively used nowadays due to their low cost, mechanically flexible and compatibility with lower temperature fabrication techniques that support the plastic substrate based device and circuit applications. This paper investigates the humidity dependence of performance of organic humidity sensor with Top-Contact and Bottom-Contact OTFTs. Subsequently, impact of channel length on sensor performance is analyzed. The humidity sensitivity of organic sensor drain …
Published in Journal of Semiconductor Devices and Circuits · Vol. 6, Issue 1, 2019 · pp. 26–34 Read article
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Electro Thermal Simulation of AlGaN/GaN HEMT
Abstract: This paper presents electro thermal simulation of AlGaN/GaN High Electron Mobility Transistor (HEMT) without AlN layer nucleation layer and AlGaN/GaN HEMT by introducing AlN nucleation layer. With the help of Silvaco ATLAS lattice temperature of the devices figured out. It is observed that self heating in AlGaN/GaN HEMT without AlN nucleation layer is higher than the self heating in AlGaN/GaN HEMT with AlN nucleation layer. Simulation of lattice temperature inside …
Published in Journal of Semiconductor Devices and Circuits · Vol. 6, Issue 2, 2019 · pp. 18–27 Read article
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Electrical Characteristics of Nanoelectronic Double-Heterojunction High Electron Mobility Transistors
Abstract: AbstractIn this work, a maximum drain current of 554 mA is achieved by the simulated structures of double-heterojunction HEMTs using the SILVACO-ATLAS software tool. The drain current is found to be higher at shorter gate length and at larger aluminium mole fraction. The drain current is also higher at larger thickness of AlGaN barrier layer and at larger doping concentration of AlGaN barrier layer.In this work, the formation of 2-DEG …
Published in Journal of Semiconductor Devices and Circuits · Vol. 7, Issue 1, 2020 · pp. 18–28 Read article
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Experimental Investigations to Improve the Electrical Characteristics of Nitride-Based Nanoelectronic High Electron Mobility Transistors
Abstract: In this work, the DC and RF performances of conventional nanoelectronic high electron mobility transistor (HEMT) are compared with those of two individually modified HEMT structures in a nano-scale regime. All simulation results are produced by the SILVACO- ATLAS physical simulator according to the performed designs of HEMT structures. In each of these HEMT structures, the formation of quantum well is demonstrated at unbiased condition. In the DC analysis of …
Published in Journal of Semiconductor Devices and Circuits · Vol. 8, Issue 1, 2021 · pp. 14–30 Read article
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Design and Performance of Semiconductor-Biosensor
Abstract: In this work, a high electron mobility transistor (HEMT) based biosensor is designed to detect the virus-protein. In this work, all the simulation-studies are carried out in the SILVACO-ATLAS physical simulator using the following models: Shockley Read Hall (SRH), band gap narrowing, Auger recombination, and Fermi Dirac statistics. Newton trap numerical solver is used in the device simulation. Conduction band engineering of the biosensor is studied. DC and RF properties …
Published in Journal of Semiconductor Devices and Circuits · Vol. 8, Issue 2, 2021 · pp. 1–13 Read article
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DC and RF Analysis on Specific Quantum-Well Heterostructures
Abstract: Polarization-graded AlGaN back-barrier nano-layer is introduced in high electron mobility transistor (HEMT) structure to have an improved drain current characteristics and better radio-frequency performance, using two-dimensional drift-diffusion simulation by SILVACO-ATLAS physical simulator. In this work, the AlGaN/AlN/GaN/AlGaN/GaN double heterojunction HEMT structure is optimised with graded back barrier layer to study the DC and RF performances. Investigation of this structure with graded back barrier layer is the novelty of this work. …
Published in Journal of Semiconductor Devices and Circuits · Vol. 9, Issue 1, 2022 · pp. 1–13 Read article
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Investigation and Dependency Analysis of Silicon Film Thickness on Performance of Surrounding Gate MOSFET at Subthreshold Regime
Abstract: The characteristics of cylindrical gate all around MOSFET have been studied in terms of the dependence of various device performance metrics on silicon film thickness (Tsi). In this work, the effect of silicon film thickness on numerous performance metrics like threshold voltage (Vt), On current (Ion), subthreshold leakage current (Ioff), On-Off current ratio (Ion/Ioff) and DIBL of cylindrical GAA are comprehensively evaluated and analysed. It has been observed that cylindrical …
Published in Journal of VLSI Design Tools and Technology · Vol. 8, Issue 2, 2018 · pp. 49–54 Read article
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Simple Gain Model of Group III-V Semiconductor-based Laser Diode
Abstract: In these days, a layer of low bandgap material is sandwiched between two high bandgap layers.Most commonly-used pair of materials is gallium arsenide (GaAs) with aluminium galliumarsenide (AlGaAs) and Indium Phosphide (InP) with Indium gallium arsenide phosphide(InGaAsP) laser. A heterostructure is the junctions between different bandgap materials. Here,two such junctions are present, hence it is called the name "double heterostructure laser" orDH laser. The kind of laser diode may be …
Published in Recent Trends in Electronics Communication Systems · Vol. 7, Issue 3, 2020 · pp. 9–27 Read article
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COVID and Computational Biology: A Review
Abstract: The (COVID-19) Corona Virus 19 Disease is infecting millions of people and made several billions to stay at home under Lockdown. The disease has caused global pandemic. The nano-sized virus is threatening the entire human race. It is posing mere burden to the Public, Government, and the health care sectors. The COVID-19 virus is a novel virus, after deep sequencing from samples done by several researchers, and scientist form the …
Published in Research and Reviews : Journal of Computational Biology · Vol. 10, Issue 1, 2021 Read article
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Effects of Vocal Loading task on Teachers’ voice: Measures of Acoustical, Aerodynamic and Self-Perceptual Vocal Parameters
Abstract: Teachers are susceptible to develop dysphonia due to heavy vocal loading. The study aimed to evaluate teachers’ voice before and after vocal loading task, at the beginning and end of the day. Subjects included 70 female (mean age:34.61 years) and 30 male teachers (mean age:36.80 years) aged 25-40 years, involved in atleast four hours of teaching per day. Based on years of teaching experience, they were categorized into four groups. …
Published in Research and Reviews: A Journal of Health Professions · Vol. 12, Issue 3, 2022 · pp. 22–28 Read article
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Sociodemographic Determinants of Tobacco Use among Patients Admitted in a Tertiary Care Hospital
Abstract: Tobacco use is the most important contributor to morbidity and premature death among modifiable lifestyle factors. More than five million of those deaths are the result of direct tobacco use while more than 600 000 are the result of nonsmokers being exposed to second-hand smoke and the annual death toll could rise to more than eight million by 2030. A cross-sectional survey was conducted where males and females of 18–65 …
Published in Research and Reviews : Journal of Surgery · Vol. 5, Issue 3, 2016 · pp. 29–34 Read article