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210 articles for “(DOP)”
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Influence of SiO2 Nanoparticles on the Structural, Morphological, and Optical Properties of CsPbBr3 Quantum Dots
Abstract: This work mainly investigates the structural and optical property differences between CsPbBr3/SiO2 quantum dots (QDs) and CsPbBr3 QDs thin films deposited on fluorine-doped tin oxide (FTO) glass. X-ray diffraction of CsPbBr3/SiO2 QD thin film showed a polycrystalline cubic nanostructure with (200) as a dominant phase and did not show any peak of SiO2. Scanning and transmission electron microscopy images show that it is very small spherical or semi-spherical particles with …
Published in Journal of Polymer & Composites · Vol. 11, Issue 2, 2023 · pp. 62–69 Read article
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Investigating the Influence of Shock Waves on the Dielectric Characteristics of ZMTC Crystals
Abstract: Zinc mercury thiocyanate (ZMTC) is an organometallicnonlinearly optical (NLO) single crystal that has been grown in an aqueous solution using the SR technique. Novel, non-destructive method is suggested and shown to enhance the electrical properties of crystals through the use of shock waves. A tabletop shock tube, operating at a Mach number of 1.7, generates shock waves that are subsequently loaded into a zinc mercury thiocyanate (ZMTC) crystal. This process, …
Published in Journal of Polymer & Composites · Vol. 12, Issue 2, 2024 · pp. 84–98 Read article
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Study of Scaling of MOSFET on Various Electrical Characteristics using Silvaco TCAD Tool
Abstract: MOSFETs are the driving work horse of semiconductor industry. Over the years, the MOSFET device density has been continuously increasing owing to the reduction in channel length of MOSFET device. This article discusses the effect of scaling i.e. channel length and gate oxide thickness on various parameters like threshold voltage, transconductance, maximum drain current and subthreshold slope. It is important to consider that with scaling of the channel length; the …
Published in Journal of Semiconductor Devices and Circuits · Vol. 5, Issue 1, 2018 · pp. 11–19 Read article
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Emerging Trends in Applications of Semiconductor Alloys in Wireless Communications
Abstract: AbstractArsenide semiconductor alloys provide a natural means of tuning the magnitude of the forbidden gap and other material parameters so as to optimise and widen the application of semiconductor devices. With the advent of small-structure systems, for instance quantum wells and superlattices, the special effects of alloy composition, size, device geometry, doping and controlled lattice strain can be collective to accomplish maximum tunability. In this article, the concepts and ideas …
Published in Journal of Semiconductor Devices and Circuits · Vol. 3, Issue 1, 2016 · pp. 31–41 Read article
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SPICE Modeling of LDMOSFET Transistor
Abstract: AbstractHigh voltage integrated circuits, these days are the most viable alternatives to discrete circuits for various applications. The popular amongst them is the lateral double diffused MOS transistor (LDMOS). It is based on the lightly doped drain (LDD) concept. The constraint that occurred in modeling LDMOS is to minimize the on-resistance along with maintaining a high breakdown voltage. To achieve the objective, the help of RESURF (Reduced Surface Field) concept …
Published in Journal of Semiconductor Devices and Circuits · Vol. 3, Issue 1, 2016 · pp. 42–57 Read article
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Fundamental Concepts and Applications of High Electron Mobility Transistors (HEMTs): A Qualitative Review
Abstract: A brief qualitative review of the modulation doped field effect transistors (MODFETs), also known as High Electron Mobility Transistors (HEMTs) is provided here. The prominent features of this review include detailed discussion on the role of various layers and comparison between various HEMTs structures. Emphasis has been given to offer a complete overview of the various aspects of HEMT devices, from fabrication to applications, in a synergetic manner.
Published in Journal of Semiconductor Devices and Circuits · Vol. 2, Issue 1, 2015 · pp. 31–47 Read article
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Simulation Study of Process Variations in Double Gate Junctionless Field-Effect Transistors
Abstract: This work discusses the process variations in symmetrical double-gate (DG) junctionless (JL) field-effect transistors (FETs) by device simulation. Output I-V characteristics along with subthreshold slope increase, DIBL variations with drain voltage and threshold voltage shift variations are systematically analyzed with the general variability issues including oxide thickness, channel thickness and doping concentration. Potential distribution in the body channel region is also analyzed. Optimum values of the variability factors are considered …
Published in Journal of Semiconductor Devices and Circuits · Vol. 2, Issue 2, 2015 · pp. 18–27 Read article
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On a Nanocomposite Metal Oxide Thin-film Transistor with Nanofilm Gate Dielectric Material: Material Chemistry, Sol–Gel Process and Electronic Worthiness
Abstract: ABSTRACT : ILO based MOTFT is fabricated with PBZ gate dielectric. PBZ is formed over doped Si substrate by cheap sol-gel process. Thin film PBZ is analysed with XRD, UV-Vis and AFM. IZO is used as bottom gate to contact TFT. This device needs only 5V as operating voltage, and so is good for lower electronics <40V. It shows excellent e-mobility 4.5cm2/V/s, with on/off ratio 5x105 and sub-threshold swing 0.35V/decade.
Published in Journal of Thin Films, Coating Science Technology & Application · Vol. 6, Issue 3, 2019 · pp. 8–12 Read article
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Effect of Annealling on Optical Band Gap of Fe2O3 Thin Films on Amorphos Transparent Glass Substrate by Spray Pyrolysis Method
Abstract: The Fe 2 O 3 thin film has widely used photo-electrochemical cells. In this paper, the optical properties like band gap of thin films is depend on annealed temperature at 100 o C and 200 o C was discussed. The optical property of Fe 2 O 3 are studied by UV- Vis spectroscopy .The optical band gap decreased after increasing annealing temperature. The refractive index of Fe 2 O 3 …
Published in Journal of Thin Films, Coating Science Technology & Application · Vol. 10, Issue 2, 2023 · pp. 25–29 Read article
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Optimization and Analysis of InGaAs Vertical Nanowire Transistor for Memory Array Applications
Abstract: In this paper, we present a cylindrical gate all around In 0.53 Ga 0.47 As Vertical Nanowire Transistor (VNWT) on silicon at ultra-shortchannel gate length 14nm by numerical simulation approach. The In 0.53 Ga 0.47 As VNWT device dimensions like diameter, source and drainextension length and channel doping are taken as critical process parameters and optimized for better performance. The proposed device isscalable up-to 10nm with a maximum On-current of …
Published in Journal of VLSI Design Tools and Technology · Vol. 13, Issue 2, 2023 · pp. 32–44 Read article
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Turbulence Characteristics of Flow over Smooth and Rough Beds
Abstract: Experimental study on turbulence measurements in an open channel with smooth and rough beds using acoustic doppler velocimeter (ADV) has been carried out in the present study. Measured velocity distribution along the depth on smooth and rough beds for different discharges and bed slopes is in good agreement with logarithmic law. The turbulence intensities were more near the bed and less near the water surface. Existing equations for turbulence intensities …
Published in Recent Trends in Civil Engineering & Technology · Vol. 2, Issue 1-3, 2012 · pp. 160–166 Read article
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Comparative Study of MEH-PPV, Alq3 and P3HT based OLEDs
Abstract: AbstractElectroluminescence behavior of MEH-PPV (Poly [2-methoxy-5-(2’-ethyl-hexoxy)-1, 4 phenylenevinylene]), Alq3 (Tris (8-hydroxyquinolinato) aluminium) and P3HT as the emissive layer has been investigated in the organic light emitting diode (OLED). 2D numerical simulations have been performed using finite element method from device simulation software ALTLAS from Silvaco Inc. Effect of doping concentration and thickness of active layer on device performance has been studied.Keywords: OLED, numerical simulation, P3HT, MEH-PPV, Alq3Cite this ArticleShilpi Raj, …
Published in Trends in Opto-electro & Optical Communication · Vol. 8, Issue 2, 2018 · pp. 25–43 Read article
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Optical Characteristics of Amorphous Se-Ge-Ag Thin Films
Abstract: AbstractDetailed studies on impurity dependence of the optical structural properties have been carried out on Se-Ge-Ag thin film samples prepared by thermal evaporation technique. The effect of the addition of varying amounts of silver in concentrations from 5 to 15 molar percent to Se-Ge system were analyzed systematically under the room temperature. The optical transmission and reflection spectra of these films were measured in the range of 300–900 nm. The …
Published in Trends in Opto-electro & Optical Communication · Vol. 6, Issue 3, 2016 · pp. 33–38 Read article
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BER Performance of Hybrid 2×8 SCM/WDM System Based on Raman Amplifier
Abstract: AbstractWhen subcarrier multiplexing (SCM) is combined with wavelength division multiplexing (WDM) the resultant hybrid multiplexing strategy can benefit from readily available commercial components. Hybrid SCM/WDM systems are quite useful for LAN and MAN applications. They can provide broadband integrated services to the subscriber. This paper investigates the performance of two module SCM transmitter that consist of eight binary phase shift keying modulated data streams each transmitted at a speed of …
Published in Trends in Opto-electro & Optical Communication · Vol. 6, Issue 1, 2016 · pp. 1–7 Read article
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An Analysis of Optical Transmission System using Fiber Bragg Grating (FBG) with Power Optimization and Dispersion Compensation
Abstract: AbstractThe Fiber Bragg Grating (FBG) is a low cost filter for wavelength selection and also has low insertion loss. We know that Dispersion Compensation (DC) and Power Optimization (PO) are one of the most important parameters of the optical communication system. In this proposed communication model, dispersion compensation has been achieved and also we optimized almost same power at the receiver end, also we have calculated output power for different …
Published in Trends in Opto-electro & Optical Communication · Vol. 5, Issue 2, 2015 · pp. 1–5 Read article
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Simulated Design and Characterization of an Efficient Nd:YAG based Solar Pumped Single Mode Laser
Abstract: AbstractAs the current solar pumped lasers have shown to yield a very low efficiency, this research explores the possibility of a simulated design which can be more efficient in converting solar energy into optical power. This paper presents the software design of a Neodymium Doped Yttrium Aluminum Garnet (Nd3+:Y3 Al5 O12) Laser using LASCAD and also presents the characterization of the design using a theoretical mathematical model. Overall, results of …
Published in Trends in Opto-electro & Optical Communication · Vol. 5, Issue 3, 2015 · pp. 39–49 Read article
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Effects of EDFA Parameters on the Performance of A 4-Channel CWDM Optical Communication System
Abstract: AbstractIn this work, the performance of EDFA has been analyzed in Conventional band (C- band) based on its three types of application system i.e. pre-amplifier, post-amplifier and inline amplifier system. To check the performance for these three application system, a 4-channel Coarse Wavelength Division Multiplexing (CWDM) system has been designed using EDFA with optical CWDM fiber. By varying the length and numerical aperture (NA) of EDFA, different factors such as …
Published in Trends in Opto-electro & Optical Communication · Vol. 4, Issue 2, 2014 · pp. 33–38 Read article
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Characterizing L-Band EDFA for WDM Optical Communication using Implicit Analytical Model
Abstract: ABSTRACT In this paper, some of the significant design parameters of L-band EDFA such as choice of optimum pump wavelength, optimum erbium-doped fiber (EDF) length, and optimum pump power have been characterized by solving implicit analytical signal gain equation using simulation as derived for C-band EDFA by F. F. Rühl. After determining optimum pump wavelength, optimum pump power and optimum EDF length, performance of L-band signal amplification has been shown …
Published in Trends in Opto-electro & Optical Communication · Vol. 2, Issue 3, 2012 · pp. 8–16 Read article
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BER Analysis in Optical Fiber Communication System using Different Optical Amplifiers
Abstract: AbstractThis paper describes the simulation study of losses that occurs in the optical fiber communication system with and without optical amplifiers. The analysis is done in the OPTISYSTEM 16.0 software on the basis of Q-factor, BER and eye height for different optical amplifiers which are Erbium Doped Fiber Amplifier (EDFA) and Semiconductor Optical Amplifier (SOA)Keywords: BER, eye diagram, Q-factor, eye height, SOA, EDFA, OPTISYSTEM 16.0Cite this ArticleArpitha G.A. BER Analysis …
Published in Trends in Opto-electro & Optical Communication · Vol. 9, Issue 3, 2019 · pp. 33–42 Read article
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Electroluminescence
Abstract: Electroluminescence (EL) is a kind of luminescence which is an optical and electrical phenomenon in which light is emitted by certain materials due to the passage of an electric current or a strong electric field. The mechanism behind electroluminescence is the radiative recombination, or spontaneous emission. The electrons get excited and release their energy as photons. The holes and electrons before recombining are separated either by doping the given material …
Published in Trends in Opto-electro & Optical Communication · Vol. 11, Issue 1, 2021 · pp. 13–18 Read article