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32 articles for “semiconductor switching”
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Thermo-Parasitic-Aware Adaptive Switching Model (TPASM) for High-Frequency Microelectronic Power Devices
Abstract: The increasing switching frequency of modern solid-state semiconductor devices has intensified the influence of parasitic inductance, parasitic capacitance, temperature-dependent conduction losses, and transient voltage and current stresses. Conventional switching-loss models generally treat these effects independently, resulting in limited accuracy when the device operates under high-frequency and thermally varying conditions. This paper proposes a Thermo-Parasitic-Aware Adaptive Switching Model (TPASM) for coupled electrical, thermal, and parasitic analysis of high-frequency solid-state devices. The …
Published in Journal of Microelectronics and Solid State Devices · Vol. 13, Issue 2, 2026 Read article
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Design and Simulation of Improved Multilevel Inverter For Solar Photovoltaic Applications
Abstract: The energy is extending rapidly, anyway will stand up to the modernization of India and fiscal turn of events, further reviving the pace of the test, especially considering the improvement of India's basic amassing approach needs. Starting late, influence age has extended rapidly, yet the business is filled by neighborhood dispersion associations, circulation frameworks and transmission frameworks, and the cash related condition is moderate and convincing. The display of photovoltaic …
Published in Journal of Power Electronics and Power Systems · Vol. 10, Issue 2, 2020 · pp. 34–46 Read article
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PI Control Based switching Fault control in Four Switch Voltage Source Inverter
Abstract: This paper presents a fault tolerant control in four switch voltage source inverter by using PI controller. Four switch voltage source inverter has four switches with two legs and DC input link. Four switch voltage source inverter (FSVSI) can produce a three phase ac voltage as in six switch three phase voltage source inverter with only a four power semiconductor switches in a short of two switches. The two switch …
Published in Journal of Semiconductor Devices and Circuits · Vol. 9, Issue 1, 2022 · pp. 21–28 Read article
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Overcurrent Elimination and Current Ripple Reduction in Multi- Motor Systems Fed by Reduced Switch-Count VSI Using Advanced Scheme for High-Performance Drive Applications
Abstract: This paper proposed a novel control approach for overcurrent removal and reduction of current ripple for multi-motor systems powered by a Voltage Source Inverter (VSI) with a reduced switch-count. This approach significantly enhances the regulation of armature current with improved performance of the drive while improving the hardware utilization of the inverter. Simulation and analysis showed the capability of the scheme to improve power quality and improve system reliability, making …
Published in International Journal of Electrical Power and Machine Systems · Vol. 4, Issue 2, 2026 Read article
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Torque Ripple Minimization of High-Power Fed Induction Motor Drive Using Low Switching Frequency
Abstract: Multi-level inverter has emerged as an important topology in the area of high-power-medium voltage energycontrol applications due to its several advantages such as its good harmonic rejection capability, betteroutput voltage with reduced ripple, reduction of voltage ratings of the power semiconductor switchingdevices and also the reduced electro-magnetic interference problems, etc. This paper presents the torqueripple minimization and the performance under different operating conditions (dynamic and steady state) ofindirect vector-controlled high-power …
Published in Journal of Power Electronics and Power Systems · Vol. 1, Issue 1-2-3, 2011 · pp. 72–83 Read article
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Self-Compensation of Commutation Phase Error for Brushless DC Motor
Abstract: BLDC motors are synchronous motors powered by DC electricity via an inverter which produces an AC electric current to drive each phase of the motor via a closed loop controller. Electronic commutation is the on-and-off of the semiconductor switches at appropriate time to turn stator windings. Commutation phase ripple is generated due to the different exchange rate between outgoing phase current and incoming phase current of inverter during commutation period. …
Published in Trends in Electrical Engineering · Vol. 8, Issue 3, 2018 · pp. 72–81 Read article
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Switched Capacitor-based RC Filter
Abstract: Today we know that the demand of low voltage for low power integrated circuits (ICs) are used for growing the portable equipment in all the markets including telecommunication, computers and customer electronics with smaller size. The low voltage need for ICs is also motivated by the new dip submicron complementary metal oxide semiconductor (CMOS) technology scaling that required all transistors of smaller size. In current years, a lot of researches …
Published in Journal of VLSI Design Tools and Technology · Vol. 6, Issue 1, 2016 · pp. 32–40 Read article
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Study the Effect of Applied Gate Voltage on Threshold Potential and Carrier Transport Behavior of Three-Terminal Novel Prototype Device having Configuration P-type Si/SiO2/CuFeS2/Al
Abstract: This study presents a trial approach for the fabrication and characterization of a novel p-Si/SiO₂/CuFeS₂/Al field-dependent three-terminal electronic device designed to investigate charge transport behavior across multiple semiconductor junctions under externally applied bias voltages. The proposed prototype incorporates CuFeS₂ (chalcopyrite) as the active semiconductor layer, marking its first reported application in a field-induced electronic device architecture. The device was fabricated using a layered heterostructure consisting of p-type silicon, a silicon …
Published in International Journal of Crystalline Materials · Vol. 3, Issue 2, 2026 · pp. 1–7 Read article
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Current Fed Push-Pull Converter for High Voltage Gain Applications
Abstract: AbstractAn isolated high step up voltage gain with appropriate duty ratio with application on energy storage system is proposed. As push pull converters are step down converters, here, this topology will help in step up the voltage. This converters semiconductor device maintains zero current switching (ZCS). Push pull converter has only two devices with common ground with source requiring simple gate driving circuitry.Keywords: Current fed push-pull, variable frequency modulation, zero …
Published in Journal of Semiconductor Devices and Circuits · Vol. 5, Issue 2, 2018 · pp. 33–42 Read article
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Deep Learning-Based Thermal Prediction Models for Solid-State Electronic Devices
Abstract: The rapid advancement of solid-state electronic devices in high-performance computing, communication systems, automotive electronics, and renewable energy applications has significantly increased concerns related to thermal management and device reliability. Excessive heat generation in semiconductor devices adversely affects operational efficiency, switching performance, lifespan, and overall system stability. Traditional thermal prediction methods often require complex numerical computations and extensive simulation time, making them less suitable for real-time monitoring and adaptive control applications. …
Published in International Journal of Solid State Innovations & Research · Vol. 4, Issue 1, 2026 Read article
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Unified Mathematical Framework for Semiconductor Devices, Junction Dynamics, and Circuit Analysis
Abstract: Semiconductor devices form the fundamental building blocks of modern electronic and integrated circuit systems, where their electrical behavior is governed by coupled carrier transport, electrostatic, and circuit-level phenomena. This work presents a unified mathematical framework for modeling semiconductor devices, junction dynamics, and their interaction with electronic circuits. The formulation integrates fundamental semiconductor relations, carrier concentration, drift–diffusion transport, Poisson’s equation, continuity equations, PN-junction behavior, diode characteristics, bipolar junction transistor operation, and …
Published in Journal of Semiconductor Devices and Circuits · Vol. 13, Issue 2, 2026 · pp. 37–47 Read article
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Physics of Semiconductors and Electronic Circuits
Abstract: This study talks about the basic ideas behind semiconductor physics and how important they are for making and running modern electronic circuits. It starts with a look at intrinsic and extrinsic semiconductors, going into how charge carriers move, energy band theory, and how doping affects how well the electricity flows. Next, the conversation turns to semiconductor devices like diodes, bipolar junction transistors (BJTs), and field-effect transistors (FETs). The focus is …
Published in Journal of Semiconductor Devices and Circuits · Vol. 12, Issue 2, 2025 · pp. 9–17 Read article
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Impact of Semiconductor Material Properties on Device Behavior and Circuit Performance: A Comprehensive Review
Abstract: Semiconductor materials play a fundamental role in determining the performance, efficiency, and reliability of modern electronic devices and circuits. This review presents a comprehensive analysis of how intrinsic and engineered material properties influence device behavior and overall circuit functionality. Key parameters such as bandgap energy, carrier mobility, thermal conductivity, and defect density are examined to understand their direct impact on switching speed, power consumption, and operational stability. The paper explores …
Published in Journal of Semiconductor Devices and Circuits · Vol. 13, Issue 1, 2026 · pp. 19–26 Read article
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Novel Technique for the Analysis of Electronic Circuits Including Zener Diodes
Abstract: This paper addresses the analysis of electronic circuits including Zener diodes. It starts with a modified Zener diode model, which is based on expressions involving step-functions, its parameters such as the resistances in both current directions as well as its breakdown (or Zener) voltage. In contrast to the earlier approaches expressing the sharp discontinuities characterizing the step-functions in terms of inverse hyperbolic tangent terms, this paper adopts more concise and …
Published in Journal of VLSI Design Tools and Technology · Vol. 11, Issue 3, 2021 · pp. 31–41 Read article
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Simulation of Three Section Multilevel Inverter with Reduced Range of Switches
Abstract: Because of high generation development, the demand and excellent of electric strength ishigher than earlier than. Furthermore, due to the advancement of semiconductor, thespecification of electricity devices and strength conversion method turn out to be stricter. Oneof the energy converters that may remodel DC to AC is called inverter. An inverter is the intermedium to transmit the electricity to other electric device such as an uninterruptibleelectricity supply, servo motor, air-conditioner …
Published in Journal of VLSI Design Tools and Technology · Vol. 10, Issue 1, 2020 · pp. 15–36 Read article
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Analysis of Saturation Power based on Device Structural Parameters of a 1550 nm Symmetrical MQW Semiconductor Optical Amplifier
Abstract: AbstractThis paper presents the effect of device structure parameters on the saturation power of a 1550 nm symmetrical Multi Quantum Well (MQW) Semiconductor Optical Amplifier (SOA) for a small signal amplifier gain of 30 dB. Expressions are given to assess this dependency and the results indicate that saturation power decreases with the increase of the number of wells, well thickness and length but increases with the increase of barrier thickness. …
Published in Trends in Opto-electro & Optical Communication · Vol. 5, Issue 1, 2015 · pp. 13–18 Read article
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ULTRAFAST LASERS AND ITS USE IN ELECTRONICS INDUSTRY
Abstract: The size of semiconductors and packaged devices continues to shrink enabling the devices to become more compact . This trend requires the deployment of sophisticated equipments with inbuilt lasers that have unique capability to process diverse materials with high precision , but without damaging the electronic components due to heat . There are diverse laser technologies utilising longer pulse width or ultrashort pulse (USP) width that are employed in electronic …
Published in Journal of Semiconductor Devices and Circuits · Vol. 8, Issue 2, 2021 · pp. 34–45 Read article
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Power Factor Correction Using Parallel Boost Converter
Abstract: Power factor, the ratio between the active or average power and the apparent power forms a very essential parameter of the power system. It is indicative of how effectively the active power of the system has been utilized. With rapid development in power semiconductor devices, the usage of power electronic systems has expanded to a new and wide application range that include residential, commercial, aerospace and many others. Power electronic …
Published in Trends in Electrical Engineering · Vol. 5, Issue 3, 2015 · pp. 71–88 Read article
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Effects of High-κ on Device Performance of Nano-Regime GaN-based MOSFETs
Abstract: GaN-based metal-oxide semiconductor field-effect transistors (MOSFETs) are very promising for future digital-logic-device applications. Different gate dielectric materials are employed to evaluate the figure-of-merit of GaN-based MOSFETs. The gate length (LG) is kept constant at 10 nm. The gate voltage varies from 0 V to 1 V for the device switching from turn OFF to turn ON-state. For the device with HfO2 as gate oxide, the ON-state current (ION) and OFF-state …
Published in Journal of Semiconductor Devices and Circuits · Vol. 3, Issue 2, 2016 · pp. 21–26 Read article
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Advances and Challenges in the Development of High-performance Silicon Carbide (SiC) Power Devices
Abstract: Due to its distinct features, silicon carbide (SiC), a wide-bandgap semiconductor material, has attracted a lot of attention lately. SiC has superior electrical characteristics compared to silicon, making it an attractive material for high-performance power electronic devices. SiC-based devices can operate at higher temperatures, higher voltages, and higher switching frequencies, which can result in increased power density and efficiency. Recent advances in SiC device technology have led to the development …
Published in Journal of Semiconductor Devices and Circuits · Vol. 9, Issue 3, 2022 · pp. 15–20 Read article