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32 articles for “short channel effect”
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Reduction of Short Channel Effects with the Variation of Poly Doping and Source/Drain Doping
Abstract: In this paper, the concentration of poly-silicon doping and source/drain doping has been varied to obtain the approximation the OFF state leakage current for N channel MOSFET. A lightly doped NMOS has been designed using 45 nm technology in ATHENA and simulated in ATLAS of SILVACO TCAD tool. After simulation results, it has been observed that as the poly-silicon doping and source drain doping concentrations are decreased, there is a …
Published in Journal of Semiconductor Devices and Circuits · Vol. 4, Issue 3, 2017 · pp. 35–42 Read article
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Simulation of Threshold Voltage Variation of Enhancement Mode n-channel MOSFET
Abstract: AbstractThe paper focuses on simulation of variation of threshold voltage as a function of effective channel length of the short-channel MOSFETs with a Gaussian-like doping profile. An investigation of short channel effect (SCE) in deep submicron region has been carried out. The validity of the proposed simulation is shown by comparing the results with the numerical calculation and simulation of data obtained by using the commercially available simulation software. Finally, …
Published in Journal of Semiconductor Devices and Circuits · Vol. 4, Issue 2, 2017 · pp. 34–40 Read article
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A Two-Dimensional (2D) Analytical Model for Channel Potential and Threshold Voltage of Short Channel Triple Material Gate-Double Halo (TMG-DH) DG MOSFET
Abstract: In the present paper, an analytical model for the channel potential of short channel Triple Material Gate-Double Halo (TMG-DH) DG MOSFET has been presented using parabolic approximation method. Further, the threshold voltage of the device has been calculated using minimum mid channel potential and the result obtained has been compared with the threshold voltage of Triple Material double gate (TMDG) MOSFET in order to show the improvement in the threshold …
Published in Journal of Microelectronics and Solid State Devices · Vol. 6, Issue 2, 2019 · pp. 13–25 Read article
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Review Paper: Low Power SRAM Cell using FinFET Technology
Abstract: To make portable battery operated devices more efficient with low leakage current has become a major challenge with the technology scaling. As the technology is scaling, the bulk MOSFET faces various challenges which lead to increased leakage current. FinFET is the most encouraging substitute to bulk CMOS, because of the reduced short channel effect. The FinFET device based circuits portrays advantages with its better control over the device channel and …
Published in Journal of VLSI Design Tools and Technology · Vol. 8, Issue 1, 2018 · pp. 43–47 Read article
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Review Paper To Design a Low Power CNTFET Based XOR Gate
Abstract: The continuous scaling down of Silicon technology leads to various critical challenges and reliability issues such as short channel effect, high leakage current, interconnect problems, etc. CNTFET is the most probable substitutes to traditional MOSFET. The CNTFET device based circuits portray advantages with its better control over the device channel, reduced leakage current, reduced short channel effects. The CNTFET based XOR gate circuits incur the minimum power and energy dissipation. …
Published in Journal of VLSI Design Tools and Technology · Vol. 8, Issue 1, 2018 · pp. 48–53 Read article
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Improvement of Design Issues in FinFET based Design Techniques for XOR and XNOR Circuits at 45 nm Technology
Abstract: The scaling of conventional CMOS circuit inclines to the short channel effect due to leakage current increase in the circuit. To minimize the short channel effect, FINFET can be used in place of conventional CMOS circuits. This paper demonstrates comparative performance study of high speed, low power and low voltage on XOR and XNOR digital circuit. This paper assesses and compares the performance of XOR and XNOR logic circuits. This …
Published in Journal of Electronic Design Technology · Vol. 5, Issue 1, 2014 · pp. 22–35 Read article
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Performance Analysis of CMOS and FinFET Based SRAM
Abstract: As CMOS devices are scaled to nanometer regime, the consequences such as short channel effects and variations in the process parameters are increased which affects the reliability and performance of the circuit. In order to over these issues, FinFET can be used as a suitable replacement for CMOS as it is a promising and better technology without sacrificing the reliability and performance of the applications and the circuit design. In …
Published in Journal of VLSI Design Tools and Technology · Vol. 8, Issue 3, 2018 · pp. 23–27 Read article
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Analysis of DIBL Effect in MOSFET Working
Abstract: AbstractOne of the most widely used electronic devices, particularly in digital integrated circuits, is the metal insulator semiconductor (MIS) transistor. Most of the existing transistors used in fabrication of integrated chips are with junctions. The device scaling is growing the channel length between junctions in devices are scaling gone down to 10 nm. Drain Induced Barrier Lowering (DIBL) effect is prominent as the feature size of MOS device keep diminishing. …
Published in Journal of Microelectronics and Solid State Devices · Vol. 5, Issue 3, 2018 · pp. 33–40 Read article
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Simulation Study of Tapered Shape FinFET
Abstract: During recent years, nonplaner tri-gate (TG) field-effect transistors (FETs) such as FinFETs have been extensively studied for the enhancement of electrostatic control and suppression of short-channel effects (SCEs) in the sub50 nm regime. As the device scaled, it is observed that the shape of the rectangular FinFET becomes tapered shape. This paper presents the design and analysis of a tapered-shaped FinFET. By varying the sidewall inclination angle of a rectangular …
Published in Journal of VLSI Design Tools and Technology · Vol. 6, Issue 1, 2016 · pp. 21–31 Read article
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Design and Optimization of Nano scale Double Gate SOI-MOSFET for Analog Applications Using SILVACO TCAD
Abstract: In this paper the structure effect on electrical characteristics of 60-nm double-gate Silicon-on-Insulator Metal-Oxide-Semiconductor Field Effect Transistor (DG-SOI-MOSFETs) is explored. These structures enable more aggressive device scaling in nano scale region because of their ability to control short channel effects. Established a scaling theory which gives guidance for the device optimization (Silicon film thickness Tsi (20nm); gate oxide thickness Tox (3nm); buried oxide thickness Tbox (200nm) and gate length LG …
Published in Journal of Electronic Design Technology · Vol. 1, Issue 1-3, 2011 · pp. 7–17 Read article
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Performance Analysis of 3T DRAM Using FinFET Based with Leakage Reduction Techniques at 45 nm Technology
Abstract: The proposed area of research is to reduce the power consumption, leakage voltage, leakage current and leakage power of DRAM while maintaining the competitive performance. The Fin FET approach is used in DRAM for high performance. Fin type field effect transistors (Fin FET) are capable substitutes for bulk CMOS at the nano-scale. Fin FET are double gate device. A Fin FET uses an intrinsic body. It greatly suppresses the device-performance …
Published in Journal of VLSI Design Tools and Technology · Vol. 7, Issue 3, 2017 · pp. 28–34 Read article
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Performance Analysis of 3T DRAM Using FinFET Based with Leakage Reduction Techniques at 45 nm Technology
Abstract: The proposed area of research is to reduce the power consumption, leakage voltage, leakage current and leakage power of DRAM while maintaining the competitive performance. The Fin FET approach is used in DRAM for high performance. Fin type field effect transistors (Fin FET) are capable substitutes for bulk CMOS at the nano-scale. Fin FET are double gate device. A Fin FET uses an intrinsic body. It greatly suppresses the device-performance …
Published in Journal of VLSI Design Tools and Technology · Vol. 7, Issue 2, 2017 · pp. 28–34 Read article
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Investigation and Dependency Analysis of Silicon Film Thickness on Performance of Surrounding Gate MOSFET at Subthreshold Regime
Abstract: The characteristics of cylindrical gate all around MOSFET have been studied in terms of the dependence of various device performance metrics on silicon film thickness (Tsi). In this work, the effect of silicon film thickness on numerous performance metrics like threshold voltage (Vt), On current (Ion), subthreshold leakage current (Ioff), On-Off current ratio (Ion/Ioff) and DIBL of cylindrical GAA are comprehensively evaluated and analysed. It has been observed that cylindrical …
Published in Journal of VLSI Design Tools and Technology · Vol. 8, Issue 2, 2018 · pp. 49–54 Read article
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Comparative Analysis of MOSFET, CNTFET and NWFET for High Performance VLSI Circuit Design: A Review
Abstract: Nanowires are inimitable materials for considering phenomenon in nanoscale regime. Nanowires development exhibits ample of applications by controlling their, structure, composition as well as their electrical properties. This paper review diverse types of nanowires, nanowire field-effect transistor (NWFET) structure and their comparison with novel devices. Firstly, this paper describes different types of nanowires and nanowire heterostructure that shows nanowire heterostructures eliminates various factors that limit the performance of homogeneous nanowire …
Published in Journal of VLSI Design Tools and Technology · Vol. 6, Issue 2, 2016 · pp. 19–32 Read article
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Comparative Study of Drain Current of Symmetric and Asymmetric DG-MOSFET with Simulation in Silvaco TCAD Software
Abstract: One of the most attractive and promising devices for the nanoscale devices is the double gate MOSFET. The double gate MOSFET can control the Si channel very efficiently and it chooses a very small width of the Si channel. It controls the Si channel by applying gate contact to either side of the channel. The idea of controlling the S channel in such a way reduces the short channel effects …
Published in Journal of Semiconductor Devices and Circuits Read article
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High Performance Multi-Valued Logic (MVL)Gate Design Using FinFET
Abstract: CMOS scaling faces challenges such as leakage, power dissipation, and short channel effects. Multi-Valued Logic (MVL) offers higher information density and reduced interconnections. This work presents a FinFET-based MVL gate design that improves electrostatic control, switching speed, and reliability. Simulation results confirm reduced leakage power and enhanced performance compared to conventional logic. The proposed architecture demonstrates scalability for advanced technology nodes. It also shows potential for low-power applications in portable …
Published in Journal of Microelectronics and Solid State Devices · Vol. 13, Issue 1, 2026 · pp. 34–45 Read article
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Comparative Analysis of FD-DMDG SON MOSFET over FD DMDG SOI MOSFET
Abstract: AbstractIn the recent past, Silicon-on-Insulator (SOI) shows better device performance in comparison to bulk Silicon devices but it still suffers from different short channel effects (SCEs). Recently a structure, Silicon on Nothing (SON), has been suggested and investigated. It is structured to be capable of substantial reduction of SCEs and present better electrical characteristics in comparison to SOI. The absence of the buried layer results in the reduced electrostatic coupling …
Published in Journal of Electronic Design Technology · Vol. 9, Issue 1, 2018 · pp. 9–16 Read article
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Virtual Fabrication and Analog Performance of Sub-40nm Bulk MOSFET
Abstract: Virtual Fabrication of sub-40nm Bulk MOSFET is carried out under channel engineering and source drain engineering process. These structures enable more aggressive device scaling in nano-scale region because of their ability to control short channel effects. How ever during scaling the junction depth should also be scaled down, which increases parasitic resistance so silicidation technique has been applied to reduce their effects on device. Analog performance has been measured in …
Published in Journal of Electronic Design Technology · Vol. 1, Issue 1-3, 2011 · pp. 34–40 Read article
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VLSI Transistor and Interconnect Scaling Overview
Abstract: In this paper, various types of device and interconnect scaling used for VLSI transistors are mentioned. Advanced device scaling techniques using SOI & FINFET technology are discussed for nano-devices. New technologies adopted at research level are stated here in brief. Keywords: Scaling factor ‘s’, technology or process node, short-channel effects, draininduced barrier lowering, punch through, surface scattering, velocity saturation, impact ionization, hot electrons, SOI, floating body, FinFET, quantum dot cellular …
Published in Journal of Electronic Design Technology · Vol. 5, Issue 1, 2014 · pp. 1–15 Read article
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Study and Analysis on Multi-gate MOSFET Design
Abstract: AbstractMulti-gate MOSFET is the emerging technology that is used in the area of low-power VLSI design. Multi-gate devices provide much better advantages over conventional MOSFET. As less power dissipation, decrease size, and more operational value could be obtained. Multi-gate MOSFET devices also reduce cost of production. Thus, design of electronics devices based on multi-gate technology is beneficial in today’s requirement. Basic MOSFET due to its reduction in size shows short …
Published in Journal of Semiconductor Devices and Circuits · Vol. 7, Issue 1, 2020 · pp. 1–7 Read article