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11 articles for “quantum channel”
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Quantum Key Distribution Based on BB84 Protocol
Abstract: Classical cryptosystem, which is based on mathematical complexity and irrationally time-consuming to decode, is endangered with the inception of quantum computers empowered with unprecedented computational processing along with sophisticated quantum algorithms. Thus requiring quantum cryptography and Quantum Key Distribution (QDK) protocol for secured key distribution. This thesis work contributes to the field of cryptography. First of all, it shows unconditionally secured QKD which is bound by quantum mechanics laws. It …
Published in Journal of Semiconductor Devices and Circuits · Vol. 10, Issue 3, 2024 · pp. 26–32 Read article
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Quantum-Fuzzy Tensor Operators and Uncertainty-Band Bifurcation for Symmetry-Preserving State Discrimination
Abstract: A tensor-operator framework is developed for fuzzy conjunction, fuzzy disjunction, and symmetry-preserving state discrimination in multi-qubit quantum systems. In this formulation, fuzzy membership and non-membership degrees are represented through expectations of effect operators acting on density matrices, providing a natural bridge between fuzzy logic and quantum measurement theory. Conjunction and disjunction operations are extended to the quantum domain via tensorised channels, constructed using projective measurements and unitary transformations, enabling logical …
Published in Emerging Trends in Symmetry · Vol. 2, Issue 1, 2026 · pp. 08–15 Read article
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Enhancing Security in Unified Software Architecture for Smart Computing IoT Devices via Mobile App Authentication Using Quantum-Based Encryption
Abstract: Security remains a critical concern in the landscape of smart computing for IoT devices, necessitating robust measures to safeguard sensitive data and user privacy. In this context, the utilization of quantum-based encryption presents a promising avenue to enhance security in unified software architecture. This study proposes a model aimed at fortifying the security of IoT devices by integrating mobile app authentication with quantum-based encryption techniques. The model leverages Quantum Key …
Published in Recent Trends in Parallel Computing · Vol. 12, Issue 3, 2025 · pp. 41–48 Read article
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Thin-Film Quantum Photonic Technologies for Quantum Teleportation
Abstract: One of the most important protocols in distributed quantum computing and quantum communication is quantum teleportation, which allows quantum information to be sent between distant nodes without actually sending the quantum particle. The teleportation process is fundamentally based on quantum entanglement, Bell state measurements, and classical communication channels, which collectively allow the accurate reconstruction of an unknown quantum state at a remote location. In recent years, rapid progress in integrated …
Published in Journal of Thin Films, Coating Science Technology & Application · Vol. 13, Issue 2, 2026 · pp. 01–19 Read article
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Quantum Behavior of Charge Carriers in a Symmetrical Double Gate MOSFET
Abstract: Our earlier work on modeling of single gate n-channel metal oxide semiconductor field effect transistor (MOSFET) has been extended to discuss the quantum behavior of charge carriers in symmetrical double gate (DG) MOSFET. The potential profile in the channel region of DG MOSFET has been obtained in parabolic approximation. The parabolic potential facilitates analytical expression for electric field. The appropriate Schrodinger’s equation has been solved to obtain wave functions in …
Published in Journal of VLSI Design Tools and Technology · Vol. 11, Issue 1, 2021 · pp. 17–28 Read article
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Advanced Mathematical Modelling of Nanoscale Semiconductor Devices for Low-Power Microelectronic Applications
Abstract: With the ongoing scaling down of semiconductor devices, there is an increasing need for accurate mathematical models of electrostatic control, carrier transport, leakage current, and power consumption at the nanometer scale. As the sizes of semiconductors continue to decrease, there is a growing need for accurate mathematical models of electrostatic control, carrier transport, leakage current, and power consumption at the nanometer scale. In this work, a common mathematical modelling approach …
Published in Journal of Microelectronics and Solid State Devices · Vol. 13, Issue 2, 2026 Read article
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An Overview on MOSFET based Sensor Design
Abstract: In the past two decades the MOSFET has transformed from a simple switch in digital logic to an analog powerhouse that can be cofabricated with the sensing material on a single chip. MetalOxideSemiconductor FieldEffect Transistors (MOSFETs) have silently become the beating heart of modern sensor platforms, translating the faint whispers of physical, chemical, and biological phenomena into robust electrical signatures. This abstract surveys the latest advances that have turned the …
Published in Journal of Microelectronics and Solid State Devices · Vol. 13, Issue 1, 2026 · pp. 20–26 Read article
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Machine Learning Assisted Optimization of Nanoscale MOSFET Parameters Using TCAD Simulation
Abstract: This paper presents a machine learning (ML) assisted framework for the multi-objective optimization of nanoscale bulk n-channel metal-oxide-semiconductor field-effect transistors (nMOSFETs) with a 10 nm physical gate length, high-k HfO₂ gate dielectric, and TiN metal gate. Technology computer-aided design (TCAD) simulations employing drift-diffusion transport, Shockley-Read-Hall recombination, Lombardi mobility degradation, and density- gradient quantum correction models are used to generate a parametric dataset of 2,400 device configurations spanning gate length (L), …
Published in Journal of Microelectronics and Solid State Devices · Vol. 13, Issue 1, 2026 · pp. 10–19 Read article
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VLSI Transistor and Interconnect Scaling Overview
Abstract: In this paper, various types of device and interconnect scaling used for VLSI transistors are mentioned. Advanced device scaling techniques using SOI & FINFET technology are discussed for nano-devices. New technologies adopted at research level are stated here in brief. Keywords: Scaling factor ‘s’, technology or process node, short-channel effects, draininduced barrier lowering, punch through, surface scattering, velocity saturation, impact ionization, hot electrons, SOI, floating body, FinFET, quantum dot cellular …
Published in Journal of Electronic Design Technology · Vol. 5, Issue 1, 2014 · pp. 1–15 Read article
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Comparative Analysis of MOSFET, CNTFET and NWFET for High Performance VLSI Circuit Design: A Review
Abstract: Nanowires are inimitable materials for considering phenomenon in nanoscale regime. Nanowires development exhibits ample of applications by controlling their, structure, composition as well as their electrical properties. This paper review diverse types of nanowires, nanowire field-effect transistor (NWFET) structure and their comparison with novel devices. Firstly, this paper describes different types of nanowires and nanowire heterostructure that shows nanowire heterostructures eliminates various factors that limit the performance of homogeneous nanowire …
Published in Journal of VLSI Design Tools and Technology · Vol. 6, Issue 2, 2016 · pp. 19–32 Read article
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A Review of Blocking Side-Channel Threats in Parallel Cloud Systems
Abstract: Side-channel attacks (SCAs) pose a critical security threat to parallel computing systems, particularly in shared cloud environments where multi-tenancy and resource contention create exploitable vulnerabilities. This study presents a comprehensive review of SCAs in parallel architectures, analyzing attack vectors such as cache-based exploits (e.g., Prime + Probe, Flush + Reload), timing attacks, power analysis, and network-based covert channels. We examine real-world cases including Spectre and Meltdown vulnerabilities that exposed fundamental …
Published in Recent Trends in Parallel Computing · Vol. 12, Issue 2, 2025 · pp. 15–25 Read article