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7 articles for “nanowire FET”
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Effect of Doping and Crystal Orientation on Channel Current for Multigate Si Nanowire FET
Abstract: This manuscript investigates the effects on channel current by varying gate orientation as well as channel doping concentration for Si nanowire FET. Both gate and drain voltage biasing are considered here for showing variations in channel current. After analyzing simulation results for silicon 100 and 110 crystal orientation it has been found that gate all around and top gate only show significant increment in channel current on different occasions over …
Published in Journal of VLSI Design Tools and Technology · Vol. 7, Issue 2, 2017 · pp. 20–29 Read article
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A Comparative Analysis of Characterization of Silicon Nanowire and CNT FETs
Abstract: The CMOS technology has been replaced by nano-scale semiconductor devices for future nanotechnology. These nano scale semiconductor devices have been replaced by nanowire FET and CNT FET due to their outstanding device physics. In this paper, a comparative analytical study on the basis of their operation, characteristics, structure and design has been investigated. HSPICE has been used to simulate CNT FET and comparison has been done with nanowire FET. The …
Published in Journal of Nanoscience, NanoEngineering & Applications · Vol. 10, Issue 2, 2020 · pp. 37–49 Read article
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Electrical Performance of the Silicon Nanowire Double Gate FET
Abstract: Silicon nanowire (SiNW) metal-oxide-semiconductor field-effect transistor (MOSFET) is a promising candidate of future CMOS device for further scaling. As the cross-sectional dimensions of SiNW channel is very small, cross-sectional shapes should affect electrical characteristics of SiNW FETs. In this work, effects of cross-sectional shapes of gate stack formation on (i) properties of double gate of SiNW FET; (ii) carrier transport properties including on-current, effective carrier mobility and inversion charge density; …
Published in Nano Trends – A Journal of Nano Technology & Its Applications · Vol. 22, Issue 3, 2020 · pp. 5–11 Read article
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A Technological Review on Quantum Ballistic Transport Model Based Silicon Nanowire Field Effect Transistors for Circuit Simulation and Design
Abstract: Nanowire MOSFETs are recognized as one of the most promising candidates to extend Moore’s law into nanoelectronics era. This paper reviews the process, application, device physics and compact modeling of Gate All around (GAA) nanowire MOSFETs. The most widely used methods of nanowire synthesis have been discussed. The paper presents the various device optimization techniques and scaling potential of nanowire transistors. A process sensitivity study of silicon nanowire transistors at …
Published in Journal of Nanoscience, NanoEngineering & Applications · Vol. 5, Issue 2, 2015 · pp. 20–31 Read article
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Advanced Mathematical Modelling of Nanoscale Semiconductor Devices for Low-Power Microelectronic Applications
Abstract: With the ongoing scaling down of semiconductor devices, there is an increasing need for accurate mathematical models of electrostatic control, carrier transport, leakage current, and power consumption at the nanometer scale. As the sizes of semiconductors continue to decrease, there is a growing need for accurate mathematical models of electrostatic control, carrier transport, leakage current, and power consumption at the nanometer scale. In this work, a common mathematical modelling approach …
Published in Journal of Microelectronics and Solid State Devices · Vol. 13, Issue 2, 2026 Read article
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Comparative Analysis of MOSFET, CNTFET and NWFET for High Performance VLSI Circuit Design: A Review
Abstract: Nanowires are inimitable materials for considering phenomenon in nanoscale regime. Nanowires development exhibits ample of applications by controlling their, structure, composition as well as their electrical properties. This paper review diverse types of nanowires, nanowire field-effect transistor (NWFET) structure and their comparison with novel devices. Firstly, this paper describes different types of nanowires and nanowire heterostructure that shows nanowire heterostructures eliminates various factors that limit the performance of homogeneous nanowire …
Published in Journal of VLSI Design Tools and Technology · Vol. 6, Issue 2, 2016 · pp. 19–32 Read article
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Performance Improvement of Nano Field Effect Transistor Based on Zinc Oxide Semiconducting Materials – a Critical Analysis
Abstract: New semiconductor materials and new shapes for contemporary nanostructured semiconductor devices, like nanowires, have been researched as a result of advancements in transistor technology. Because of their unique electrical, photonic, and sensing capabilities, nanowires (NWs) constructed of various semiconductor material systems (gallium arsenide, zinc oxide, etc.) have been the subject of intense research over the past 20 years. Due to its distinctive properties, including high electron mobility, high crystalline quality, …
Published in Journal of Polymer & Composites · Vol. 12, Issue 2, 2024 · pp. 99–107 Read article