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12 articles for “Single electron transistor”
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Modelling and Electrical Characterization of Single Electron Transistor
Abstract: A nano-electronic device with low power consumption, high performance, and quantum effects is the single electron transistor (SET). It's used in charge sensor applications, infrared radiation detectors, and spectroscopy. However, it faces limitations in lithography, co-tunneling effect, low gain, high output impedance, and background charges. Therefore, prior simulation is needed to optimize SET's work function and understanding physics concepts. A master equation approach is used to propose a new model …
Published in Journal of Semiconductor Devices and Circuits · Vol. 10, Issue 3, 2024 · pp. 19–25 Read article
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Polymer-coated Composites: Enhancing Performance in Single Electron Transistors
Abstract: The single electron transistors (SETs) have potential for ultra-low power operation and quantum coherence, and due to this it guarantees for next-generation electronics devices and quantum computing. SETs have the ability to control movement of a single electron and this unique ability allows significant advancement in the energy efficiency and device miniaturization. There are some obstacles that need to be overcome to achieve reliable and effective operation, particularly for room …
Published in Journal of Polymer & Composites · Vol. 13, Issue 1, 2025 · pp. 108–114 Read article
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Polypyrrole-Based Conductive Polymer-Gated Single Electron Transistor with Deep Neural Network Assistance for Biomedical Energy Harvesting and Charge Detection
Abstract: The increasing demand for intelligent biomedical monitoring systems has accelerated research into ultra-low-power sensing technologies capable of operating with high sensitivity and minimal energy consumption. Conductive polymers have attracted considerable attention for biomedical and nanoelectronic applications due to their tunable electrical properties, biocompatibility, and environmental stability. Among them, Polypyrrole (PPy) is a promising functional polymer that can enhance charge transport and electrostatic coupling in nanoscale devices. In this work, a …
Published in Journal of Polymer & Composites · Vol. 14, Issue 4, 2026 Read article
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Hybrid CMOS-SET Inverter Design for Improved Performance using Tied Body-backgate Technique
Abstract: Single-electron transistors (SETs) are an attractive candidate for future functional elements in LSIs, because of their low-power consumption and small size. Integration of current CMOS technology with the emerging SET devices is an effective approach for improving density of integration in VLSI chips and ensuring ultra low power dissipation along with the advantages of CMOS technology like high gain, current drive, speed and matured fabrication technology. This paper investigates hybrid …
Published in Journal of VLSI Design Tools and Technology · Vol. 5, Issue 1, 2015 · pp. 24–29 Read article
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Effect of Aluminium Nitride Layer on the Electrical Performance of Microelectronic HEMTs
Abstract: AbstractIn this simulation work, a series of simulation outputs are reported related to the AlGaN/GaN single-heterojunction high electron mobility transistors (HEMTs). The effect of aluminium nitride nucleation layer on the drain characteristics is significant in single-heterojunction AlGaN/GaN HEMTs. The effects of drain voltage and gate voltage on the drain current are studied in the designed and simulated device structures. This simulation work may be a useful prediction to fabricate the …
Published in Journal of Microelectronics and Solid State Devices · Vol. 4, Issue 3, 2017 · pp. 9–12 Read article
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VLSI – Power, Expansion and Versatility
Abstract: The evolution of Very Large-Scale Integration (VLSI) technology has significantly transformed the landscape of modern electronics, driving innovations across diverse industries. This article explores the key attributes of VLSI, focusing on its power, expansion, and versatility. VLSI's power lies in its ability to integrate thousands to millions of transistors on a single chip, enabling the development of high-performance, energy-efficient devices. The expansion of VLSI technology is exemplified by its application …
Published in International Journal of VLSI Circuit Design & Technology · Vol. 3, Issue 1, 2025 · pp. 1–8 Read article
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Studies on the DC Characteristics of Nanoelectronic Single-Heterojunction GaN based HEMTs with AlGaN Layer of 22 nm
Abstract: AbstractIn this work, total 2367 individual simulation-outputs are reported. We have studied the drain characteristics in AlGaN/GaN high electron mobility transistors (HEMTs) having the AlGaN thickness of 22 nm. According to this study, the drain current increases with drain voltage. Also, the drain current increases with gate voltage. The drain current is observed as higher at larger aluminium mole fraction. Also, the drain current is higher at larger doping concentration. …
Published in Journal of Microwave Engineering and Technologies · Vol. 5, Issue 1, 2018 · pp. 1–12 Read article
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Designing of GaAs Based Resonant Tunneling Diode and Nano Scale Applications with Considering NEGF
Abstract: Present situation of eletronic area in the world required small devices as well as low power dissipation and ultra high speed application. At this moment the presence of resonant tunneling diode can over come this type of problem and take a big role in nanoscale digital and analog applications.In this researh article is to demonestrated effect of asymmetric barrier with respect to symmetric barrier and digital inverter and THz analog …
Published in Journal of VLSI Design Tools and Technology · Vol. 5, Issue 1, 2015 · pp. 1–18 Read article
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Layout Design, Fabrication and Characterization of n-Channel MOSFET
Abstract: Primary force behind evolution of semiconductor industry is MOSFET, after its first IC based experimental demonstration in 1960s. It is fundamental working unit of most of the electronic circuits like cells in living being. Number of devices on a single chip has been increased with rapid phase with evolution of new technology of materials. Today there are more than 4 billion transistors are there on a single chip with effective …
Published in Journal of VLSI Design Tools and Technology · Vol. 6, Issue 2, 2016 · pp. 13–18 Read article
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Ultra Low-Power 9-Transistor Flip-Flop Design
Abstract: AbstractThe use of very large scale integration technology in high performance computing, wireless communication, consumer electronics has been rising at a very fast rate. The challenge for VLSI technology is mainly in leakage power consumption. Flip-Flops (FFs) are the basic storage elements used extensively in digital system designs. It accounts for 20%–45% of the total system power and may considerably impact the chip area. In this paper, an ultra-low-power true …
Published in Journal of Microelectronics and Solid State Devices · Vol. 5, Issue 3, 2018 · pp. 27–32 Read article
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Switched Capacitor-based RC Filter
Abstract: Today we know that the demand of low voltage for low power integrated circuits (ICs) are used for growing the portable equipment in all the markets including telecommunication, computers and customer electronics with smaller size. The low voltage need for ICs is also motivated by the new dip submicron complementary metal oxide semiconductor (CMOS) technology scaling that required all transistors of smaller size. In current years, a lot of researches …
Published in Journal of VLSI Design Tools and Technology · Vol. 6, Issue 1, 2016 · pp. 32–40 Read article
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Computational Modeling of Polymer Semiconductors for Electronic Applications
Abstract: Polymer semiconductors have become important materials in modern electronic applications because they combine semiconducting behavior with mechanical flexibility, low-cost processing, and tunable molecular structure. Their growing use in organic field-effect transistors, organic photovoltaics, organic light-emitting diodes, and flexible sensing devices has increased the need for accurate computational approaches that can predict material properties and device performance before experimental fabrication. This paper reviews the major computational modeling techniques used for polymer …
Published in Journal of Polymer & Composites · Vol. 14, Issue 3, 2026 · pp. 132–146 Read article