Modelling and Electrical Characterization of Single Electron Transistor

Ashok D. Vidhate; Shruti Suman

Abstract

A nano-electronic device with low power consumption, high performance, and quantum effects is the single electron transistor (SET). It's used in charge sensor applications, infrared radiation detectors, and spectroscopy. However, it faces limitations in lithography, co-tunneling effect, low gain, high output impedance, and background charges. Therefore, prior simulation is needed to optimize SET's work function and understanding physics concepts. A master equation approach is used to propose a new model for simulating the I-V characteristics of a single-electron transistor (SET) in steady-state mode. Single-electron transistors have the characteristics of Coulomb blockade oscillation (SETs). SETs are able to achieve extra functionalities with fewer components because the tunnel junction discretely controls the transfer of charges. Poor voltage gain, limited current drivability, and low temperature operating are among of the SETs' drawbacks. The advantages of both MOSFET and SET technology are combined in hybrid MOS and SET designs. Use design arithmetic to safeguard circuits from background charges, minimize circuit area and power dissipation by utilizing the special Coulomb blockade oscillation feature of SET, and boost the dependability of SET-based systems. Conventional CMOS design techniques do not fully realize the benefits of SET. The model requires minimal computation, is quick, and accurate. It compares SET simulation using this model to the master equation method of quantum transport. The model accurately reflects the SET's electrical characteristics, with the coulomb blockade effect playing a significant role.

Abstract

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