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5 articles for “InGaAs”
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Optimization and Analysis of InGaAs Vertical Nanowire Transistor for Memory Array Applications
Abstract: In this paper, we present a cylindrical gate all around In 0.53 Ga 0.47 As Vertical Nanowire Transistor (VNWT) on silicon at ultra-shortchannel gate length 14nm by numerical simulation approach. The In 0.53 Ga 0.47 As VNWT device dimensions like diameter, source and drainextension length and channel doping are taken as critical process parameters and optimized for better performance. The proposed device isscalable up-to 10nm with a maximum On-current of …
Published in Journal of VLSI Design Tools and Technology · Vol. 13, Issue 2, 2023 · pp. 32–44 Read article
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Design of Photonic Sensor for Driver Assistance
Abstract: AbstractA report from National Highway Traffic Safety Association, USA, states that 100000 police reported crashes are a result of driver fatigue. This figure would be quite mind boggling for developing nations, where work periods are usually extended without conducting detailed scrutiny. Sophisticated vehicles are equipped with sensors for assisting drivers and providing them with time-critical accident alerts. However, there is a need to develop cheap and reliable sensors for 24x7 …
Published in Journal of Electronic Design Technology · Vol. 9, Issue 2, 2018 · pp. 14–23 Read article
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Simple Gain Model of Group III-V Semiconductor-based Laser Diode
Abstract: In these days, a layer of low bandgap material is sandwiched between two high bandgap layers.Most commonly-used pair of materials is gallium arsenide (GaAs) with aluminium galliumarsenide (AlGaAs) and Indium Phosphide (InP) with Indium gallium arsenide phosphide(InGaAsP) laser. A heterostructure is the junctions between different bandgap materials. Here,two such junctions are present, hence it is called the name "double heterostructure laser" orDH laser. The kind of laser diode may be …
Published in Recent Trends in Electronics Communication Systems · Vol. 7, Issue 3, 2020 · pp. 9–27 Read article
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Interface Engineering of Graphene Multi-Junction InGaP/GaAs/InGaAs/Ge Solar PVC
Abstract: AbstractThe main impediment faced by solar Photo-Voltaic Cell (PVC) is the excitation of charge carriers by high and low energy photons to make them reach the conduction band as this superintends the output device current. To enhance the device current, intermediate engineering of solar PVC is the most prominent strategy. An Inter-Mediate Layer (IML) serves as a spectrally selective layer between the muti-junctions for tandem solar cell. This research work …
Published in Trends in Opto-electro & Optical Communication · Vol. 8, Issue 1, 2018 · pp. 1–7 Read article
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Effects of Variation of Injection Current on Characteristics of a 1550 nm Semiconductor Laser
Abstract: AbstractThis work represents the prototype of both the analytical and the simulation based study on high speed communication system particularly high speed data transmission through optical fiber using 1550 nm InGaAsP/InP laser. In recent years, Vertical Cavity Surface Emitting Lasers (VCSELs) are prerequisites for future ultrahigh data-rate systems. This paper represents an overview on high speed performance of the 1550 nm VCSEL. Using MATLAB simulation tool the characteristics of the …
Published in Trends in Opto-electro & Optical Communication · Vol. 3, Issue 2, 2013 · pp. 1–6 Read article