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32 articles for “HEMT”
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Electro Thermal Simulation of AlGaN/GaN HEMT
Abstract: This paper presents electro thermal simulation of AlGaN/GaN High Electron Mobility Transistor (HEMT) without AlN layer nucleation layer and AlGaN/GaN HEMT by introducing AlN nucleation layer. With the help of Silvaco ATLAS lattice temperature of the devices figured out. It is observed that self heating in AlGaN/GaN HEMT without AlN nucleation layer is higher than the self heating in AlGaN/GaN HEMT with AlN nucleation layer. Simulation of lattice temperature inside …
Published in Journal of Semiconductor Devices and Circuits · Vol. 6, Issue 2, 2019 · pp. 18–27 Read article
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Novel Effect of Gate Length on the Electrical Characteristics of Nanoelectronic Double-Heterojunction HEMTs with the Circuit Symbols and Load Line to Configure the Common-Source Amplifiers in Analog Electronics
Abstract: Total 3566 individual simulation-outputs are reported in this work. The linear region and saturation region in each drain characteristic curve of nanoelectronic AlGaN/GaN/AlGaN double-heterojunction high electron mobility transistors (HEMTs) are clearly shown. In this work, we have obtained the maximum drain current of 389 mA using these HEMTs. The investigations on the dependence of drain current with respect to gate length in these double-heterojunction HEMTs is a novelty of this …
Published in Research & Reviews: A Journal of Embedded System & Applications · Vol. 5, Issue 2, 2017 · pp. 8–18 Read article
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Report on the Effects of Mole Fraction, Doping Concentration, Gate Length and Nano-Layer Thickness to Control the Device Engineering in the Nanoelectronic AlGaN/GaN HEMTs at 300 K to Enhance the Reputation of the NIT Arunachal Pradesh
Abstract: In this work, we report total 20748 individual simulation-outputs according to the performed simulation-studies on the Nanoelectronic AlGaN/GaN high electron mobility transistors (HEMTs). This series of simulation work has been performed using the SILVACO-ATLAS software tool. In this work, the drain characteristics is investigated with respect to the Aluminium mole fraction, doping concentration, drain voltage, gate voltage, gate length and thickness of the AlGaN nano-layer. The investigation on the effect …
Published in Nano Trends – A Journal of Nano Technology & Its Applications · Vol. 19, Issue 1, 2017 · pp. 15–47 Read article
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Drain Characteristics of GaN based Single-Heterojunction HEMTs with Variations in Gate Length and in Thickness of AlGaN Nano-Layer
Abstract: We have studied the drain characteristics in single-heterojunction AlGaN/GaN high electron mobility transistors (HEMTs) using the SILVACO-ATLAS software tool. The drain characteristics are studied with respect to five types of simulated structures. In each type of structures, the gate length and thickness of AlGaN nano-layer are different with respect to other types. Effects of drain voltage and gate voltage on drain current are studied by the simulated structures. Also, the …
Published in Journal of Nanoscience, NanoEngineering & Applications · Vol. 10, Issue 1, 2020 · pp. 1–10 Read article
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Effect of Aluminium Nitride Layer on the Electrical Performance of Microelectronic HEMTs
Abstract: AbstractIn this simulation work, a series of simulation outputs are reported related to the AlGaN/GaN single-heterojunction high electron mobility transistors (HEMTs). The effect of aluminium nitride nucleation layer on the drain characteristics is significant in single-heterojunction AlGaN/GaN HEMTs. The effects of drain voltage and gate voltage on the drain current are studied in the designed and simulated device structures. This simulation work may be a useful prediction to fabricate the …
Published in Journal of Microelectronics and Solid State Devices · Vol. 4, Issue 3, 2017 · pp. 9–12 Read article
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Simulation Studies on the Drain Characteristics of Microelectronic AlGaN/GaN HEMTs Corresponding to the 30 nm of AlGaN Nano-Layer
Abstract: AbstractIn this work, the simulation studies are performed on high electron mobility transistor (HEMT) structures using the SILVACO-ATLAS software tool. The drain characteristics of HEMT structures is investigated with respect to the Aluminium mole fraction, drain voltage, gate voltage, and gate length at 30 nm thickness of AlGaN nano-layer. The simulation studies on the effect of gate length to control the drain characteristics are a novelty of this work. The …
Published in Journal of Semiconductor Devices and Circuits · Vol. 4, Issue 1, 2017 · pp. 8–16 Read article
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Simulation Studies on the Electrical Characteristics of Novel Nanoelectronic AlGaN/GaN/AlGaN Double-Heterojunction HEMTs for Industrial Applications
Abstract: AbstractWe report the drain characteristics of AlGaN/GaN/AlGaN double heterojunction (DH) high electron mobility transistors (HEMTs) with the associated quantum well depths. The drain current is higher corresponding to the larger doping concentration of AlGaN nano-layer. The drain current is higher with the larger gate voltage at any particular drain voltage. The quantum well depth is significantly higher with the increasing doping concentration of AlGaN nano-layer. About the novelty of this …
Published in Journal of Semiconductor Devices and Circuits · Vol. 3, Issue 3, 2016 · pp. 6–18 Read article
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Effects of Drain Voltage, Gate Voltage and Aluminium Mole Fraction on Drain Current in GaN based Single-Heterojunction HEMTs designed with AlGaN Nano-Layers
Abstract: In this work, we have studied the effect of drain voltage on drain current in single-heterojunction AlGaN/GaN high electron mobility transistors (HEMTs). Also, we have studied the effect of gate voltage on drain current in same set of HEMTs. The effect of aluminium mole fraction on drain current is also studied in the HEMTs designed with AlGaN nano-layers. This work may be helpful to realize the characteristics of HEMT based …
Published in Nano Trends – A Journal of Nano Technology & Its Applications · Vol. 22, Issue 1, 2020 · pp. 6–14 Read article
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Electrical Characteristics of Microelectronic GaN based HEMTs at the AlGaN Thickness of 10 nm
Abstract: Electrical Characteristics of Microelectronic GaN based HEMTs at the AlGaN Thickness of 10 nmIn this work, total 3655 individual simulation-outputs are reported. Total 25 individual microelectronic single-heterojunction AlGaN/GaN high electron mobility transistor (HEMT) structures are designed and simulated in this work using the SILVACO-ATLAS software tool. In this work, drain voltage and gate voltage are electrical parameters. Aluminium mole fraction and gate length are structural parameters. The effect of drain …
Published in Research & Reviews : Journal of Physics · Vol. 7, Issue 1, 2018 · pp. 12–23 Read article
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Studies on the DC Characteristics of Microelectronic AlGaN/GaN HEMTs
Abstract: In this work, total 3752 individual simulation-outputs are reported. Total 25 individual microelectronic single-heterojunction AlGaN/GaN high electron mobility transistor (HEMT) structures are designed and simulated in this work using the SILVACO-ATLAS software tool. In this work, drain voltage and gate voltage are electrical parameters to determine the DC characteristics of HEMTs. Aluminium mole fraction is the structural parameter in this purpose. The effects of drain voltage and gate voltage on …
Published in Research & Reviews : Journal of Physics · Vol. 7, Issue 2, 2018 · pp. 32–43 Read article
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Studies on the DC Characteristics of Nanoelectronic Single-Heterojunction GaN based HEMTs with AlGaN Layer of 22 nm
Abstract: AbstractIn this work, total 2367 individual simulation-outputs are reported. We have studied the drain characteristics in AlGaN/GaN high electron mobility transistors (HEMTs) having the AlGaN thickness of 22 nm. According to this study, the drain current increases with drain voltage. Also, the drain current increases with gate voltage. The drain current is observed as higher at larger aluminium mole fraction. Also, the drain current is higher at larger doping concentration. …
Published in Journal of Microwave Engineering and Technologies · Vol. 5, Issue 1, 2018 · pp. 1–12 Read article
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Gallium Nitride based HEMTs in Nano-Scale Regime
Abstract: AbstractIn this work, a maximum drain current of 557 mA is achieved by the simulated structures of double-heterojunction HEMTs using the SILVACO-ATLAS software tool. The drain current is found to be higher at shorter gate length. The drain current is observed as higher at larger aluminium mole fraction. The drain current is also higher at larger thickness of AlGaN barrier layer. Again, the drain current is higher at larger doping …
Published in Journal of Microelectronics and Solid State Devices · Vol. 5, Issue 3, 2018 · pp. 11–21 Read article
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Novel Characteristics of GaN based Nanoelectronic Double-Heterojunction HEMTs to Establish a Solid-State-Electronics Laboratory
Abstract: The drain characteristics are investigated with respect to electrical variables (drain voltage, gate voltage) and structural parameters of high electron mobility transistors (HEMTs). Total 10526 individual simulation-outputs are reported in this work. The maximum drain current of 553 mA is achieved by the simulated structures of double-heterojunction HEMTs using the SILVACO-ATLAS software tool. The drain current is higher at shorter gate length. The drain current is higher at larger aluminium …
Published in Journal of Semiconductor Devices and Circuits · Vol. 4, Issue 3, 2017 · pp. 11–20 Read article
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Variations of Source Current in the Double-Heterojunction HEMTs
Abstract: AbstractIn this report, we have studied the variations in source current with respect to drain voltage corresponding to the double heterojunction (DH) high electron mobility transistors (HEMTs). Also, the effects of gate voltage and aluminium mole fractions on source current are studied. In this work, the highest source current achieved is 3.3 mA. This work may be useful to design many nanoelectronic HEMTs.Keywords: Source current, drain voltage, gate voltage, mole …
Published in Journal of Semiconductor Devices and Circuits · Vol. 3, Issue 3, 2016 · pp. 19–24 Read article
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Fundamental Concepts and Applications of High Electron Mobility Transistors (HEMTs): A Qualitative Review
Abstract: A brief qualitative review of the modulation doped field effect transistors (MODFETs), also known as High Electron Mobility Transistors (HEMTs) is provided here. The prominent features of this review include detailed discussion on the role of various layers and comparison between various HEMTs structures. Emphasis has been given to offer a complete overview of the various aspects of HEMT devices, from fabrication to applications, in a synergetic manner.
Published in Journal of Semiconductor Devices and Circuits · Vol. 2, Issue 1, 2015 · pp. 31–47 Read article
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Effect of Aluminium Mole Fraction on the AlGaN/GaN HEMTs with 10 nm AlGaN Nano-Layer
Abstract: We report the effect of aluminium mole fraction on drain current in AlGaN/GaN high electron mobility transistors (HEMTs). The drain current increases with the drain voltage. Also, the effect of gate voltage on drain current as well as the effect of drain voltage on source current is studied. The drain current is invariant and nearly 0 mA corresponding to the aluminium mole fractions of 0.10, 0.15, 0.20, and 0.25 related …
Published in Journal of Microelectronics and Solid State Devices · Vol. 3, Issue 3, 2016 · pp. 15–21 Read article
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Electrical Characteristics of AlGaN/GaN/AlGaN HEMTs
Abstract: AbstractA maximum drain current of 556 mA is achieved by the simulated structures of double-heterojunction AlGaN/GaN/AlGaN high electron mobility transistors (HEMTs) using the SILVACO-ATLAS software tool in this work. The drain current is observed as higher at shorter gate length. The drain current is found as higher at larger aluminium mole fraction. Also, the drain current is found as higher at larger thickness of AlGaN barrier layer. The drain current …
Published in Journal of Semiconductor Devices and Circuits · Vol. 5, Issue 3, 2018 · pp. 7–17 Read article
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Effect of Aluminium nitride Nucleation-layer on the Drain Characteristics of Nanoelectronic AlGaN/GaN Single-Heterojunction HEMTs
Abstract: The simulation studies on the effect of aluminium nitride (AlN) nucleation layer in nanoelectronic single-heterojunction AlGaN/GaN high electron mobility transistors (HEMTs) is the novelty of this work. The variations in drain current with drain voltage are studied corresponding to different gate voltages. Also, the variations in drain current with gate voltage are studied corresponding to any considered drain voltage. This simulation work may be an useful prediction for the fabrication …
Published in Journal of Nuclear Engineering & Technology · Vol. 7, Issue 1, 2017 · pp. 1–3 Read article
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Evolutionary to Revolutionary HEMT Structures
Abstract: In addition to the material engineering in HEMT, structural engineering has also lead to various new devices with improved performance like increase current, gm, linearity, breakdown etc. Some of these prominent structures have been discussed in the following review
Published in Journal of Semiconductor Devices and Circuits · Vol. 2, Issue 2, 2015 · pp. 9–17 Read article
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DC and RF Analysis on Specific Quantum-Well Heterostructures
Abstract: Polarization-graded AlGaN back-barrier nano-layer is introduced in high electron mobility transistor (HEMT) structure to have an improved drain current characteristics and better radio-frequency performance, using two-dimensional drift-diffusion simulation by SILVACO-ATLAS physical simulator. In this work, the AlGaN/AlN/GaN/AlGaN/GaN double heterojunction HEMT structure is optimised with graded back barrier layer to study the DC and RF performances. Investigation of this structure with graded back barrier layer is the novelty of this work. …
Published in Journal of Semiconductor Devices and Circuits · Vol. 9, Issue 1, 2022 · pp. 1–13 Read article